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    APT200GT60JR Search Results

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    APT200GT60JR Price and Stock

    Microchip Technology Inc APT200GT60JR

    IGBT MOD 600V 195A 500W SOT227
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    TME APT200GT60JR 1
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    APT200GT60JR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT200GT60JR
    Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDL
    Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF
    APT200GT60JRDQ4
    Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 100; Original PDF

    APT200GT60JR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JR 50KHz E145592 PDF

    Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDL 50KHz PDF

    Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDL 50KHz PDF

    Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDQ4 50KHz E145592 PDF

    APT200GT60JRDL

    Contextual Info: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDL 50KHz APT200GT60JRDL PDF

    Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDQ4 50KHz E145592 PDF

    Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JR 50KHz E145592 OT-227 PDF

    APT100DQ60

    Abstract: APT200GT60JR
    Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JR 50KHz E145592 APT100DQ60 APT200GT60JR PDF

    APT100DQ60

    Abstract: APT200GT60JRDQ4
    Contextual Info: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JRDQ4 50KHz E145592 APT100DQ60 APT200GT60JRDQ4 PDF

    33182

    Abstract: APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d
    Contextual Info: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    APT200GT60JR 50KHz E145592 33182 APT100DQ60 IGBT GS Thunderbolt IGBT APT200GT60JR APT100 apt100d PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


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    des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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