BAW27 Search Results
BAW27 Price and Stock
Vishay Semiconductors BAW27-TAPDIODE GEN PURP 60V 600MA DO35 |
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BAW27-TAP | Cut Tape | 39,822 | 1 |
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Vishay Semiconductors BAW27-TRDIODE GEN PURP 60V 600MA DO35 |
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BAW27-TR | Cut Tape | 39,507 | 1 |
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Vishay Intertechnologies BAW27-TAPSWITCHING DIODE GENPURP DO35 - Ammo Pack (Alt: BAW27-TAP) |
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BAW27-TAP | Ammo Pack | 7 Weeks | 50,000 |
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BAW27-TAP | 8,110 |
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BAW27-TAP | 24,739 | 223 |
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BAW27-TAP | Cut Strips | 24,739 | 7 Weeks | 1 |
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BAW27-TAP | Cut Tape | 50,000 |
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BAW27-TAP | Ammo Pack | 50,000 |
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BAW27-TAP | 13,438 |
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BAW27-TAP | 9 Weeks | 50,000 |
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BAW27-TAP | 8,227 | 1 |
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Vishay Intertechnologies BAW27-TRSWITCHING DIODE GENPURP DO35 - Tape and Reel (Alt: BAW27-TR) |
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BAW27-TR | Reel | 7 Weeks | 50,000 |
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BAW27-TR | 25,903 |
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BAW27-TR | Reel | 50,000 |
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BAW27-TR | Reel | 50,000 |
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Telefunken Semiconductor GmbH & Co Kg BAW27-TAP |
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BAW27-TAP | 10,000 |
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BAW27-TAP | 8,000 |
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BAW27 Datasheets (19)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAW27 | Taitron Components | Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Vishay Intertechnology | Silicon Epitaxial Planar Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Vishay Semiconductors | Switching Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 |
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Computer Diode Switching | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Cross Reference Datasheet | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Unknown | Diode, Transistor, Thyristor Datasheets and more | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Philips Components | Philips Data Book Scan | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Telefunken Electronic | Diodes 1977 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Telefunken Electronic | Silicon Epitaxial Planar Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27 | Telefunken Electronic | Silicon Epitaxial Planar Diodes in a DO-35 Package | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAW27 | Vishay Telefunken | Silicon Epitaxial Planar Diodes | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27-TAP |
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DIODE SWITCHING 75V 0.3A 2DO-35 AMMO | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27-TAP | Vishay Intertechnology | Switching Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27-TR |
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DIODE SWITCHING 75V 0.3A 2DO-35 T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW27-TR | Vishay Intertechnology | Switching Diode | Original |
BAW27 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BAW76Contextual Info: COMPUTER DIODE BAW24-BAW27 BAW75-BAW76 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated • DO-35 This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS. AT 25°C |
OCR Scan |
BAW24-BAW27 BAW75-BAW76 DO-35 BAW24 BAW25 BAW26 BAW27 BAW75 BAW76 300mA BAW76 | |
BAW27Contextual Info: BAW27 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction |
Original |
BAW27 BAW27 D-74025 14-Feb-01 | |
BAW27Contextual Info: BAW27 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings |
Original |
BAW27 TLx25 D-74025 BAW27 | |
SB-V-3906Contextual Info: BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance |
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BAW27 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 50K/box BAW27 BAW27-TR BAW27-TAP SB-V-3906 | |
BAW27Contextual Info: BAW27 Vishay Telefunken Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings Tj = 25_C |
Original |
BAW27 25design D-74025 01-Apr-99 BAW27 | |
Contextual Info: BAW27 Vishay Semiconductors Small Signal Switching Diode Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop High forward current capability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAW27 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 BAW27 BAW27-TR BAW27-TAP | |
Contextual Info: BAW27 Vishay Semiconductors Small Signal Switching Diode Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop High forward current capability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
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BAW27 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 BAW27 BAW27-TR BAW27-TAP | |
Contextual Info: BAW27 VISHAY Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications |
Original |
BAW27 DO-35 BAW27 BAW27-TR BAW27-TAP 08-Apr-05 | |
BAW27Contextual Info: BAW27 Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage |
Original |
BAW27 D-74025 12-Dec-94 BAW27 | |
BAW27
Abstract: BAW27-TAP BAW27-TR
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BAW27 2002/95/EC 2002/96/EC DO-35 BAW27-TR BAW27-TAP 08-Apr-05 BAW27 BAW27-TAP | |
Contextual Info: ¥i mm? ▼ BAW27 _ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications |
OCR Scan |
BAW27 200mA 400mA 100mA, -Apr-99 | |
N4448Contextual Info: VISHAY _ ▼ Vishay Telefu nken Alphanumeric Index 1N4148.1 N4448 115 BAS19-BAS21 1N4150 118 BAS281 .BAS283 163 BAW27 187 BAW56 189 BAS285 76 79 1N4151 1N4154 120 BAW75 192 123 BAS286 82 BAW76 194 1N4678.1N4717 243 BAS33.BAS34 166 BAY135 196 |
OCR Scan |
1N4148 N4448 1N4150 1N4151 1N4154 1N4678. 1N4717 1N4728A. N4761A 1N5221B. | |
BAW27
Abstract: VR60
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BAW27 BAW27 D-74025 14-Feb-01 VR60 | |
BAW27
Abstract: BAW27-TAP BAW27-TR DO35
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BAW27 2002/95/EC 2002/96/EC TR/10 TAP/10 BAW27-TR BAW27-TAP 18-Jul-08 BAW27 BAW27-TAP DO35 | |
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BAW27
Abstract: BAW27-TAP BAW27-TR DO35
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BAW27 2002/95/EC 2002/96/EC TR/10 TAP/10 BAW27-TR BAW27-TAP 08-Apr-05 BAW27 BAW27-TAP DO35 | |
Contextual Info: BAW27 Vishay Semiconductors Small Signal Switching Diode Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop High forward current capability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC |
Original |
BAW27 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 BAW27 BAW27-TR BAW27-TAP | |
LF400Contextual Info: Tem ic BAW27 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings |
OCR Scan |
BAW27 200mA 400mA 12-Dec-94 LF400 | |
Contextual Info: Tem ic BAW27 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features • L ow forward voltage drop • High forward current capability Applications High speed switch and general purpose computer and industrial applications 94 4167 Absolute Maximum Ratings |
OCR Scan |
BAW27 | |
l45cContextual Info: BAW27 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in com puter and industrial applications Absolute Maximum Ratings Tj = 25°C |
OCR Scan |
BAW27 200mA 400mA 100mA, 01-Apr-99 l45c | |
BAW27
Abstract: BAW27-TAP BAW27-TR
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BAW27 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 BAW27-TR BAW27-TAP BAW27 BAW27-TAP | |
Contextual Info: BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance please see |
Original |
BAW27 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K BAW27-electronic 2002/95/EC. | |
Contextual Info: BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance |
Original |
BAW27 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K BAW27-TR BAW27-TAP | |
Contextual Info: BAW27 VISHAY Vishay Semiconductors Small Signal Switching Diode Features • Silicon Epitaxial Planar Diode • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications |
Original |
BAW27 DO-35 BAW27 BAW27-TR BAW27-TAP D-74025 31-Mar-04 | |
SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
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represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 |