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    BFY51 Price and Stock

    Continental Device India Ltd BFY51

    Transistor: NPN; bipolar; 30V; 1A; 0.8/5W; TO39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BFY51 1,956 1
    • 1 $0.885
    • 10 $0.62
    • 100 $0.335
    • 1000 $0.296
    • 10000 $0.296
    		Buy Now

    BFY51 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY51 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY51 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY51 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original PDF
    BFY51 STMicroelectronics MEDIUM POWER AMPLIFIER Original PDF
    BFY51 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BFY51 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BFY51 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    BFY51 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    BFY51 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BFY51 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFY51 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFY51 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BFY51 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BFY51 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFY51 Micro Electronics Semiconductor Devices Scan PDF
    BFY51 Motorola Motorola Transistor Datasheets Scan PDF
    BFY51 Motorola The European Selection Data Book 1976 Scan PDF
    BFY51 Motorola European Master Selection Guide 1986 Scan PDF
    BFY51 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFY51 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BFY51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFY51

    Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors


    Original     		PDF M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips

    BFY52

    Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
    Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701

    BFY51

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BFY51 • V BR CEO = 30V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO


    Original     		PDF BFY51 O-205AD) BFY51

    Untitled

    Abstract: No abstract text available
    Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY51 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY51 O205AD) 17-Jul-02

    BFY51

    Abstract: BFY50 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 BFY51 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52

    2N3055 TO220

    Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor
    Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100


    Original     		PDF BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 BC178 BC559 2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: BFY51 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BFY51 Freq50M

    DATASHEET BFY51

    Abstract: BFY51
    Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BFY51 O205AD) 1-Aug-02 DATASHEET BFY51 BFY51

    BFY50

    Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
    Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.


    OCR Scan     		PDF BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


    OCR Scan     		PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    BFY52

    Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips
    Text: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.


    OCR Scan     		PDF BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips

    BFY50-BFY51

    Abstract: No abstract text available
    Text: /IT ^7# S C S -IH O M S O N RjincœiiLiCTœffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.


    OCR Scan     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50

    BF177

    Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829

    Transistor BC177

    Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177

    Bfy51

    Abstract: No abstract text available
    Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter


    OCR Scan     		PDF bbS3T31 BFY50 BFY51 BFY52 Bfy51

    BC337C

    Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC337C bc327c BC338C bc337b 2N1131 2N1132 2N4037

    BC238B

    Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC238B BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N4037

    BFY51

    Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
    Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100

    BC142 equivalent

    Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BC142 equivalent BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260

    BC107

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    N2222

    Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


    OCR Scan     		PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 BFS36 2N930 BFS37 2N2605 BFS36A N2222 2n222 2n222a ZTX326 BFY50 BFY51