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    93C46 DIP Search Results

    93C46 DIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7M2-122 Coilcraft Inc Variable Inductor, 1.1uH Min, 1.3uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc
    7M2-272 Coilcraft Inc Variable Inductor, 2.4uH Min, 3uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc
    7M2-561 Coilcraft Inc Variable Inductor, 0.526uH Min, 0.594uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc
    7M3-103 Coilcraft Inc Variable Inductor, 8uH Min, 12uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc
    7M3-182 Coilcraft Inc Variable Inductor, 1.4uH Min, 2.2uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc

    93C46 DIP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    93C06 6

    Abstract: 93C06 93C46X 200B 93C46 93C46T DS11179 93C46 national
    Text: 93C06/46 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS NC 1 8 NC VCC 2 7 V SS CS 3 6 DO CLK 4 5 DI 93C06 93C46 SOIC 93C06 93C46 • Low power CMOS technology


    Original
    93C06/46 93C06 93C46 16-bit 93C06) 93C46) DS11179D-page 93C06 6 93C06 93C46X 200B 93C46 93C46T DS11179 93C46 national PDF

    93C46

    Abstract: chip 8-pin 93C46 93C56 93c46 6 93C56 catalyst 93C66 93c56 14 pin
    Text: CAT93C46/56/57/66/86 LEAD-FREE PACK AGE OPTION 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention


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    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C56/57/66: 93C46/86: CAT93C46) CAT93C86 CAT93C46/56/57/66/86 93C46 chip 8-pin 93C46 93C56 93c46 6 93C56 catalyst 93C66 93c56 14 pin PDF

    93C46SI

    Abstract: No abstract text available
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology


    Original
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: 93C46) 93C86 93C46 93C46: 93C56: 93C57: 93C46SI PDF

    93C56 14 pin

    Abstract: 93C46 93C56 93C46 tssop 93C56 14 pins 93C46 dip chip 8-pin 93C66 93C86AN 93C46 DATASHEET 93C66
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology


    Original
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C56/57/66: 93C46/86: CAT93C46) CAT93C86 CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-bit 93C56 14 pin 93C46 93C56 93C46 tssop 93C56 14 pins 93C46 dip chip 8-pin 93C66 93C86AN 93C46 DATASHEET 93C66 PDF

    93C46x

    Abstract: 93C06 6 93C46T 93C46 602 93C46 dip chip 8-pin 93C46 SM 1628
    Text: 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles • Automatic ERASE before WRITE


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    93C06/46 93C06) 93C46) DS11179C-page 93C46x 93C06 6 93C46T 93C46 602 93C46 dip chip 8-pin 93C46 SM 1628 PDF

    93c66

    Abstract: 93C86 01XXXXXXXXX
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology


    Original
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C56/57/66: 93C46/86: CAT93C46) CAT93C86 CAT93C46/56/57/66/86 93c66 93C86 01XXXXXXXXX PDF

    93C56

    Abstract: 93C56 14 pins 93C46SI
    Text: CAT93C46/56/57/66/86 "GREEN" PACKAGES -Lead free 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention


    Original
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C56/57/66: 93C46/86: CAT93C46) CAT93C86 CAT93C46/56/57/66/86 93C56 93C56 14 pins 93C46SI PDF

    93C46SI

    Abstract: 93C46 93C56 14 pin 93C46 14 soic pin 93C46 dip 93C86 chip 8-pin 93C66 93C56 93C46S 93C46 tssop
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology


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    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: 93C46) 93C86 93C46 93C46: 93C56: 93C57: 93C46SI 93C46 93C56 14 pin 93C46 14 soic pin 93C46 dip chip 8-pin 93C66 93C56 93C46S 93C46 tssop PDF

    93c46

    Abstract: memory 93C46 93C46 tssop
    Text: H CAT93C46/56/57/66/86 EE GEN FR ALO 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 year data retention


    Original
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: CAT93C46) CAT93C86 CAT93C46/56/57/66/86 93c46 memory 93C46 93C46 tssop PDF

    93c46 LN

    Abstract: 93c46w 93c46 st
    Text: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology


    OCR Scan
    93C46 93C46 93C46X 93LC46. DS20041F-page MCHPD001 93c46 LN 93c46w 93c46 st PDF

    Untitled

    Abstract: No abstract text available
    Text: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology


    OCR Scan
    93C46 93C46 93C46X DS20041 93C46X 93C46T PDF

    Untitled

    Abstract: No abstract text available
    Text: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc, 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology


