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    A6T Diode

    Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
    Text: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF


    Original     		PDF 95513C IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF AN-994. IRFR/U3710Z A6T Diode diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z

    Untitled

    Abstract: No abstract text available
    Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500


    Original     		PDF 33N50 O-264

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    125OC

    Abstract: IXTK33N50
    Text: IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID cont = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data TO-264 AA Symbol Test conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous


    Original     		PDF 33N50 O-264 125OC IXTK33N50

    IXTK33N50

    Abstract: No abstract text available
    Text: DIXYS High Current MegaMOS FET IXTK 33N50 V DSS I D cont p DS(on) 500 V 33 A 0.17 Q N-Channel Enhancement Mode Preliminary data Symbol Test conditions v DSS Tj = 25°C to 150°C vDQB Tj TO-264AA Maximum ratings = 25°C to 150°C; RGS=1.0 MQ 500 V 500 V


    OCR Scan     		PDF 33N50 O-264AA 33N50 IXTK33N50