Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    90NM CMOS Search Results

    90NM CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    90NM CMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    efuse OTP

    Abstract: schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm
    Text: RFCMOS Case Study: Orca Systems’ 1st-pass Functional Silicon Success with Fujitsu CMOS 90nm Technology “When you’re designing a new type of digital architecture, it’s vital to know that final silicon will match simulation results. The results we got with Fujitsu’s 90nm PDK are


    Original     		SMS-CS-21356-12/2009. efuse OTP schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm PDF

    12v inverter

    Abstract: 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CS101 10-Layer CHIP IPS serdes hsif
    Text: 90nm CMOS Standard Cell CS101 ASIC Series High-performance transistors • Advanced lithography and etch technology to achieve 40nm gate length • Low temperature process for shallow junction • Process optimization for high carrier mobility 9Cu/1Al interconnect


    Original     		CS101 10-layer CS101HU WFS-FS-20164-9/2004 12v inverter 90nm 90nm ROM Etch Microelectronics 90nm cmos CS101SN CHIP IPS serdes hsif PDF

    fujitsu transistor

    Abstract: 90nm CMOS RF circuit and its application RF TRANSISTOR fujitsu ic wireless 65nm lte demodulator CMOS lan transistor
    Text: Fujitsu RF CMOS David Fung Fujitsu Microelectronics America, Inc. November 2008 RF CMOS Announcement Highlights „ „ „ The Fujitsu 65nm and 90nm RF CMOS process technologies Advanced analog and RF device process design kit RF CMOS technology platform for consumer, wireless and


    Original     		PDF

    Flip-chip 1.8V SRAM

    Abstract: 65nm 65nm sram CS200 CS100 CS200A cmos logic 90nm
    Text: 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology.


    Original     		CS200 CS200A CS100 CS200) WFS-FS-21139-9/2005 Flip-chip 1.8V SRAM 65nm 65nm sram CS200A cmos logic 90nm PDF

    4DPA

    Abstract: "network interface cards"
    Text: GIGA090 90nm Single Port Embeddable Gigabit Ethernet Transceiver Data Brief Main features • Fully standards compliant: IEEE 802.3, IEEE 802.3u, IEEE 802.3z and IEEE 802.3ab ■ Advanced Cable Diagnostic Features: – hard fault detection – Inter pair short


    Original     		GIGA090 1000BASE-T 100BASE-TX 100BASETX 10BASE-T GIGA090 4DPA "network interface cards" PDF

    soc toshiba

    Abstract: 90 nm CMOS soc 1044 TC280 B707 cmos logic 90nm 90-nm CMOS standard cell library process technology toshiba transistors selection guide TOSHIBA
    Text: 2003-2 PRODUCT GUIDE BCE0012A 90nm Ldrawn=70nm CMOS ASIC TC300 Family 2003 http://www.semicon.toshiba.co.jp/eng SoC Solution for a Wide Range of UltraHigh-Performance and Ultra-Low-Power Applications TC300 Family Features and Benefits Ultra-High Density and Ultra-Low Power


    Original     		BCE0012A TC300 90-nm 70-nm-drawn F-93561, soc toshiba 90 nm CMOS soc 1044 TC280 B707 cmos logic 90nm 90-nm CMOS standard cell library process technology toshiba transistors selection guide TOSHIBA PDF

    GIGA090

    Abstract: "network interface cards"
    Text: GIGA090 90nm Single Port Embeddable Gigabit Ethernet Transceiver Data Brief Main features • Fully standards compliant: IEEE 802.3, IEEE 802.3u, IEEE 802.3z and IEEE 802.3ab ■ Advanced Cable Diagnostic Features: – hard fault detection – Inter pair short


    Original     		GIGA090 1000BASE-T 100BASE-TX GIGA090 "network interface cards" PDF

    NT5DS32M16CS-5T

    Abstract: NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG
    Text: NT5DS32M16CS NT5DS64M8CS / NT5DS64M8CG NT5DS128M4CS 512Mb DDR SDRAM Feature z DLL aligns DQ and DQS transitions with CK transitions z DDR 512M bit, Die C, based on 90nm design rules z Double data rate architecture: two data transfers per clock cycle


