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    940 MOSFET Search Results

    940 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    940 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GRM42-6 COG 221 J

    Abstract: PD85015-E DB-85015-940 grm42-6x7r PD85015 102J EEVHB1V100P EXCELDRC35C GRM42-6 GRM42-6 COG
    Text: DB-85015-940 RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 860 - 940 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 W ■ Power gain: 15.7 ± 0.4 dB ■ Efficiency: 60% - 62%


    Original     		DB-85015-940 PD85015-E DB-85015-940 GRM42-6 COG 221 J PD85015-E grm42-6x7r PD85015 102J EEVHB1V100P EXCELDRC35C GRM42-6 GRM42-6 COG PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 150 MHK 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET -"" -."" # #7  * +,         ( )* 20 +3  8 5 3  ( )* 20 +3 : Values Units * /)0 )40 5*0 940 )*0 6 6 ;40<<<=5*0 + )40 5*0 940 )*0


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    Untitled

    Abstract: No abstract text available
    Text: SK 150 MHK 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET -"" -."" # #7  * +,         ( )* 20 +3  8 5 3  ( )* 20 +3 : Values Units * /)0 )40 5*0 940 )*0 6 6 ;40<<<=5*0 + )40 5*0 940 )*0


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    specifications of MOSFET

    Abstract: mosfet specification
    Text: SK 150 MHK 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET -"" -."" # #7  * +,         ( )* 20 +3  8 5 3  ( )* 20 +3 : Values Units * /)0 )40 5*0 940 )*0 6 6 ;40<<<=5*0 + )40 5*0 940 )*0


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    Untitled

    Abstract: No abstract text available
    Text: SK 150 MHK 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET -"" -."" # #7  * +,         ( )* 20 +3  8 5 3  ( )* 20 +3 : Values Units * /)0 )40 5*0 940 )*0 6 6 ;40<<<=5*0 + )40 5*0 940 )*0


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    mosfet power totem pole CIRCUIT

    Abstract: IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET
    Text: Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs. 1 2. Grounded Loads . 1


    Original     		AN-940 mosfet power totem pole CIRCUIT IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET PDF

    diode aa7

    Abstract: aa7 diode
    Text: SK 150 MHK 055 T Absolute Maximum Ratings Symbol Conditions MOSFET -"" -."" # #7  * +,         ( )* 20 +3  8 5 3  ( )* 20 +3 : Values Units * /)0 )40 5*0 940 )*0 6 6 ;40<<<=5*0 + )40 5*0 940 )*0 6 6 ;40<<<=5*0


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    diode marking 33a on semiconductor

    Abstract: marking 33a on semiconductor
    Text: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 940 m Features Description • RDS on = 880 m (Typ.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		FDA33N25 FDA33N25 diode marking 33a on semiconductor marking 33a on semiconductor PDF

    mosfet power totem pole CIRCUIT

    Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
    Text: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


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    mosfet power totem pole CIRCUIT

    Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
    Text: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 PDF

    J307

    Abstract: ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HR3 MRF8S9100HSR3 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 ATC100B200JT500X ATC100B200 AN1955 C101 JESD22 MRF8S9100HSR3 A114 A115 PDF

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT PDF

    J239

    Abstract: No abstract text available
    Text: Document Number: AFT09H310−03S Rev. 1, 9/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		AFT09H310â 03SR6 04GSR6 J239 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		AFV09P350--04N AFV09P350-04NR3 AFV09P350-04GNR3 PDF

    AFV09P350-04NR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		AFV09P350--04N AFV09P350-04NR3 AFV09P350-04GNR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3 PDF

    MRF8S9260HSR3

    Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H
    Text: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H PDF

    J377

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9170N MRF8S9170NR3 J377 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9102N MRF8S9102NR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev. 0, 11/2009 RF Power Field Effect Transistors MRF8S9220HR3 MRF8S9220HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 920 to


    Original     		MRF8S9220H MRF8S9220HR3 MRF8S9220HSR3 MRF8S9220HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 PDF

    ATC100B2R0BT500X

    Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9170N MRF8S9170NR3 ATC100B2R0BT500X atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB PDF

    22-15-2256

    Abstract: MRF8S9260HR3
    Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 22-15-2256 PDF