8MMX10MM Search Results

Contextual Info: LY62L204916A 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8

AS6C3216

Contextual Info: AS6C3216 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.3 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8 2. Revise VIH max & VIL(min) note on page 4

RF3283

Abstract: DCS1800 GSM900 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150
Contextual Info: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch „ Package 8x10x1.4mm „ GSM900 POUT 33.3dBm „ DCS1800 POUT 32.0dBm „ „ „ „ „ TX_EN 25 VRAMP 26

TXM RX-3

Contextual Info: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch ̈ Package 8x10x1.4mm ̈ GSM900 POUT 33.3dBm ̈ DCS1800 POUT 32.0dBm ̈ Integrated Antenna Switch and

Contextual Info: AS6C3216 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8 2. Revise VIH max & VIL(min) note on page 4

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2004 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

KZ9 sot23

Abstract: KZ5 X kz4 diode KY3 SOT23 KZ7 sot23 KZ3 SOT23 BZX84C BZX84C2V7 BZX84C51 ZENER 5V1 VISHAY
Contextual Info: BZX84C2V7–BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings Tj = 25_C

IS63LV1024LL

Contextual Info: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION 3.3V REVOLUTIONARY PINOUT DECEMBER 2001 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

Contextual Info: ISSI IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DECEMBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

BAV99

Abstract: 8550 sot-23 BAV99 national
Contextual Info: BAV99 Silicon Planar Dual Diode Features D Connected in series Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: ISSI IS61LV5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 2005 FEATURES • High-speed access times: 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

Samsung 0603 capacitor 50v 10 x7r

Abstract: CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2
Contextual Info: ISL8560EVAL2Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note February 13, 2008 AN1324.3 The ISL8560 is a step down DC/DC power switching regulator which accepts a 9V to 60V input, and provides up to 2A of output current. The output voltage can be set

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT OCTOBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

BAW56

Contextual Info: BAW56 TELEFUNKEN Semiconductors Silicon planar dual diode Features D Common anode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward

Contextual Info: LY62L20488A 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Add package “48-ball 8mm x 10mm TFBGA” Revised ORDERING INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice.

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

is63lv1024l-10tli

Abstract: IS63LV1024L IS63LV1024-12KL is63lv1024l-12jl IS63LV1024L-10JLI IS63LV1024 IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-8K
Contextual Info: IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT FEBRUARY 2010 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

IS63LV1024L-8KI

Abstract: IS63LV1024L-8TI IS63LV1024L IS63LV1024L-10JI IS63LV1024L-10TI IS63LV1024L-8BI IS63LV1024L-8JI IS63LV1024LL
Contextual Info: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT JUNE 2002 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

IS63LV1024

Abstract: IS63LV1024-10J IS63LV1024-10T IS63LV1024-8J IS63LV1024-8K IS63LV1024-8T IS63LV1024L
Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT OCTOBER 2003 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

IS63LV1024L

Abstract: IS63LV1024L-10J IS63LV1024L-10T IS63LV1024L-8B IS63LV1024L-8H IS63LV1024L-8J IS63LV1024L-8K IS63LV1024L-8T
Contextual Info: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT AUGUST 2002 FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity

Marking KJD SOT23

Abstract: marking KJD BAW56
Contextual Info: BAW56 Vishay Telefunken Dual Surface Mount Switching Diode Features D Fast switching speed D High conductance D Surface mount package ideally suited for automatic insertion D Common anode 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions

Contextual Info: MMBZ5221BLT1 THRU MMBZ5261BLT1 SILICON PLANAR ZENER DIODES Low Voltage General Purpose Voltage Regulator Diodes SOT-23 Plastic Package 3 1 CATHODE ANODE Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Working Voltage Range Working Voltage Tolerance

IS61LV5128-10KI

Abstract: IS61LV5128-10BI IS61LV5128-10TI IS61LV5128-12BI IS61LV5128-12KI IS61LV5128-12TI IS61LV5128-15KI IS61LV5128
Contextual Info: ISSI IS61LV5128 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE