BUZ32 Search Results

Contextual Info: SILICONIX INC lflE D • A5 S4 7 3 5 D014bl3S Q ■ BUZ32 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW O PRODUCT SUMMARY Id . A V(BRJDSS 200 0.40 9.5 i 1 GATE 2 DRAIN (Connected to TAB) 3 SO U R C E 23 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

BUZ32

Abstract: T-39
Contextual Info: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:

BUZ32

Abstract: IEC61249-2-21
Contextual Info: BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free BUZ32 H3045A Rev. 2.2 PG-TO263-3 Yes 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A

buz32

Contextual Info: 7 SGS-THOMSON MÊliÂILlIfgïlMDMÊS BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on •d BUZ32 200 V 0.4 Q 9.5 A • 200 VO LTS FOR TELECO M S APPLICATIO NS • HIGH CURRENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE

Contextual Info: T'ÎS'ÎBB? □GS'ibTÖ 4 • SGS-THOMSON BUZ32 IM CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR 3GE » N S G S-THOMSON TYPE V qss BUZ32 200 V Id ^DS on 0.4 a 9.5 A • 200 VOLTS FOR TELECO M S APPLICATIONS • HIGH CURR ENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAM PED INDUCTIVE

Contextual Info: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ32

Abstract: TB334
Contextual Info: BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ32) field effect transistor designed for applications such as

Contextual Info: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ32

Contextual Info: rZ7 ^ 7# » SGS-THOMSON BUZ32 CHIP M M [L i(g r a M © S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE TH ICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: BUZ32 Semiconductor Data Sheet October 1998 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This is an N -C h a n n e l e n h a n c e m e n t m ode silicon g ate pow er field effect transistor d es ig n e d for applications such as File Number 2416.1 Features

Contextual Info: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

L3045A

Abstract: transistor buz 10 BUZ32
Contextual Info: BUZ 32 L3045A . Pb-free lead plating; RoHS compliant Pb-free Yes Rev. 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ 32 L3045A Rev 2.1 2009-03-10 BUZ32 L3045A

buz32

Contextual Info: S G S -T H O M S O N w rc æ rz m s m BUZ32 e œ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS I TYPE •B U Z 3 2 . . . V dss R DS on| 200 V 0 . 4 £2 I Id 11 A AVALANCHE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

BUZ171

Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

BUZ171

Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
Contextual Info: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10

IRF740 smd

Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36