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    APT10M19BVR Price and Stock

    Microchip Technology Inc APT10M19BVRG

    MOSFET N-CH 100V 75A TO247
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    DigiKey APT10M19BVRG Tube 53 1
    • 1 $12.17
    • 10 $12.17
    • 100 $9.8875
    • 1000 $9.8875
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    Avnet Americas APT10M19BVRG Tube 2,222 26 Weeks 1
    • 1 $11.9266
    • 10 $11.9266
    • 100 $9.27225
    • 1000 $10.00506
    • 10000 $10.00506
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    Mouser Electronics APT10M19BVRG 50
    • 1 $12.17
    • 10 $12.17
    • 100 $12.17
    • 1000 $10.52
    • 10000 $10.52
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    Newark APT10M19BVRG Bulk 50
    • 1 $12.17
    • 10 $12.17
    • 100 $10.52
    • 1000 $9.88
    • 10000 $9.88
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    Microchip Technology Inc APT10M19BVRG Tube 26 Weeks
    • 1 $12.17
    • 10 $12.17
    • 100 $10.52
    • 1000 $9.65
    • 10000 $9.34
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    TME APT10M19BVRG 1
    • 1 $17.54
    • 10 $14.02
    • 100 $14.02
    • 1000 $14.02
    • 10000 $14.02
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    NAC APT10M19BVRG Tube 31
    • 1 $11.63
    • 10 $11.63
    • 100 $10.55
    • 1000 $9.65
    • 10000 $9.65
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    Richardson RFPD APT10M19BVRG 50
    • 1 -
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    • 100 $10.44
    • 1000 $10.44
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    Avnet Silica APT10M19BVRG 28 Weeks 50
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    EBV Elektronik APT10M19BVRG 27 Weeks 50
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    Master Electronics APT10M19BVRG
    • 1 -
    • 10 $11.81
    • 100 $10.01
    • 1000 $9.47
    • 10000 $9.47
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    Microchip Technology Inc APT10M19BVR

    FG, MOSFET, 100V, 0.019_OHM, TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC APT10M19BVR Tube 40
    • 1 -
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    APT10M19BVR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M19BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M19BVR Microsemi Power MOS V MOSFET Original PDF
    APT10M19BVRG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 75; RDS(on) (Ohms): 0.019; BVDSS (V): 100; Original PDF

    APT10M19BVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10M19BVR

    Abstract: No abstract text available
    Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M19BVR O-247 O-247 APT10M19BVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M19BVR O-247 O-247

    APT10M19BVR

    Abstract: No abstract text available
    Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT10M19BVR O-247 O-247 APT10M19BVR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced W7Æ P o w e r T e c h n o lo g y APT10M19BVR ioov 75a 0.0190 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT10M19BVR O-247 APT10M 19BVR

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: A • R W .\A A P T 10M 19B V R dvanced pow er Te c h n o lo g y " ioov 0.01 9q 75a POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF O-247 APT10M19BVR

    DIODE S45

    Abstract: 75 LS 541
    Text: A d van ced P o w er Te c h n o l o g y A P T 10 M 19 B V R 100V 0 .019a 75A POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF O-247 APT10M19BVR MIL-STD-750 O-247AD DIODE S45 75 LS 541