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    APT40M Search Results

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    APT40M Price and Stock

    Microchip Technology Inc APT40M70JVR

    MOSFET N-CH 400V 53A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M70JVR Tube 40 1
    • 1 $43.95
    • 10 $43.95
    • 100 $37.9601
    • 1000 $37.9601
    • 10000 $37.9601
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    Avnet Americas APT40M70JVR Tube 20 Weeks 20
    • 1 -
    • 10 -
    • 100 $34.23145
    • 1000 $33.66045
    • 10000 $33.66045
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    Mouser Electronics APT40M70JVR 5
    • 1 $43.95
    • 10 $43.95
    • 100 $37.96
    • 1000 $37.96
    • 10000 $37.96
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    Newark APT40M70JVR Bulk 20
    • 1 $43.95
    • 10 $43.95
    • 100 $37.96
    • 1000 $35.67
    • 10000 $35.67
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    Microchip Technology Inc APT40M70JVR Tube 100 20 Weeks
    • 1 $43.95
    • 10 $43.95
    • 100 $37.96
    • 1000 $34.81
    • 10000 $33.68
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    Onlinecomponents.com APT40M70JVR
    • 1 -
    • 10 $42.83
    • 100 $39.17
    • 1000 $39.17
    • 10000 $39.17
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    TME APT40M70JVR 1
    • 1 $63.57
    • 10 $50.56
    • 100 $50.56
    • 1000 $50.56
    • 10000 $50.56
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    NAC APT40M70JVR Tube 8
    • 1 $40.79
    • 10 $40.79
    • 100 $37.57
    • 1000 $34.82
    • 10000 $34.82
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    Richardson RFPD APT40M70JVR 20
    • 1 -
    • 10 -
    • 100 $37.7
    • 1000 $37.7
    • 10000 $37.7
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    Master Electronics APT40M70JVR
    • 1 -
    • 10 $42.83
    • 100 $39.17
    • 1000 $39.17
    • 10000 $39.17
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    Microchip Technology Inc APT40M35JVR

    MOSFET N-CH 400V 93A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M35JVR Tube 2 1
    • 1 $70.15
    • 10 $70.15
    • 100 $70.15
    • 1000 $70.15
    • 10000 $70.15
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    Avnet Americas APT40M35JVR Tube 20 Weeks 10
    • 1 -
    • 10 $57.34745
    • 100 $53.70345
    • 1000 $53.70345
    • 10000 $53.70345
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    Mouser Electronics APT40M35JVR 1
    • 1 $70.15
    • 10 $70.15
    • 100 $60.58
    • 1000 $60.58
    • 10000 $60.58
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    Newark APT40M35JVR Bulk 10
    • 1 $70.15
    • 10 $70.15
    • 100 $60.58
    • 1000 $56.93
    • 10000 $56.93
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    Microchip Technology Inc APT40M35JVR Tube 20 Weeks
    • 1 $70.15
    • 10 $70.15
    • 100 $60.58
    • 1000 $55.57
    • 10000 $53.74
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    Onlinecomponents.com APT40M35JVR
    • 1 $66.99
    • 10 $59.93
    • 100 $55.39
    • 1000 $55.39
    • 10000 $55.39
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    TME APT40M35JVR 1
    • 1 $101.41
    • 10 $80.65
    • 100 $80.65
    • 1000 $80.65
    • 10000 $80.65
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    NAC APT40M35JVR 5
    • 1 $65.07
    • 10 $65.07
    • 100 $59.93
    • 1000 $55.55
    • 10000 $55.55
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    Master Electronics APT40M35JVR
    • 1 $66.99
    • 10 $59.93
    • 100 $55.39
    • 1000 $55.39
    • 10000 $55.39
    Buy Now

    Microchip Technology Inc APT40M42JN

    MOSFET N-CH 400V 86A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M42JN Tray
    • 1 -
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    Microchip Technology Inc APT40M75JN

    MOSFET N-CH 400V 56A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M75JN Tray
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    Microchip Technology Inc APT40M70JVFR

    MOSFET N-CH 400V 53A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M70JVFR Tube 14
    • 1 -
    • 10 -
    • 100 $25.62714
    • 1000 $25.62714
    • 10000 $25.62714
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    APT40M Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT40M35JVFR Microsemi Power MOS V FREDFET Original PDF
    APT40M35JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M35PVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M42DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT40M42JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT40M42JN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 86A ISOTOP Original PDF
    APT40M70B2VFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70B2VFRG Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70JVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 400V 53A SOT-227 Original PDF
    APT40M70JVFR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 53A SOT-227 Original PDF
    APT40M70JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M70LVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70LVFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 57A TO-264 Original PDF
    APT40M70LVFRG Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70LVFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 57A TO-264 Original PDF
    APT40M70LVR Advanced Power Technology POWER MOS V 400V 57A 0.070 Ohm Original PDF
    APT40M75JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT40M75JN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 56A ISOTOP Original PDF
    APT40M80DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF

