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    2SA1882

    Abstract: 2SC4984 ITR04972 ITR04973 ITR04974
    Text: Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions • Low-frequency power amplifier applications. · Medium-speed switching. · Small-sized motor drivers.


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    PDF ENN4633A 2SA1882/2SC4984 2SA1882/2SC4984] 25max 2SA1882 2SA1882 2SC4984 ITR04972 ITR04973 ITR04974

    EC3H06B

    Abstract: TA248
    Text: Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions unit:mm 2183 [EC3H06B] 0.15 0.15 0.05 1 2 0.05 3 0.5 1.0 0.4 0.05 0.25 0.35 0.2 0.25 • Low noise : NF=0.9dB typ f=1GHz .


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    PDF ENN6524 EC3H06B EC3H06B] S21e2 11GHz 1006size) E-CSP1006-3 EC3H06B TA248

    K2530

    Abstract: 2SK2530 64063
    Text: Ordering number:ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Low voltage drive. unit:mm 2083B [2SK2530] 2.3 1.5 6.5 5.0 4 0.5 5.5 7.0 Features 1.2


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    PDF ENN6406 2SK2530 2083B 2SK2530] 2092B K2530 2SK2530 64063

    2SJ416

    Abstract: FX856 SB07-03P 53723
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


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    PDF ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, SB07-03P 53723

    2SA1882

    Abstract: 2SC4984 ITR04972 ITR04973
    Text: 2SA1882 / 2SC4984 Ordering number : EN4633B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1882 / 2SC4984 Low-Frequency General-Purpose Amplifier Applications Applications • • • Low-frequency power amplifier applications.


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    PDF 2SA1882 2SC4984 EN4633B 2SA1882 2SC4984 ITR04972 ITR04973

    SDA 5450

    Abstract: SQFP208 CCIR601 LC74981W
    Text: 注文コードNo.N 6 6 7 8 No. N 6 6 7 8 92500 新 LC74981W CMOS LSI LCD-TV用スキャンコンバータLSI で ある。デジタルデコーダ, マイコン, 液晶パネルと組み合わせることにより容易に液晶テレビの映像信号処理回


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    PDF LC74981W LC74981WNTSC/PALXGALSI 480P/480I) SQFP208 SANYOSQFP208 92500TS B8-5554 YIN70 YCbCrCCIR601 SDA 5450 SQFP208 CCIR601 LC74981W

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5436A NPN Epitaxial Planar Silicon Transistor TS4162 VHF Band Low-Noise Amplifier and OSC Applications Package Dimensions • Low noise : NF=1.8dB typ f=150MHz . · High gain : S21e2=16dB typ (f=150MHz). · Ultrasmall package facilitates miniaturization in end


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    PDF ENN5436A TS4162 150MHz) S21e2 TS4162]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


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    PDF ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P,

    EC3H02B

    Abstract: No abstract text available
    Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .


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    PDF ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B

    2sd2635

    Abstract: TA-2846
    Text: Ordering number:ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions • Motor drivers, hammer drivers, and relay drivers. unit:mm 2064A Features [2SD2635] 2.5 · Darlington connection


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    PDF ENN6449 2SD2635 2SD2635] 2sd2635 TA-2846

    marking YD

    Abstract: No abstract text available
    Text: Ordering number:ENN6362 N-Channel Silicon MOSFET 3LN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LN02C] 0.5 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain


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    PDF ENN6362 3LN02C 3LN02C] marking YD

    2097B

    Abstract: 2SC4520 FP207 marking 207
    Text: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)


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    PDF ENN6457 FP207 2097B FP207] 25max FP207 2A1729 2097B 2SC4520 marking 207

    EC3H06B

    Abstract: No abstract text available
    Text: Ordering number : ENN6524 SANYO Semiconductors DATA SHEET EC3H06B NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).


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    PDF ENN6524 EC3H06B S21e2 11GHz 1006size) EC3H06B

    EC3H02B

    Abstract: No abstract text available
    Text: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .


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    PDF ENN6523 EC3H02B EC3H02B] S21e2 1006size) E-CSP1006-3 EC3H02B