CY62148V Search Results

Contextual Info: CY62148V MoBL 512Kx 8 MoBL Static RAM Features • Low voltage range: — 1 .8 V - 3 . • • • • • • Ultra low active power Low standby power _ _ Easy memory expansion with CS- /CS2 and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

CY62148VLL-70ZI

Abstract: CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI
Contextual Info: MoBL ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A 0 through A18).

Contextual Info: V CYPRESS ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM W riting to the device is accom p lish ed by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. Data on th e eight I/O pins (l/O 0 th ro u g h l/ 0 7) is then w ritte n into th e location s p e ci­

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-55636 Spec Title: CY62148VN MOBL R , 4 MBIT (512K X 8) STATIC RAM Sunset Owner: Ramesh Raghavan (RAME) Replaced by: None CY62148VN MoBL 4 Mbit (512K x 8) Static RAM Features applications such as cellular telephones. The device also has an

Contextual Info: fax id: 1093 PRELIMINARY Features 512Kx 8 Static RAM CY62148V an au to m a tic pow er-dow n feature tha t reduces pow er co n ­ sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is acco m plishe d by taking chip enable

62148

Abstract: qB17 CF S34
Contextual Info: fax id: 1093 CY62148V 5 1 2 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 2.7V -3.6V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

Contextual Info: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE

CY62148CV30

Abstract: CY62148V CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32
Contextual Info: CY62148V MoBL 4M 512K x 8 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra low active power Low standby power TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a 32 pin TSOPII and a 32-pin SOIC

E825

Abstract: CY62148V ZS32
Contextual Info: fax id: 1093 O YPH ESS W CY62148V PRELIMINARY 512Kx 8 Static RAM Features an au tom atic pow er-dow n feature tha t reduces pow er co n ­ sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is accom plished by taking chip enable

CY62148V

Contextual Info: fax id: 1093 CY62148V PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW max.

AN1064

Contextual Info: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE

BA37

Abstract: CY62148V CY62148VLL-70BAI CY62148VLL-70SI CY62148VLL-70ZI ZS32
Contextual Info: MoBL CY62148V MoBL 512K x 8 MoBL Static RAM Features The device can be put into standby mode when deselected CE HIGH . • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected

SOIC-36

Abstract: 40 pin J004 BA37 CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI ZS32 CY62148VL-70BAI
Contextual Info: V CYPRESS ADVANCED INFORMATION Features CY62148V MoBL 512K x 8 MoBL Static RAM W riting to the device is accom p lish ed by takin g C hip Enable CE and W rite Enable (WE) inputs LOW. Data on th e eight I/O pins (l/O 0 thro u g h l/ 0 7) is then w ritte n into the location sp e ci­

CY62148VLL-70ZI

Abstract: CY62148VLL-70SI ZS32 BA37 CY62148V CY62148VLL-70BAI
Contextual Info: MoBL CY62148V MoBL 512K x 8 MoBL Static RAM The device can be put into standby mode when deselected CE HIGH . Features • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: Rev: 102108 DS33M33 Demo Kit General Description The DS33M33 demo kit DK is an easy-to-use evaluation board for the DS33M33 and the DS33M33 Ethernet-over-SONET/SDH devices. The demo kit contains an option for either T3 or E3. The T3E3 links are complete with line interface, transformers, and

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

TSOP 48 thermal resistance

Abstract: 130C 8361H CY62148 CY62148V JESD22 tsop package MSL
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 000805 VERSION 1.0 October 2000 32 Lead 400 mil TSOP type ll package and Moisture Level 3 Chip Pac Hyundai Korea CYPRESS TECHNICAL CONTACT FOR QUALITFICATION DATA: Ed Russell Reliability Director (408) 432–7069

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16