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    9N65 Search Results

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    9N65 Price and Stock

    STMicroelectronics STL19N65M5

    MOSFET N-CH 650V 12.5A PWRFLAT88
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    DigiKey STL19N65M5 Cut Tape 2,408 1
    • 1 $3.3
    • 10 $2.148
    • 100 $3.3
    • 1000 $1.12254
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    STL19N65M5 Digi-Reel 2,408 1
    • 1 $3.3
    • 10 $2.148
    • 100 $3.3
    • 1000 $1.12254
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    EBV Elektronik STL19N65M5 143 Weeks 3,000
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    onsemi NVBG089N65S3F

    SF3 FRFET AUTO, 89MOHM, D2PAK 7L
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    DigiKey NVBG089N65S3F Digi-Reel 1,560 1
    • 1 $10.09
    • 10 $6.96
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    NVBG089N65S3F Cut Tape 1,560 1
    • 1 $10.09
    • 10 $6.96
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    NVBG089N65S3F Reel 800 800
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    Newark NVBG089N65S3F Reel 800
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    Rochester Electronics NVBG089N65S3F 8,300 1
    • 1 $5.38
    • 10 $5.38
    • 100 $5.06
    • 1000 $4.57
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    STMicroelectronics STP9N65M2

    MOSFET N-CH 650V 5A TO220
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    DigiKey STP9N65M2 Tube 963 1
    • 1 $2.47
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    • 1000 $0.79952
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    Mouser Electronics STP9N65M2 923
    • 1 $1.67
    • 10 $1.07
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    Newark STP9N65M2 Bulk 932 1
    • 1 $2.01
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    STMicroelectronics STP9N65M2 923 1
    • 1 $1.64
    • 10 $1.05
    • 100 $0.95
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    Bristol Electronics STP9N65M2 950
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    Avnet Silica STP9N65M2 900 15 Weeks 50
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    Vishay Siliconix IRFB9N65APBF-BE3

    MOSFET N-CH 650V 8.5A TO220AB
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    DigiKey IRFB9N65APBF-BE3 Tube 828 1
    • 1 $3.83
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    onsemi FCH099N65S3-F155

    MOSFET N-CH 650V 30A TO247-3
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    DigiKey FCH099N65S3-F155 Tube 645 1
    • 1 $5.07
    • 10 $5.07
    • 100 $3.75367
    • 1000 $3.67563
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    Mouser Electronics FCH099N65S3-F155 398
    • 1 $4.97
    • 10 $4.07
    • 100 $3.68
    • 1000 $3.67
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    Rochester Electronics FCH099N65S3-F155 586 1
    • 1 $4.08
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    • 100 $3.84
    • 1000 $3.47
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    TME FCH099N65S3-F155 1
    • 1 $6.41
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    • 100 $4.22
    • 1000 $3.58
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    Richardson RFPD FCH099N65S3-F155 450
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    Avnet Silica FCH099N65S3-F155 13 Weeks 30
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    EBV Elektronik FCH099N65S3-F155 14 Weeks 30
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    Flip Electronics FCH099N65S3-F155 6,300
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    9N65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 9N65K-MT Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    9N65K-MT 9N65K-MT QW-R205-017 PDF

    618 MOSFET

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    O-220 QW-R502-618 618 MOSFET PDF

    9N65

    Abstract: 618 MOSFET MOSFET 618 9A650V 618 diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    QW-R502-618 9N65 618 MOSFET MOSFET 618 9A650V 618 diode PDF

    9N65

    Abstract: DMG9N DMG9N65CT 9N65CT
    Text: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CT O-220AB AEC-Q101 O-220AB, DS35619 9N65 DMG9N DMG9N65CT 9N65CT PDF

    650VVGS

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CTI ITO-220AB AEC-Q101 DS36027 650VVGS PDF

    Untitled

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CTI ITO-220AB AEC-Q101 DS36027 PDF

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original
    IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 PDF

    DMG9N65CT

    Abstract: No abstract text available
    Text: 9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description •      This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CT O-220AB AEC-Q101 DS35619 DMG9N65CT PDF

    Untitled

    Abstract: No abstract text available
    Text: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CT O-220AB AEC-Q101 DS35619 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original
    DMG9N65CTI ITO-220AB AEC-Q101 DS36027 PDF

    Untitled

    Abstract: No abstract text available
    Text: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE 9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1)


    OCR Scan
    0000L IXTE9N65X4 PDF