BPW17 Search Results

8239

Abstract: BPW17 BPW17N CQY37N
Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW17

Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 0O TO TpaH3M CTO pbl Kofl: flrrnHaBoriHbi b TO H Ke MaKC. electronics 495 739-09-95, 644-41-29 BPW17 yron o63opa UCE0 MyBCTBHTenbHOCTb (UCE= 5B , X = 950 h m ) TnnrmH3bi 1 m A @ 1 m B t/cm 2 6ecqB eTH aa H yB C T B H T. X max

BPW17

Abstract: CQY37 BPW17N
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

Contextual Info: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis­ tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW17N

Contextual Info: BPW17N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12 ° lens. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW17N

Abstract: BPW17 CQY37N
Contextual Info: BPW17N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

BPW17N

Abstract: CQY37N BPW17
Contextual Info: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical

BPW17N

Abstract: CQY37N
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW17N application note

Abstract: ic 8243 BPW17N
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

TFK 148

Abstract: TFK BPW 20 TFK 149 bpw 148 7314 bpw 50 montage BPW 50 BPW17 BPW16 TFK bpw
Contextual Info: BPW 16 • BPW17 Silizium-NPN-Epitaxial-Planar-Fototransistoren Silicon NPN Epitaxial Planar Phototransistors Anwendung: Empfänger in elektronischen Steuer- und Regeleinrichtungen Application: D etector in electronic control and drive circuits Features: Besondere Merkmale:

npn phototransistor

Abstract: BPW17N BPW17 BPW17N application note 8239
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW17

Abstract: ic 8243 BPW17N CQY37N infrared 950nm
Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

CQY 26

Abstract: BPW17N diode 8308
Contextual Info: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

12109

Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage

BPW85C

Contextual Info: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package

Contextual Info: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

packaging

Contextual Info: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455