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    8MMX10MM Search Results

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    8MMX10MM Price and Stock

    Pulse Electronics Corporation PA2247.223NLT

    Power Inductors - SMD 22 uH 16 A 20 % Shielded DCR=15.8 mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PA2247.223NLT Reel 450 150
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    • 1000 $2.65
    • 10000 $2.65
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    Eaton Corporation HCM1A1105V2-100-R

    Power Inductors - SMD 10 UH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI HCM1A1105V2-100-R Reel 500
    • 1 -
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    • 100 -
    • 1000 $0.84
    • 10000 $0.76
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    Eaton Corporation HCM1A1104V2-220-R

    Power Inductors - SMD 22 UH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI HCM1A1104V2-220-R Reel 500
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    • 100 -
    • 1000 $0.78
    • 10000 $0.71
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    8MMX10MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LY62L204916A 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8


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    PDF LY62L204916A 2048K 8mmx10mm. SRA-55SLT LY62L204916AGL-70SLT LY62L204916AGL-70SLI LY62L204916AGL-55SL LY62L204916AGL-70SLIT

    AS6C3216

    Abstract: No abstract text available
    Text: AS6C3216 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.3 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8 2. Revise VIH max & VIL(min) note on page 4


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    PDF AS6C3216 2048K 8mmx10mm. AS6C3216-55BINTR 48-ball AS6C3216

    RF3283

    Abstract: DCS1800 GSM900 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150
    Text: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch „ Package 8x10x1.4mm „ GSM900 POUT 33.3dBm „ DCS1800 POUT 32.0dBm „ „ „ „ „ TX_EN 25 VRAMP 26


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    PDF RF3283 GSM900/DCS1800 8mmx10mm) 8x10x1 GSM900 DCS1800 DS071010 RF3283 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150

    TXM RX-3

    Abstract: No abstract text available
    Text: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch ̈ Package 8x10x1.4mm ̈ GSM900 POUT 33.3dBm ̈ DCS1800 POUT 32.0dBm ̈ Integrated Antenna Switch and


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    PDF RF3283 GSM900/DCS1800 8mmx10mm) 8x10x1 GSM900 DCS1800 DS071010 TXM RX-3

    Untitled

    Abstract: No abstract text available
    Text: AS6C3216 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8 2. Revise VIH max & VIL(min) note on page 4


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    PDF AS6C3216 2048K 8mmx10mm. AS6C3216-55BINTR 48-ball

    Untitled

    Abstract: No abstract text available
    Text: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2004 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for


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    PDF IS63LV1024 IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm)

    KZ9 sot23

    Abstract: KZ5 X kz4 diode KY3 SOT23 KZ7 sot23 KZ3 SOT23 BZX84C BZX84C2V7 BZX84C51 ZENER 5V1 VISHAY
    Text: BZX84C2V7BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings Tj = 25_C


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    PDF BZX84C2V7 BZX84C51 D-74025 01-Apr-99 KZ9 sot23 KZ5 X kz4 diode KY3 SOT23 KZ7 sot23 KZ3 SOT23 BZX84C BZX84C51 ZENER 5V1 VISHAY

    IS63LV1024LL

    Abstract: No abstract text available
    Text: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION 3.3V REVOLUTIONARY PINOUT DECEMBER 2001 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for


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    PDF IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm) IS63LV1024LL 072-word

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DECEMBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for


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    PDF IS63LV1024 IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm)

    BAV99

    Abstract: 8550 sot-23 BAV99 national
    Text: BAV99 Silicon Planar Dual Diode Features D Connected in series Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


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    PDF BAV99 8mmx10mmx0 12-Dec-94 D-74025 BAV99 8550 sot-23 BAV99 national

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 2005 FEATURES • High-speed access times: 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


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    PDF IS61LV5128AL 36-pin 400-mil 44-pin IS61LV5128AL 288-word

    Samsung 0603 capacitor 50v 10 x7r

    Abstract: CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2
    Text: ISL8560EVAL2Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note February 13, 2008 AN1324.3 The ISL8560 is a step down DC/DC power switching regulator which accepts a 9V to 60V input, and provides up to 2A of output current. The output voltage can be set


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    PDF ISL8560EVAL2Z: AN1324 ISL8560 100kHz 600kHz ISL8560EVAL2Z Samsung 0603 capacitor 50v 10 x7r CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2

    Untitled

    Abstract: No abstract text available
    Text: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT OCTOBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for


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    PDF IS63LV1024 IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm)

    BAW56

    Abstract: No abstract text available
    Text: BAW56 TELEFUNKEN Semiconductors Silicon planar dual diode Features D Common anode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward


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    PDF BAW56 8mmx10mmx0in D-74025 BAW56

    Untitled

    Abstract: No abstract text available
    Text: LY62L20488A 2048K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Add package “48-ball 8mm x 10mm TFBGA” Revised ORDERING INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice.


