2SA1882
Abstract: 2SC4984 ITR04972 ITR04973 ITR04974
Text: Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions • Low-frequency power amplifier applications. · Medium-speed switching. · Small-sized motor drivers.
|
Original
|
PDF
|
ENN4633A
2SA1882/2SC4984
2SA1882/2SC4984]
25max
2SA1882
2SA1882
2SC4984
ITR04972
ITR04973
ITR04974
|
EC3H06B
Abstract: TA248
Text: Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions unit:mm 2183 [EC3H06B] 0.15 0.15 0.05 1 2 0.05 3 0.5 1.0 0.4 0.05 0.25 0.35 0.2 0.25 • Low noise : NF=0.9dB typ f=1GHz .
|
Original
|
PDF
|
ENN6524
EC3H06B
EC3H06B]
S21e2
11GHz
1006size)
E-CSP1006-3
EC3H06B
TA248
|
K2530
Abstract: 2SK2530 64063
Text: Ordering number:ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low voltage drive. unit:mm 2083B [2SK2530] 2.3 1.5 6.5 5.0 4 0.5 5.5 7.0 Features 1.2
|
Original
|
PDF
|
ENN6406
2SK2530
2083B
2SK2530]
2092B
K2530
2SK2530
64063
|
2SJ416
Abstract: FX856 SB07-03P 53723
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
|
Original
|
PDF
|
ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
SB07-03P
53723
|
2SA1882
Abstract: 2SC4984 ITR04972 ITR04973
Text: 2SA1882 / 2SC4984 Ordering number : EN4633B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1882 / 2SC4984 Low-Frequency General-Purpose Amplifier Applications Applications • • • Low-frequency power amplifier applications.
|
Original
|
PDF
|
2SA1882
2SC4984
EN4633B
2SA1882
2SC4984
ITR04972
ITR04973
|
SDA 5450
Abstract: SQFP208 CCIR601 LC74981W
Text: 注文コードNo.N 6 6 7 8 No. N 6 6 7 8 92500 新 LC74981W CMOS LSI LCD-TV用スキャンコンバータLSI で ある。デジタルデコーダ, マイコン, 液晶パネルと組み合わせることにより容易に液晶テレビの映像信号処理回
|
Original
|
PDF
|
LC74981W
LC74981WNTSC/PALXGALSI
480P/480I)
SQFP208
SANYOSQFP208
92500TS
B8-5554
YIN70
YCbCrCCIR601
SDA 5450
SQFP208
CCIR601
LC74981W
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5436A NPN Epitaxial Planar Silicon Transistor TS4162 VHF Band Low-Noise Amplifier and OSC Applications Package Dimensions • Low noise : NF=1.8dB typ f=150MHz . · High gain : S21e2=16dB typ (f=150MHz). · Ultrasmall package facilitates miniaturization in end
|
Original
|
PDF
|
ENN5436A
TS4162
150MHz)
S21e2
TS4162]
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
|
Original
|
PDF
|
ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
|
EC3H02B
Abstract: No abstract text available
Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .
|
Original
|
PDF
|
ENN6523
EC3H02B
EC3H02B]
S21e2
1006size)
E-CSP1006-3
EC3H02B
|
2sd2635
Abstract: TA-2846
Text: Ordering number:ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions • Motor drivers, hammer drivers, and relay drivers. unit:mm 2064A Features [2SD2635] 2.5 · Darlington connection
|
Original
|
PDF
|
ENN6449
2SD2635
2SD2635]
2sd2635
TA-2846
|
marking YD
Abstract: No abstract text available
Text: Ordering number:ENN6362 N-Channel Silicon MOSFET 3LN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LN02C] 0.5 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain
|
Original
|
PDF
|
ENN6362
3LN02C
3LN02C]
marking YD
|
2097B
Abstract: 2SC4520 FP207 marking 207
Text: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)
|
Original
|
PDF
|
ENN6457
FP207
2097B
FP207]
25max
FP207
2A1729
2097B
2SC4520
marking 207
|
EC3H06B
Abstract: No abstract text available
Text: Ordering number : ENN6524 SANYO Semiconductors DATA SHEET EC3H06B NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).
|
Original
|
PDF
|
ENN6524
EC3H06B
S21e2
11GHz
1006size)
EC3H06B
|
EC3H02B
Abstract: No abstract text available
Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .
|
Original
|
PDF
|
ENN6523
EC3H02B
EC3H02B]
S21e2
1006size)
E-CSP1006-3
EC3H02B
|
|