APT5024BVR Search Results
APT5024BVR Price and Stock
Microchip Technology Inc APT5024BVRGMosfet Mos5 500 V 24 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT5024BVRG |
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APT5024BVRG | Bulk | 30 |
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APT5024BVRG | 1 |
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APT5024BVRG | 31 |
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Microchip Technology Inc APT5024BVR22 A, 500 V, 0.24 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT5024BVR | 17 |
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APT5024BVR Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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APT5024BVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | |||
APT5024BVR | Unknown | Power MOS V, 500V 22A, MOS-FET N-Channel enhanced | Original |
APT5024BVR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT5024BVR O-247 O-247AD | |
c2802
Abstract: AS1210
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APT5024BVR O-247 00A/fis) O-247AD c2802 AS1210 | |
88 diode
Abstract: APT5024BVR
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APT5024BVR O-247 O-247 88 diode APT5024BVR | |
APT5024BVR
Abstract: APT5024SVR
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APT5024BVR APT5024SVR O-247 O-247 APT5024BVR APT5024SVR | |
Contextual Info: APT5024BVR APT5024SVR 22A 0.240Ω 500V POWER MOS V BVR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024BVR APT5024SVR O-247 O-247 APT5024BVR | |
Contextual Info: APT5024BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 0.240q 22A POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024BVR O-247 | |
Contextual Info: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024BVFR O-247 O-247 APT5024BVR | |
BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
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AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR | |
nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
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APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
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Contextual Info: • R A dvanced W .\A APT5024BVFR pow er Te c h n o l o g y “ soov POWER MOS V‘ 0.240q 22A FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024BVFR O-247 APT5024BVR | |
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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660 tg diodeContextual Info: APT5024BVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 500V 22A 0.2400 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024BVFR O-247 APT5024BVR 660 tg diode |