bzx55c10
Abstract: BZX55C12 BZX55-C5V1 BZX55C5V1 BZX55-C18 bzx55c18 bzx55c13 bzx55c15 BZX55C24 BZX55C2V7
Text: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101
|
Original
|
BZX55C2V4
BZX55C100
500mW
TS16949
AECQ101
2002/95/EC
DO-35
MIL-STD-750,
DO-35
CHAR50
bzx55c10
BZX55C12
BZX55-C5V1
BZX55C5V1
BZX55-C18
bzx55c18
bzx55c13
bzx55c15
BZX55C24
BZX55C2V7
|
PDF
|
BZX55-C13
Abstract: BZX55-C8V2 BZX55C13 BZX55C6V2 BZX55C5V1
Text: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101
|
Original
|
BZX55C2V4
BZX55C100
500mW
TS16949
AECQ101
2002/95/EC
DO-35
MIL-STD-750,
DO-35
2012-REV
BZX55-C13
BZX55-C8V2
BZX55C13
BZX55C6V2
BZX55C5V1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S1A - S1M CREAT BY ART Pb 1.0AMP Surface Mount Rectifiers SMA/DO-214AC RoHS COMPLIANCE Features For surface mounted application Glass passivated chip junction Low forward voltage drop High current capability Easy pick and place High surge current capability
|
Original
|
SMA/DO-214AC
AEC-Q101
J-STD-002B
JESD22-B102D
RS-481
inc175
50mVp-p
300us
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)
|
Original
|
TK20S06K3L
|
PDF
|
MUR360S
Abstract: 320s
Text: MUR305S - MUR360S CREAT BY ART Pb RoHS 3.0 AMPS. Surface Mount Ultrafast Power Rectifiers SMC/DO-214AB COMPLIANCE Features For surface mounted application Glass passivated junction chip Low profile package Built-in strain relief Qualified as per AEC-Q101
|
Original
|
SMC/DO-214AB
MUR305S
MUR360S
AEC-Q101
SMC/DO-214AB
RS-481
MUR305S-320S
MUR340S-360S
MUR305S-320S
MUR360S
320s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)
|
Original
|
TK80F06K3L
O-220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESH2B - ESH2D CREAT BY ART 2.0AMPS Surface Mount Super Fast Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement
|
Original
|
SMB/DO-214AA
AEC-Q101
RS-481
300us
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
|
Original
|
TJ150F04M3L
O-220SM
|
PDF
|
TK70J04K3Z
Abstract: No abstract text available
Text: TK70J04K3Z MOSFETs Silicon N-channel MOS U-MOS TK70J04K3Z 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
|
Original
|
TK70J04K3Z
TK70J04K3Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBR30H100CT CREAT BY ART Pb 30.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, low forward voltage drop Plastic material used carriers Underwriters Laboratory Classification 94V-0
|
Original
|
MBR30H100CT
O-220AB
AEC-Q101
O-220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
|
Original
|
TK100F04K3L
AEC-Q101
O-220SM
|
PDF
|
ES1JL
Abstract: ru 94v-0
Text: ES1AL thru ES1JL Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1405035
ES1JL
ru 94v-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive
|
Original
|
ICTE18C,
1N6373
1N6386
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
SRAF520
SRAF5150
E-326243
2011/65/EU
2002/96/EC
ITO-220AC
AEC-Q101
JESD22-B102
D1309004
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1403011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
SR202
SR220
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
JESD22-B102
|
PDF
|
ZXMP6A13FTA
Abstract: ZXMP6A13FT ZXMP6A13F
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications
|
Original
|
ZXMP6A13F
AEC-Q101
DS32014
522-ZXMP6A13FTA
ZXMP6A13FTA
ZXMP6A13FTA
ZXMP6A13FT
ZXMP6A13F
|
PDF
|
BZT52C5V1-V
Abstract: BZT52C43V
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener
|
Original
|
BZT52-V-Series
OT-23
BZX84
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
GS18/10
BZT52C5V1-V
BZT52C43V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
|
Original
|
PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
|
PDF
|
BY252P
Abstract: No abstract text available
Text: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
BY251P
BY255P
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2011/65/EU
2002/95/EC.
BY252P
|
PDF
|
AAK marking code
Abstract: nsi45035 nsi45035jzt1g DN060 AAKG marking code driver AAK AND83
Text: NSI45035JZT1G Adjustable Constant Current Regulator & LED Driver 45 V, 35 − 70 mA + 15%, 1.5 W Package The adjustable constant current regulator CCR is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs (similar to Constant Current
|
Original
|
NSI45035JZT1G
NSI45035JZ/D
AAK marking code
nsi45035
DN060
AAKG marking code
driver AAK
AND83
|
PDF
|
SOT 23 marking code a6 diode
Abstract: No abstract text available
Text: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
BAS16-V
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
BAS16-V
BAS16-V-GS18
2011/65/EU
2002/95/EC.
SOT 23 marking code a6 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
P300A
P300M
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2011/65/EU
2002/95/EC.
|
PDF
|
SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
|
Original
|
PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
|
PDF
|
