1N6386 Search Results
1N6386 Price and Stock
Vishay Semiconductors 1N6386-E3-73TVS DIODE 18VWM 25.5VC 1.5KE |
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1N6386-E3-73 | Ammo Pack |
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Vishay Semiconductors 1N6386-E3-54TVS DIODE 18VWM 25.5VC 1.5KE |
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1N6386-E3-54 | Reel |
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Vishay Semiconductors 1N6386HE3_A-DTVS DIODE 18VWM 25.5VC 1.5KE |
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1N6386HE3_A-D | Ammo Pack |
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Vishay Semiconductors 1N6386HE3_A-CTVS DIODE 18VWM 25.5VC 1.5KE |
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1N6386HE3_A-C | Reel |
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NJ SEMI 1N6386 |
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1N6386 | 2,414 | 2 |
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1N6386 Datasheets (13)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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1N6386 | MDE Semiconductor | 18.00V 50A 1500W peak pulse power glass passivated junction transient voltage suppressor | Original | |||
1N6386 |
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Transient Voltage Suppressor | Original | |||
1N6386 | Motorola | Zener Transient Voltage Suppressors Unidirectional and Bidirectional | Original | |||
1N6386 | International Semiconductor | TRANSIENT VOLTAGE SUPPRESSOR | Scan | |||
1N6386 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
1N6386-E3/54 | Vishay General Semiconductor | TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE | Original | |||
1N6386-E3/73 | Vishay General Semiconductor | TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE | Original | |||
1N6386HE3_A/C | Vishay Semiconductor Diodes Division | Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE | Original | |||
1N6386HE3_A/D | Vishay Semiconductor Diodes Division | Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE | Original | |||
1N6386HE3/51 | Vishay Semiconductor Diodes Division | Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE | Original | |||
1N6386HE3/54 | Vishay General Semiconductor | TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE | Original | |||
1N6386HE3/73 | Vishay General Semiconductor | TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE | Original | |||
1N6386RL4 |
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1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressor | Original |
1N6386 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive |
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ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. | |
Contextual Info: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction |
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ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05 | |
88356
Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
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ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 | |
Contextual Info: 1N6386 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage21 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage18 I(PPM) Max.(A)Pk.Pulse Current50 |
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1N6386 Voltage21 Voltage18 Current50 Voltage25 StyleAxial-10 | |
28 volt transzorbContextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) |
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ICTE18C, 1N6373 1N6378 1N6382 1N6386 265OC/10 08-Apr-05 28 volt transzorb | |
1N6373
Abstract: 1N6374 1N6386 ICTE18C J-STD-002
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ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002 | |
88356
Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
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ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 | |
1N6373
Abstract: 1N6374 1N6386 ICTE18C J-STD-002
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ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002 | |
Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a |
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ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
1N6373
Abstract: 88356 1N6382 1N6378 1N6386 ICTE18C
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ICTE18C, 1N6373 1N6378 1N6382 1N6386 23-May-03 88356 1N6378 1N6386 ICTE18C | |
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : |
Original |
ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle : |
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ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 | |
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
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SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N | |
SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
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represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 | |
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
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5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z | |
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits |
OCR Scan |
1-619-71S7280 1500pcs) MPTE995-5000 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s |
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DiodesA9337-2726 VMN-SG2124-1401 | |
XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
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vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG | |
1N623
Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
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1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N623 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383 | |
1N6377
Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
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ICTE15C MPTE-45 1N6373 1N6381 1N6382 1N6389 ICTE-10C ICTE-12C ICTE-15C ICTE-18C 1N6377 1N6385 1N6389 MPTE-45 ICTE-12 equivalent MPTE-15 | |
1N6389
Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
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1N6382 1N6389 ICTE-10C ICTE-36C, MPTE-45C) r14525 1N6382/D 1N6373 1N6381 1N6383 1N6384 ICTE-36C MPTE-45C | |
transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
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OCR Scan |
SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 | |
TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
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vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801 |