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    APT6010JLL Price and Stock

    Microchip Technology Inc APT6010JLL

    MOSFET N-CH 600V 47A ISOTOP
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    Avnet Americas APT6010JLL Tube 26 Weeks 20
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    Mouser Electronics APT6010JLL
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    Newark APT6010JLL Bulk 20
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    Future Electronics APT6010JLL 20
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    Microchip Technology Inc APT6010JLL Tube 26 Weeks
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    Onlinecomponents.com APT6010JLL
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    TME APT6010JLL 1
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    NAC APT6010JLL Tube 9
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    Richardson RFPD APT6010JLL 24 1
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    Master Electronics APT6010JLL
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    APT6010JLL Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT6010JLL Advanced Power Technology POWER MOS 7 600V 47A 0.100 Ohm Original PDF
    APT6010JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6010JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF

    APT6010JLL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT6010JLL

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT6010JLL OT-227 APT6010JLL

    Untitled

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT6010JLL

    Untitled

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT6010JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT6010JLL OT-227

    APT6010JLL

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original
    PDF APT6010JLL OT-227 APT6010JLL

    Diode 188

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original
    PDF APT6010JLL OT-227 Diode 188

    Untitled

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT6010JLL

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF