APT1002RCN Search Results

Contextual Info: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage

Contextual Info: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage

Contextual Info: A d va n ced P o w er Te c h n o l o g y APT1002RCN 1000V 5.5A 2.00Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ' dm V GS PD "^J’^S T G Tl All Ratings: T = 25°C unless otherwise specified.

1002R4CN

Contextual Info: AD VA N C E D POW ER T E C H N O L O G Y blE D • OEST'ìCH 0 0 0 0 7 0 5 3S1 H A V P A dvanced R o w er Te c h n o l o g y n A i<ifr-n .« r> „ POWER MOS IV™ APT1002RCN APT902RCN APT1002R4CN APT902R4CN 1000V 900V 1000V 900V 5.5A 5.5A 5.0A 5.0A

APT1002RCN

Contextual Info: D TO-254 G APT1002RCN 1000V 5.5A 2.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1002RCN UNIT 1000 Volts Drain-Source Voltage

APT1003R5CN

Abstract: APT1003R5GN APT801 APT5040CN APT801R2CN APT1002RCN APT4055GN APT5085GN APT601R2GN APT6060CN
Contextual Info: ADVANCED P OWE R TECHNOLOGY 20E D • OaSTTDT 0000277 1 T -3 ? - / 3 H ER M ETIC IS O L A T E D CO M M ERCIA L AND H I-R E L M ILITA R Y N -CHAN NEL M O S F ET S IN P U T CAPAC­ IT A N C E C IS S PF) PO W ER D IS S I­ P A T IO N PD(MAX) (WATTS) N O TES

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

Contextual Info: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN

APT6015LVR

Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT1004RGN

Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750

Contextual Info: ADVANCED POWER T EC HN O LO GY 2GE D • G2S7TDT 00GÜ277 T r - 3 ?~/3 HERMETIC ISOLATED COMMERCIAL AND HI-REL MILITARY N-CHANNEL MOSFETS INPUT CAPAC­ ITANCE CISS PF POW ER DISSI­ PATION PD(MAX) (WATTS) NOTES 12.0 880 125 1 5.0 20.0 880 125 1 1.20 6.5