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    PDF LY62L20488A 2048K 48-ball LY62L20488A 216-bit LY62L20488AML-55SLT LY62L20488AML-55SL LY62L20488AGL-70SLIT

    SST39WF160x

    Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
    Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb


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    PDF AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF SST39WF160x AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP

    is63lv1024l-10tli

    Abstract: IS63LV1024L IS63LV1024-12KL is63lv1024l-12jl IS63LV1024L-10JLI IS63LV1024 IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-8K
    Text: IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT FEBRUARY 2010 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


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    PDF IS63LV1024 IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm) is63lv1024l-10tli IS63LV1024L IS63LV1024-12KL is63lv1024l-12jl IS63LV1024L-10JLI IS63LV1024 IS63LV1024-10J IS63LV1024-10K IS63LV1024-10T IS63LV1024-8K

    IS63LV1024L-8KI

    Abstract: IS63LV1024L-8TI IS63LV1024L IS63LV1024L-10JI IS63LV1024L-10TI IS63LV1024L-8BI IS63LV1024L-8JI IS63LV1024LL
    Text: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT JUNE 2002 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


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    PDF IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm) IS63LV1024LL 072-word IS63LV1024L-8KI IS63LV1024L-8TI IS63LV1024L IS63LV1024L-10JI IS63LV1024L-10TI IS63LV1024L-8BI IS63LV1024L-8JI

    IS63LV1024

    Abstract: IS63LV1024-10J IS63LV1024-10T IS63LV1024-8J IS63LV1024-8K IS63LV1024-8T IS63LV1024L
    Text: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT OCTOBER 2003 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for


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    PDF IS63LV1024 IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm) IS63LV1024 IS63LV1024-10J IS63LV1024-10T IS63LV1024-8J IS63LV1024-8K IS63LV1024-8T IS63LV1024L

    IS63LV1024L

    Abstract: IS63LV1024L-10J IS63LV1024L-10T IS63LV1024L-8B IS63LV1024L-8H IS63LV1024L-8J IS63LV1024L-8K IS63LV1024L-8T
    Text: ISSI IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT AUGUST 2002 FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


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    PDF IS63LV1024L 32-pin 300-mil 400-mil 36-pin 8mmx10mm) IS63LV1024L IS63LV1024L-10J IS63LV1024L-10T IS63LV1024L-8B IS63LV1024L-8H IS63LV1024L-8J IS63LV1024L-8K IS63LV1024L-8T

    Marking KJD SOT23

    Abstract: marking KJD BAW56
    Text: BAW56 Vishay Telefunken Dual Surface Mount Switching Diode Features D Fast switching speed D High conductance D Surface mount package ideally suited for automatic insertion D Common anode 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions


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    PDF BAW56 substrate10mmx8mmx0 8mmx10mmx0 D-74025 17-Mar-99 Marking KJD SOT23 marking KJD BAW56

    Untitled

    Abstract: No abstract text available
    Text: MMBZ5221BLT1 THRU MMBZ5261BLT1 SILICON PLANAR ZENER DIODES Low Voltage General Purpose Voltage Regulator Diodes SOT-23 Plastic Package 3 1 CATHODE ANODE Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Working Voltage Range Working Voltage Tolerance


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    PDF MMBZ5221BLT1 MMBZ5261BLT1 OT-23 8mmx10mmx0 MMBZ5257 MMBZ5258 MMBZ5259 MMBZ5260 MMBZ5261

    IS61LV5128-10KI

    Abstract: IS61LV5128-10BI IS61LV5128-10TI IS61LV5128-12BI IS61LV5128-12KI IS61LV5128-12TI IS61LV5128-15KI IS61LV5128
    Text: ISSI IS61LV5128 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


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    PDF IS61LV5128 36-pin 400-mil 44-pin IS61LV5128 288-word inn28-12K IS61LV5128-12T IS61LV5128-10KI IS61LV5128-10BI IS61LV5128-10TI IS61LV5128-12BI IS61LV5128-12KI IS61LV5128-12TI IS61LV5128-15KI