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    93C46 93C46 93C46X DS20041E-6 93C46X 93C46T PDF

    IC 93c46

    Abstract: No abstract text available
    Text: & 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology


    OCR Scan
    93C46 93C46 93C46X DS20041D-7 DS20041 IC 93c46 PDF

    93c46

    Abstract: tms1000 8051 interfacing with 93c46 93c46 6 93C46 dip instruction set and programming of 8096 memory 93C46 eeprom 93c46 93c46e 8051 interfacing to EEProm
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features ideal For Low-Density Data Storage Advanced CMOS EEPROM Technology — — — • Read/Write Non-volatile Memory


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    93C46 024-Bit 93c46 tms1000 8051 interfacing with 93c46 93c46 6 93C46 dip instruction set and programming of 8096 memory 93C46 eeprom 93c46 93c46e 8051 interfacing to EEProm PDF

    IC 93c46

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization


    OCR Scan
    93C46 024-Bit TMS1000, IC 93c46 PDF

    93c46 st

    Abstract: 93C46 93C46 dip 93C46x memory 93C46
    Text: 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology 64 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and WRITE cycles Automatic ERASE before WRITE Power on/off data protection circuitry


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    93C46 93C46 DS20041B-6 93C46X DS20041B-8 93c46 st 93C46 dip 93C46x memory 93C46 PDF

    93C46

    Abstract: IC 93c46 93c46 6
    Text: 4ÖM070? OOOüa^b S M I C 37E D INTERNATIONAL C M O S 71 INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Read/Write Non-volatile Memory — Single 5V supply operation


    OCR Scan
    93C46 024-Bit TMS1000, 100nA 93C46 IC 93c46 93c46 6 PDF

    93CQ6

    Abstract: 93c06 national semiconductor
    Text: 93C06/46 M ic r o c h ip 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Low power CMOS technology DIP • 16 bit memory organization - 16 x 16-bit organization 93C06 - 64 x 16-bit organization (93C46) • Single 5V only operation • Self-timed ERASE and WRITE cycles


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    93C06/46 16-bit 93C06) 93C46) 93C06/46 DS11179D-page 93CQ6 93c06 national semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: NM93C46 1024-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM 93C46 devices are 1024 bits of CM OS non-volatile electrically erasable m em ory divided into 6 4 1 6-bit registers. They are fabricated using Fairchild Sem iconductor's floating-gate CMOS


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    NM93C46 1024-Bit 93C46 PDF

    93C46SI

    Abstract: 93C46 ST 93c86 93C46 dip 93C66 93C46 93C56 14 pin 93C86 93c46 st 93C56 catalyst 93C66
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz ■ 1,000,000 Program/Erase Cycles ■ 100 Year Data Retention ■ Low Power CMOS Technology


    OCR Scan
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: CAT93C46/56/57/66/86 CAT93C46/56/ MS001 00034G2 DGD374G 93C46SI 93C46 ST 93c86 93C46 dip 93C66 93C46 93C56 14 pin 93C86 93c46 st 93C56 catalyst 93C66 PDF

    IC 93c46

    Abstract: chip 8-pin 93C46 catalyst 93c86 memory 93C46 3.gnd dip-8 93C86 93C46
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles Low Power CMOS Technology 1.8 to 6.0 Volt Operation Commercial, Industrial and Automotive


    OCR Scan
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: 93C46) 93C86 CAT93C46/56/57/66/86 93C86 93C46/56/57/66/86 IC 93c46 chip 8-pin 93C46 catalyst 93c86 memory 93C46 3.gnd dip-8 93C46 PDF

    93C06

    Abstract: 93C46 93C46T 93C46X 93LC46 93C06 6
    Text: M 93C06/46 ic r o c h ip 256 Bit/IK 5.0V CMOS Serial EEPROM PACKAGETYPE FEATURES • Low power CMOS technology DIP s C 1 8 □ Vcc CLK C 2 7 □ NC • 16 bit m emory organization - 64 x 16 bit organization 93C46 • Single 5 volt only operation DI C 3


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    93C06/46 93C06) 93C46) 93C06 93C46 93C46T 93C46X 93LC46 93C06 6 PDF

    93c tssop

    Abstract: 93C86
    Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation


    OCR Scan
    CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit 93C46/56/57/66: 93C86: 93C46) 93C86 devi40) MS001 0G034G2 93c tssop PDF

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles


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    93C06/46 93C06) 93C46) 93C06/46 DSl1179B-page PDF