    Original     		NT5DS32M16CS NT5DS64M8CS NT5DS64M8CG NT5DS128M4CS 512Mb NT5DS32M16CS-5T NT5DS64M8CS-5T NT5DS32M16CS nt5ds32m16cs-6k NT5DS64M8CG-5T NT5DS64M8CS-5TI NT5DS128M4CS-5T NT5DS128M4CS-6K DDR400 NT5DS64M8CG PDF

    Untitled

    Abstract: No abstract text available
    Text: NT5DS128M4CG 512Mb DDR SDRAM C-Die Preliminary Features • • • • • CAS Latency and Frequency CAS Latency 3 Maximum Operating Frequency MHz DDR400 (5T) 200 • DDR 512M bit, Die C, based on 90nm design rules • Double data rate architecture: two data transfers per


    Original     		NT5DS128M4CG 512Mb DDR400 PDF

    Pseudo SRAM

    Abstract: No abstract text available
    Text: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64163 Revision History Rev. No. History Issue Date 1.0 Initial issue Jan.19, 2007 1.1 Upgrade wafer process from 0.13um to 90nm Dec. 18, 2009 1 Rev 1.1 Chiplus reserves the right to change product or specification without notice.


    Original     		CS26LV64163 CS26LV64163 150uA 200us Pseudo SRAM PDF

    P1U4GR30CT-G45CA

    Abstract: No abstract text available
    Text: PowerFlash P1U4GR30CT 4G bit AG-AND Flash Memory Rev.1.01 Aug.21.2006 Description The P1U4GR30CT achieves a write speed of 5.6 Mbytes/sec, using 90nm process technology and AG-AND Assist Gate-AND type Flash memory cell using multi level cell technology provides both the most cost effective


    Original     		P1U4GR30CT P1U4GR30CT P1U4GR30CT-G45CA PDF

    CS26LV64173

    Abstract: No abstract text available
    Text: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64173 Revision History Rev. No. 1.0 History Issue Date 1. New Release. Mar.27, 2013 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down DPD 3-2. Partial Array Refresh (PAR)


    Original     		CS26LV64173 CS26LV64173 PDF

    Untitled

    Abstract: No abstract text available
    Text: Intel Pentium® M Processor on 90nm Process with 2-MB L2 Cache Datasheet May 2004 Order Number: 302189-001 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF

    CS26LV64163

    Abstract: cs26lv64163 data
    Text: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64163 Revision History Rev. No. History Issue Date 1.0 Initial issue Jan.19, 2007 1.1 Upgrade wafer process from 0.13um to 90nm Dec.18, 2009 1.2 Add the package dimensions: D2 and E2 Aug.26, 2010 1 Rev 1.2 Chiplus reserves the right to change product or specification without notice.


    Original     		CS26LV64163 CS26LV64163 cs26lv64163 data PDF

    BCM54980

    Abstract: 1000BASE-T 90 nm CMOS 100BASE-FX 90nm cmos
    Text: BCM54980 OCTAL-PORT 10/100/1000BASE-T GIGABIT ETHERNET TRANSCEIVER SUMMARY OF BENEFITS FEATURES • Eight 10BASE-T/100BASE-TX/1000BASE-T Gigabit Ethernet GbE transceivers in a single fully integrated 90-nm CMOS chip • Energy efficient, low-cost, and low-power octal-port


    Original     		BCM54980 10/100/1000BASE-T 10BASE-T/100BASE-TX/1000BASE-T 90-nm BCM54980 54980-PB201-R 1000BASE-T 90 nm CMOS 100BASE-FX 90nm cmos PDF

    CS200

    Abstract: 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring
    Text: 65nm CMOS Standard Cell Leakage Current Large CS200 ASIC Series Server/ Network Low Power Power Low Lineup Lineup CS200LL CS200A HV-Tr DHV-Tr HS-Tr Mo C Mobile STD-Tr STD-Tr LL-Tr Computing High End Server HighHigh Performance Performance Lineup LineupCS200HP