    APT40M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    APT40M70JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    APT40M70LVR O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


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    APT40M35PVR PDF

    "DIODE" SY 171 1 g

    Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
    Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise


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    APT40M42BFN APT35M42BFN MIL-STD-750 "DIODE" SY 171 1 g diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m PDF

    APT40M70JVR

    Abstract: EN805
    Text: • R A dvan c ed W/Æ P ow er Techno lo g y APT40M70JVR 4oov 53a o.o7oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT40M70JVR OT-227 E145592 EN805 PDF

    TI OAE

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


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    APT40M35JVR OT-227 APT40M35JVR E145592 TI OAE PDF

    diode sy 171 10

    Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
    Text: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*


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    0000SÃ APT40M42BFN APT35M42BFN 97702-1035bol MIL-STD-750 diode sy 171 10 diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 Diode SY 350 PDF

    40M75JN

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT40M75JN 400V 56.0A 0.075£2 APT40M90JN 400V 51.0A 0.090£2 ISOTOP* "UL Recognized" File No. E145592 S N-CHANNEL ENHANCEMENT MOI^HIg ITw JLT^GE MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage A PT 40M75JN


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    APT40M75JN APT40M90JN E145592 40M75JN 40M90JN PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    APT40M35JVR OT-227 APT40M35JVR MIL-STD-750 832nH. OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR 53A 0.070Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT40M70JVR OT-227 E145592 PDF

    To267

    Abstract: TO-267
    Text: APT40M82WVR 44A 0.082Ω 400V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT40M82WVR O-267 O-267 To267 TO-267 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT40M42JN 400V 86A 0.042«! "UL Recognized" File No. E145592 S IS O T O P 1 POWER MOS IV® SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified


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    APT40M42JN E145592 40M42JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR A DVAN CED PO W ER Te c h n o lo g y 400V 53A 0.070Q POWER MOSV Power MOS V'" is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT40M70JVR OT-227 APT40M70JVR MIL-STD-750 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35PVR 400V W 89A 0.035W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


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    APT40M35PVR Repetitive14 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    APT40M35JVR OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT40M70JVFR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVFR 400V Ω 93A 0.035Ω POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT40M35JVFR OT-227 Cont157) E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC ED PO WE R T E C H N O L O G Y □ EST'IO'I 0 0 0 0 5 0 4 bTB * A V P 41E D A Ô'W dvanced P O W iz R O s {2 ) 'T - ÿ i- is . APT40M80AFN 400V 58.0A 0.08; APT35M80AFN 350V 58.0A 0.08L POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE


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    APT40M80AFN APT35M80AFN MIL-STD-750 PDF

    APT8030JN

    Abstract: apt20m25jnr APT8018JNFR apt10050jn APT5012 apt5010jn
    Text: w!Zá A d vanced POW ER TE€2HN0L0GY' APT Product Selector Guide Rds ON (ohms) (watts) (amperes) 100 0.013 520 150 APT10M13JNR+ 4-7 200 0.025 520 100 APT20M25JNR+ 8-11 300 0.045 520 70 APT30M45JNR+ 12-15 400 0.075 0.042 520 690 56 86 APT40M75JN APT40M42JN


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    APT10M13JNR+ APT20M25JNR+ APT30M45JNR+ APT40M75JN APT40M42JN APT5010JN APT5012JNU2* APT5012JNU3* APT50M60JN APT6015JN APT8030JN apt20m25jnr APT8018JNFR apt10050jn APT5012 PDF

    APT40M70B2VFR

    Abstract: APT40M70B2VFRG APT40M70LVFR APT40M70LVFRG
    Text: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M70LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


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    APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M70LVFRG* O-264 O-264 APT40M70B2 O-247 APT40M70B2VFR APT40M70B2VFRG APT40M70LVFR APT40M70LVFRG PDF

    Untitled

    Abstract: No abstract text available
    Text: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


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    APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* O-264 O-264 APT40M70B2 O-247 PDF

    APT40M35JVFR

    Abstract: No abstract text available
    Text: APT40M35JVFR 400V Ω 0.035Ω 93A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT40M35JVFR OT-227 E145592 APT40M35JVFR PDF

    APT40M70JVFR

    Abstract: No abstract text available
    Text: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT40M70JVFR OT-227 E145592 APT40M70JVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er T e c h n o lo g y APT40M42JN 400V 86A 0.042Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    APT40M42JN E145592 40M42JN OT-227 PDF