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Sensitron Semiconductors 1DB48-109Z-001 DATAPACK - Bulk (Alt: 1DB48-109Z-001 DATAPACK)
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Avnet Americas	1DB48-109Z-001 DATAPACK	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 PRE CAP - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 PRE CAP)
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Sensitron Semiconductors 1DB48-109Z-001 WAFER LOT - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 WAFER LOT)
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Avnet Americas	1DB48-109Z-001 WAFER LOT	No Container			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 PK4-35 - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 PK4-35)
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Avnet Americas	1DB48-109Z-001 PK4-35	No Container			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sensitron Semiconductors 1DB48-109Z-001 GROUP B TEST - Virtual or Non-Physical Inventory (Software & Literature) (Alt: 1DB48-109Z-001 GROUP B TEST)
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Avnet Americas	1DB48-109Z-001 GROUP B TEST	No Container			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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9Z001 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2052-5636-02 100pf Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION	Original	NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS	PDF
NE5520379A Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5520379A NE5520379A	PDF
silicon power gmbh Abstract: NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5520379A NE5520379A	PDF
12c5a Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.	Original	NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC	PDF
NE5520379A Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5520379A NE5520379A NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec	PDF
LM50 sot23-5 Abstract: LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737 Text: 2005^ 4 ^ 1 m m jim m m t t * * * « it m * * m m m m m z m m m m z * . u tm u m h * * * » » \|t f c g « M 2 -7 n ^ fts a » a « * ' Ä lttlÄ Ä B te ir a f e >m ' « « f t * X \|I » J : TO m » • REID M U M ttA ' K ä U M U M ß U l Mtklrm •	OCR Scan	LM6181 Narrow-16, LM7171 CERPACK-10, LM7372 LMC6035 LM50 sot23-5 LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5520379A NE5520379A	PDF