9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Contextual Info: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
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O-92A
9014 ch
transistor npn c 9014
9018 transistor
transistor c 9018
9011 9012 9013 9014 9018
100-10L
9018
transistor 9013 NPN audio output
9011
9012 pnp transistor
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Contextual Info: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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KM90II
KM90I5
KM901I/8
KM90II/8
KM90I4
KM9015
KM90I:
KM90i
to-92a
CP1005
9011 9012 9013 9014 9018
C 9014 transistor
transistor 9014 C npn
9011 NPN transistor
9011 transistor
9015 PNP
9016
9013 NPN Output Transistor
transistor npn c 9014
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PDF
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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CL9000
T0-92B
10kfi
9011 9012 9013 9014 9018
9011 NPN transistor
transistor c 9018
npn 9016 transistor
F 9016 transistor
transistor 9014 C npn
C 9014 transistor
9018 transistor
9016 transistor
pnp transistor 9015
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transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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T0-92B
500fi
10kfi
transistor c 9018
Transistor CL 100
9011 9012 9013 9014 9018
transistor 9014 NPN
transistor 9013 NPN audio output
V. 9014 c
9016 transistor
audio output TRANSISTOR NPN 9013
9011 NPN transistor
npn 9016 transistor
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MJE350 b c e
Abstract: Power Transistors TO-126 Case MJE350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
MJE350 b c e
Power Transistors TO-126 Case
MJE350
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8805 VOLTAGE REGULATOR
Abstract: MJE350 b c e MJE350 pnp mje350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
8805 VOLTAGE REGULATOR
MJE350 b c e
MJE350
pnp mje350
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PDF
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BDW94B
Abstract: BDW93C PNP BDW93B BDW93 BDW93C BDW94 BDW94C bdw93c applications DARLINGTON 30A 100V npn Complementary Darlington current Amplifier
Contextual Info: BDW93, BDW94 Series Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 80V (Minimum) - BDW93B, BDW94B 100V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2.0V (Maximum) at IC = 5.0A.
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BDW93,
BDW94
BDW93B,
BDW94B
BDW93C,
BDW94C
BDW94B
BDW93C PNP
BDW93B
BDW93
BDW93C
BDW94C
bdw93c applications
DARLINGTON 30A 100V npn
Complementary Darlington current Amplifier
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BC160
Abstract: BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16
Contextual Info: BC160, 161 PNP Medium Power Transistors Features: • PNP Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. TO-39 Metal Can Package Dimension Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88
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BC160,
BC160
BC161
BC160
BC160-10
BC160-6
BC161-6
BC160-16
BC161
BC161-10
BC161-16
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BD136
Abstract: pnp transistor to126 power transistor bd136
Contextual Info: BD136 TO-126 PNP Transistors Features: • PNP Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)
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BD136
O-126
BD136
pnp transistor
to126
power transistor bd136
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BD140 application circuits circuits
Abstract: bd140 equivalent transistor BD140 bd140 data sheet pin configuration transistor bd140 BD140 circuits data sheet of bd140 transistor BD140 BD140 N 7333 A
Contextual Info: BD140 TO-126 PNP Transistors Features: • PNP Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical)
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BD140
O-126
BD140 application circuits circuits
bd140 equivalent transistor
BD140
bd140 data sheet
pin configuration transistor bd140
BD140 circuits
data sheet of bd140
transistor BD140
BD140 N
7333 A
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2N5416
Abstract: 9016 pnp transistor
Contextual Info: 2N5416 PNP High Voltage Transistors Features: • PNP Silicon High Voltage Transistor. • High speed switching and linear amplifier appliances in Military, Industrial and Commercial Equipment. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39
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2N5416
2N5416
9016 pnp transistor
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PDF
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Darlington transistor
Abstract: ic 9400 transistor Bd682 BD680 BD682
Contextual Info: BD682 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0 3.2 2.5 (Typical) Dimensions : Millimetres
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BD682
O-126
Darlington transistor
ic 9400
transistor Bd682
BD680
BD682
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BD678
Contextual Info: BD678 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0 3.2 2.5 (Typical) Dimensions : Millimetres
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BD678
O-126
BD678
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PDF
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Power Transistors TO-126 Case
Abstract: farnell ic 9400 BD680
Contextual Info: BD680 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0 3.2 2.5 (Typical) Dimensions : Millimetres
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BD680
O-126
Power Transistors TO-126 Case
farnell
ic 9400
BD680
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TBD140
Abstract: TBD136 to126 case
Contextual Info: TBD136, TBD138, TBD140 TO-126 PNP Transistors Features: • PNP Plastic Power Transistors. • Medium Power Linear and Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49
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TBD136,
TBD138,
TBD140
O-126
TBD136
TBD140
TBD136
to126 case
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PDF
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BC327
Abstract: pin configuration Bc337 BC337 BC337 npn pin configuration Bc327 BC33716
Contextual Info: BC327 & BC337 General Purpose Transistors General Description and Suggested Applications: • PNP/NPN Silicon Planar Epitaxial Transistors. • Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers BC327 PNP BC337 NPN TO-92 Plastic Package
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BC327
BC337
BC327
BC337
pin configuration Bc337
BC337 npn
pin configuration Bc327
BC33716
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PDF
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BDW94
Abstract: BDW93C BDW93 BDW93B BDW94B BDW94C BDW93C PNP
Contextual Info: BDW93, BDW94 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - BDW93B, BDW94B = 100V (Minimum) - BDW93C, BDW94C • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 5.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.
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BDW93,
BDW94
BDW93B,
BDW94B
BDW93C,
BDW94C
BDW93B
BDW93C
BDW94
BDW93C
BDW93
BDW93B
BDW94B
BDW94C
BDW93C PNP
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BC858C
Abstract: 2KW sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V
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BC858C
BC858C
2KW sot23
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PDF
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BC858C
Abstract: 65 marking sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V
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BC858C
BC858C
65 marking sot23
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PDF
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tbd680
Abstract: TBD682
Contextual Info: TBD676, 678, 680, 680A, 682 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0
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TBD676,
O-126
TBD676
TBD678
TBD680
TBD680A
TBD682
tbd680
TBD682
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PDF
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MJ4502
Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
Contextual Info: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.
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MJ4502
750mA.
MJ4502
MJ4502 EQUIVALENT
transistor mj4502
A3105
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PDF
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45h11
Abstract: f 45h11 D44H D44H11 D45H D45H11
Contextual Info: D44H11, 45H11 Complementary Power Transistors Complementary Silicon Power Transistors are designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz; series, shunt and switching regulators;
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D44H11,
45H11
D45H11
D44H11
45h11
f 45h11
D44H
D44H11
D45H
D45H11
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PDF
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2n3055 malaysia
Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Contextual Info: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
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2N3055,
MJ2955
400mA.
2N3055
2n3055 malaysia
DC variable power with 2n3055
MJ2955 2n3055 200 watts amplifier
2n3055 pnp
MJ2955 300 watts amplifier
2n3055 IC
2N3055 curve
2N3055
MJ2955 TRANSISTOR
2n3055 collector characteristic curve
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PDF
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TBD438
Abstract: BD433 TBD436 TBD437 434 NPN transistors
Contextual Info: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum
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BD433,
O-126
O-126
TBD433
TBD434
TBD438
BD433
TBD436
TBD437
434 NPN transistors
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PDF
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