APT6010JLL Search Results
APT6010JLL Price and Stock
Microchip Technology Inc APT6010JLLMOSFET N-CH 600V 47A ISOTOP |
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APT6010JLL Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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APT6010JLL | Advanced Power Technology | POWER MOS 7 600V 47A 0.100 Ohm | Original | |||
APT6010JLL | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | |||
APT6010JLL |
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Power MOS 7 Low Loss MOSFET | Original |
APT6010JLL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT6010JLLContextual Info: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
Original |
APT6010JLL OT-227 APT6010JLL | |
Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
Original |
APT6010JLL | |
Contextual Info: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
Original |
APT6010JLL OT-227 | |
Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
Original |
APT6010JLL OT-227 | |
APT6010JLLContextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT6010JLL OT-227 APT6010JLL | |
Diode 188Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT6010JLL OT-227 Diode 188 | |
Contextual Info: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT6010JLL | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
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sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
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mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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