AM99CL Search Results

CMOS 16-Bit Priority Encoder

Abstract: Priority Encoder CAM
Contextual Info: Am99ClO 256 x 48 Content Addressable Memory CAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS Fast-com pare time — 50 ns data to match output M askable-bits and m askable-words W ord-parallel search Multiple-match capabilities • • • • On-chip address decoder

UE 40 F 6470

Abstract: pid u 13t
Contextual Info: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention

Amd 5000 pin diagram

Contextual Info: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention

AM99C68-45

Abstract: 99C68
Contextual Info: Am99C68/Am99CL68 DISTINCTIVE CHARACTERISTICS High speed — access tim es as fast as 45 ns Fully static storage and interface circuitry No clocks or tim ing signals required Autom atic power down when deselected Low power dissipation: - Active: 660 mW Max.

AM99C19

Contextual Info: Am99Cl9 1 0 2 4 x 9 First-In/First-Out FIFO DISTINCTIVE CH A RACTERISTIC S • First-In/First-Out dual-port memory • 1 0 2 4 x 9 organization • Fast cycle time - 45 ns typical • Fast throughput time > 20MHz • Expandable by both word depth and/or bit width

Contextual Info: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.

99C68-35

Contextual Info: ADV MICRO {MEMORY} D Ê | 025752Û OOESbOb H n Am99C68/Am99CL68 4096 x 4 CMOS Static R /W Random-Access Memory 0 2 5 7 5 2 8 ADV MICRO <MEMORY 89D 25606 D T-46-23-08 > 3 DISTINCTIVE CHARACTERISTICS - Standby: High speed — access times as fast as 35 ns Fully static storage and interface circuitry

7207 irc

Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active

99C68

Abstract: 99C68-35 am99cl68 AM99C68 AM99C68-70 AM99C68-45 AM99CL68-45
Contextual Info: Am99C68/Am99CL68 DISTINCTIVE CHARACTERISTICS High speed — access tim es as fast as 45 ns Fully static storage and interface circuitry No clocks or tim ing signals required Autom atic power down when deselected Low power dissipation: - Active: 660 mW Max.

99C88

Abstract: CI 8810 8815A
Contextual Info: Am99C88/Am99CL88 8 K x 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access tim es 7 0 /1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max.

Contextual Info: Am99C68/Am99CL68 4096 x 4 CMOS Static R/W Random-Access Memory • • • • • - Standby: High speed — access times as fast as 45 ns Fully static storage and interface circuitry No clocks or timing signals required Automatic power down when deselected

Amd 5000 pin diagram

Abstract: ISB12
Contextual Info: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention

PD3024

Abstract: pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability 22-pin 0.300-inch DIP <Am99C164

Contextual Info: Am99Cl 6 4 /Am99Cl 65 16,384x4 STATIC R /W RANDOM-ACCESS MEMORY ADVANCE INFORMATION • • • • Fast access time - Am99C164 - 35/45/5 5/70 ns maximum Am99C165 - 35 /45/5 5/70 ns maximum 1 6 K x4 organization Output Enable 5 control to alleviate bus contention

Am99C68

Contextual Info: Am99C68/Am99CL68 4096 x 4 CMOS Static R /W Random-Access Memory • • • • • High speed — access times as fast as 45 ns Fully static storage and interface circuitry No clocks or timing signals required Automatic power down when deselected Low power dissipation:

7207 irc

Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Contextual Info: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active

pid u 13t

Abstract: AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST
Contextual Info: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIM IN ARY D IS T IN C T IV E C H A R A C T E R IS T IC S Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability

KS000010

Contextual Info: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ Am99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process

99C641

Contextual Info: Am99C641/Am99CL641 LÌ 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • H igh-perform ance C M O S circuit High Speed - a ccess tim es a s Single 5-V ± 1 0 % pow er-supply Low pow e r - 550 m W active 110 m W T T L - Standby

content addressable memory match line segment

Contextual Info: A m 9 9 C 1 Advanced Micro Devices A 256 x 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS • 100 nsec and 70 nsec cycle time devices available - Optimized for Address Decoding in Local Area Networks LAN and bridging applications ■ Flexible operation and diagnostics capability

wf vqc 10d

Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Contextual Info: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction

k45l

Abstract: HM6168HP-55 L69A hitachi 6168 hm6168hp-45 51C68-30 51C68-35 51C68-35L HMB2 M6168HLP-45
Contextual Info: - 1 6 K X m a £ °C> TAAC max (ns TCAC max (ns) TO E max (ns) -Í •/ CMOS * y y S t a t i c RAM ( 4 0 9 6 x 4 ) 2 0 P I N 6 1 6 8 À m tî. n TO H t in (ns) TOD max (ns) TWP min (ns) TDS min (ns) TD H min (ns) TWD min (ns) TWR max (ns) VDD o r VCC (V)

CDM6264-1

Abstract: BR6264 CDM6264 com6264 AKM6264ALP-12L intel 6264 AKM6264ALP-12 AKM6264ALP-15 AKMB264ALP-15L AKMB264AP-12
Contextual Info: - 84 6 4 K -i X fäfSEfcH m s tt * CC CMOS -, TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) fTOD max (ns) > r T*P min (ns) S t a t i c & R A M ( 8 19 2 X 8 ) it TDS min (ns) TDH min (ns) TWD min (ns) Tvn max (ns) V D D or V C C (V) 2 8 P I N I DD

pid u 13t

Contextual Info: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS