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    APT100 Price and Stock

    Microchip Technology Inc APT100S20BG

    DIODE SCHOTTKY 200V 120A TO247
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    DigiKey APT100S20BG Tube 967 1
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    Mouser Electronics APT100S20BG 1,949
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    Verical APT100S20BG 11 7
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    Newark APT100S20BG Bulk 100
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    Quest Components APT100S20BG 4
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    TME APT100S20BG 11 1
    • 1 $10.6
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    NAC APT100S20BG Tube 67
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    Richardson RFPD APT100S20BG 100
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    Microchip Technology Inc APT10090BLLG

    MOSFET N-CH 1000V 12A TO247
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    DigiKey APT10090BLLG Tube 301 1
    • 1 $16.82
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    Mouser Electronics APT10090BLLG 64
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    Verical APT10090BLLG 15 1
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    Arrow Electronics APT10090BLLG 15 26 Weeks 1
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    Microchip Technology Inc APT100GT120JU2

    IGBT MOD 1200V 140A 480W SOT227
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    DigiKey APT100GT120JU2 Bulk 184 1
    • 1 $40.24
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    Onlinecomponents.com APT100GT120JU2
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    Microchip Technology Inc APT10021JFLL

    MOSFET N-CH 1000V 37A ISOTOP
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    DigiKey APT10021JFLL Tube 60 1
    • 1 $101.2
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    TME APT10021JFLL 1
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    Vyrian APT10021JFLL 60
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    Microchip Technology Inc APT100D60B2G

    DIODE GEN PURP 600V 100A TO247
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    DigiKey APT100D60B2G Tube 46 1
    • 1 $7.45
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    Avnet Americas APT100D60B2G Tube 22 Weeks 90
    • 1 $7.45
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    TME APT100D60B2G 1
    • 1 $10.8
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    • 100 $7.71
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    Find more APT100 price and stock on Findchips.com

    APT100 Datasheets (270)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1001 Advanced Power Technology Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Original PDF
    APT1001R1AVR Advanced Power Technology POWER MOS V 1000V 9A 1.100 Ohm Original PDF
    APT1001R1AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R1BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD Original PDF
    APT1001R1BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT1001R1HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1HVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1HVR Unknown High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced Original PDF
    APT1001R1SN Advanced Power Technology Power MOS IV Scan PDF
    APT1001R3BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R3HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R6BFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT1001R6BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1001R6BFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 8A TO-247 Original PDF
    APT1001R6BLL Advanced Power Technology POWER MOS 7 MOSFET Original PDF
    APT1001R6BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R6SFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    ...

    APT100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10035LLL

    Abstract: APT100GT120JRDL
    Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JRDL E145592 APT10035LLL

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10026JFLL OT-227 APT10026JFLL

    APT10086BVFR

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10086BVFR O-247 O-247 APT10086BVFR

    APT100DQ60

    Abstract: APT100GT60LRG APT100GT60LR
    Text: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT60B2R APT100GT60LR 50KHz O-247 APT100DQ60 APT100GT60LRG

    APT10086BLC

    Abstract: APT10086SLC
    Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT10086BLC APT10086SLC O-247 O-247 APT10086 APT10086BLC APT10086SLC

    APT1004RKN

    Abstract: APT1004R2KN 1004r
    Text: D TO-220 G APT1004RKN APT1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS APT1004R2KN APT1004RKN


    Original     		PDF O-220 APT1004RKN APT1004R2KN O-220AB APT1004RKN APT1004R2KN 1004r

    APT100GF60LR

    Abstract: IGBT 100A
    Text: APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 600V Fast IGBT 100A APT100GF60B2R T-Max B2R The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.


    Original     		PDF APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 20KHz O-264 O-264 APT100GF60LR IGBT 100A

    Untitled

    Abstract: No abstract text available
    Text: APT10035JLL 1000V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT10035JLL OT-227

    tc 7680

    Abstract: No abstract text available
    Text: APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT10026L2FLL O-264 O-264 MIL-STD-750 tc 7680

    Untitled

    Abstract: No abstract text available
    Text: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT10035B2FLL APT10035LFLL 1000V 28A 0.350W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT10035B2FLL APT10035LFLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10026RKVR 1000V 0.48A 26.0W POWER MOS V TO-220 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10026RKVR O-220 O-220 Pulsed20)

    Untitled

    Abstract: No abstract text available
    Text: APT10030L2VR 1000V 33A 0.300W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10030L2VR O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage


    Original     		PDF O-254 APT1004RCN O-254AA

    Untitled

    Abstract: No abstract text available
    Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


    OCR Scan     		PDF APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT10050LVR O-264

    APT801R2DN

    Abstract: APT5085DN
    Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN


    OCR Scan     		PDF APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT1004RBNR O S POWER MOS IV« 1000V 4.4A 4.00Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter


    OCR Scan     		PDF APT1004RBNR MIL-STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 APT1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT


    OCR Scan     		PDF APT1004RBN APT1004R2BN 1004RBN 1004R2BN APT1004R/1004R2BN O-247AD

    apt4020an

    Abstract: No abstract text available
    Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN


    OCR Scan     		PDF APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN


    OCR Scan     		PDF APT1001R6BN 1001R6BN O-247AD

    APT1001R1HN

    Abstract: APT1001R3HN APT901R1HN APT901R3HN
    Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,

    diode 944 lg

    Abstract: No abstract text available
    Text: A D V A N CE D POWER TEC HN O LO G Y M'lE J> 0 8 5 7 ^ 0 C OOOObDO b b b * A V P ADVANCED J 9OW ER T - s a - i s Te c h n o l o g y OD 4 Ì > : APT10040CFN 1000V 24.5A 0.40 APT9040CFN 900V 24.5A 0.40 i l Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT10040CFN APT9040CFN MIL-STD-750 diode 944 lg

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED r M po w er Tec h n o lo g y APT10025JVFR 1000v 34a 0.250Q POWER MOS V‘ FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10025JVFR 1000v OT-227 APT10025JVFR Con65) E145592