    Original     		CS200 CS200LL CS200A CS200HP CS200 12-layer 10-bit 33MS/s 1110MS/s 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring PDF

    SGMII

    Abstract: BCM54981 100BASE-FX 90-nm BCM5498
    Text: BCM54981 Brief OCTAL-PORT 10/100/1000BASE-T GIGABIT ETHERNET TRANSCEIVER SUMMARY OF BENEFITS FEATURES • Eight 10BASE-T/100BASE-TX/1000BASE-T Gigabit Ethernet transceiver in a fully integrated 90 nm CMOS single chip • Energy efficient, low-cost, and low-power octal-port


    Original     		BCM54981 10/100/1000BASE-T 10BASE-T/100BASE-TX/1000BASE-T 54981-PB00-R SGMII BCM54981 100BASE-FX 90-nm BCM5498 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCM54980 OCTAL-PORT 10/100/1000BASE-T GIGABIT ETHERNET TRANSCEIVER SUMMARY OF BENEFITS FEATURES • Eight 10BASE-T/100BASE-TX/1000BASE-T Gigabit Ethernet Transceiver in a fully integrated 90 nm CMOS single chip • Energy efficient, low-cost, and low-power octal-port integration


    Original     		BCM54980 10/100/1000BASE-T 10BASE-T/100BASE-TX/1000BASE-T 100BASE-FX BCM54980 54980-PB200-R PDF

    180-nm CMOS standard cell library inverter

    Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
    Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents „ „ „ Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006


    Original     		130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201 PDF

    varactor flip chip

    Abstract: CMOS Stacked RF INtermétal
    Text: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media


    Original     		100GHz. WFS-FS-21329-11/2008 varactor flip chip CMOS Stacked RF INtermétal PDF

    Transmeta

    Abstract: 10G CX4 MBF200 "lattice semiconductor" 44 codec MB86V01 mission cyrus 007B FUJITSU FRAM OFDM-256 0.18um structured ASIC
    Text: Fujitsu Microelectronics America, Inc. Executive Briefing Growing Through Innovation and IDM Leadership September 22, 2004 Fujitsu Microelectronics America, Inc. 9/22/04 1 Program • • • • Introduction Emi Igarashi Corporate Overview Ken Iida Products Update


    Original     		MBF200 IDB1394 Transmeta 10G CX4 "lattice semiconductor" 44 codec MB86V01 mission cyrus 007B FUJITSU FRAM OFDM-256 0.18um structured ASIC PDF

    130NM cmos process parameters

    Abstract: 90 nm CMOS C6416 TMS320C6000 TMS320C6416 90nm cmos cmos logic 90nm nmos 130nm
    Text: Chasing Moore’s Law with 90-nm: More Than Just a Process Shrink By Ray Simar, Manager of Advanced DSP Architecture In the electronics industry, the term “process shrink” is often used to refer to when a semiconductor company migrates an existing design to a smaller process technology.


    Original     		90-nm: 720-MHz TMS320C6416 C6416 130-nm 90-nm 130NM cmos process parameters 90 nm CMOS TMS320C6000 90nm cmos cmos logic 90nm nmos 130nm PDF

    hdd spindle motor

    Abstract: hdd motor SoC hdd L7207 eTQFP-64 ST smooth hdd motor controller Hard Disk spindle motor 1. Mobile Computing architecture Hard Disk Drive voice coil ST
    Text: Smart solutions for hard disk drive applications A full portfolio of IP for hard disk drive manufacturers STMicroelectronics, a world leader in hard disk drive HDD and system-on-chip (SOC) solutions, offers a complete intellectual property (IP) portfolio to supply HDD


    Original     		L7207 eTQFP-64 L7208 FLHDD1206 hdd spindle motor hdd motor SoC hdd L7207 eTQFP-64 ST smooth hdd motor controller Hard Disk spindle motor 1. Mobile Computing architecture Hard Disk Drive voice coil ST PDF

    Untitled

    Abstract: No abstract text available
    Text: Mobile Intel Pentium® 4 Processor Supporting Hyper-Threading Technology on 90-nm Process Technology Datasheet September 2004 Document Number: 302424-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY


    Original     		90-nm PDF