8A 244 Search Results

LTM4613V

Abstract: LTM4613MPV LTM4613 LTM4613EV LTM4613IV EN55022B JESD51-12 10k resistor array SIP GRM32ER71H106K LTM4613EV#PBF
Contextual Info: LTM4613 EN55022B Compliant 36VIN, 15VOUT, 8A, DC/DC µModule Regulator DESCRIPTION FEATURES Complete Low EMI Switch Mode Power Supply EN55022 Class B Compliant Wide Input Voltage Range: 5V to 36V 8A Output Current 3.3V to 15V Output Voltage Range Low Input and Output Referred Noise

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: LTM4613 EN55022B Compliant 36VIN, 15VOUT, 8A, DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Complete Low EMI Switch Mode Power Supply EN55022 Class B Compliant Wide Input Voltage Range: 5V to 36V 8A Output Current 3.3V to 15V Output Voltage Range

TBU4005

Abstract: TBU6005
Contextual Info: TBU 4A/6A/8A SERIES REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4 / 6 / 8 Amperes SILICON BRIDGE RECTIFIERS TBU FEATURES .935 23.7 .895(22.7) ●Surge overload rating -150~200 amperes peak ●Ideal for printed circuit board .15? X23L (3.8? X5.7L)

Contextual Info: CLD-DS51 Rev 8A Product family data sheet ® Cree XLamp XP-G2 LEDs Product Description FEATURES Table of Contents The XLamp XP-G2 LED builds on the • Available in white, outdoor Characteristics. 2 unprecedented performance of the

Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®

Contextual Info: GE Data Sheet KHHD010A0A Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 5.0Vdc, 8A/10A Output RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

Lineage Power Systems

Abstract: 10A0A xed 2013
Contextual Info: GE Data Sheet KHHD010A0A Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 5.0Vdc, 8A/10A Output RoHS Compliant Applications • Wireless Networks • Hybrid power architectures  Optical and Access Network Equipment  Enterprise Networks including Power over Ethernet PoE

111B 1.2G

Abstract: transistor ps35 pwm INVERTER 3 phase 400 hz BK P96 DA1273
Contextual Info: REJ09B0385-0100 M32C/8A Group 16/32 Hardware Manual RENESAS MCU M16C FAMILY / M32C/80 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

APT1201R6BVR

Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

RDHX223K302HKT

Abstract: RDHX333K302HKT KHHD010A0A41Z 202S48W334KT Latch Over current Protection Canadian General Electric Company
Contextual Info: GE Data Sheet KHHD010A0A Hammerhead Series; DC-DC Converter Power Modules 18-75Vdc Input; 5.0Vdc, 8A/10A Output Features • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Ultra-wide Input Voltage Range, 18Vdc to 75Vdc  No minimum load 

UL1354

Abstract: U217 XHHW-2 M4253
Contextual Info: 488-2012:QuarkCatalogTempNew 8/22/12 5:33 PM Page 488 TEST & MEASUREMENT 3 Coaxial Cable Coaxial Cable 9059C OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES WIRE & CABLE Mfr.’s Type Inner Conductor RG Type Ohms M4182*† M4201*†‡ 9008A† 6/U 8A/U

8N80

Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
Contextual Info: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

L498A

Abstract: 8a7a BT497AKHF160 SC-117 JEDEC BT498AKHF240 498A 6903 controller 62642 Bt498 IR 9624
Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Bt497A/498A 240 MHz Monolithic CMOS Triple 1K x 8 RAMDAC The Bt497A/8A is designed specifically for high-performance, high-resolution color

APT1201R6BVR

Abstract: APT1201R6SVR
Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1001R6SFLL

Abstract: APT1001R6BFLL
Contextual Info: APT1001R6BFLL APT1001R6SFLL 8A 1.60Ω 1000V POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

8n80

Contextual Info: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V

TBU6

Abstract: TBU6005 TBU4005 TBU606
Contextual Info: TBU 4A/6A/8A SERIES REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4 / 6 / 8 Amperes SILICON BRIDGE RECTIFIERS TBU FEATURES .177 4.5 *45° ●Surge overload rating -150~200 amperes peak ●Ideal for printed circuit board .935(23.7) .895(22.7) ●Reliable low cost construction utilizing

Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: Preliminary Data Sheet VDSS TM HiPerFET Power MOSFETs IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

4435 mosfet

Abstract: Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m
Contextual Info: APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , D RDS ON =16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D D D S Super High Dense Cell Design

Contextual Info: APT1201R6BVFR APT1201R6SVFR 8A 1.600Ω 1200V POWER MOS V FREDFET BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1001R6BLL

Abstract: APT1001R6SLL
Contextual Info: APT1001R6BLL APT1001R6SLL 1000V 8A 1.60Ω R POWER MOS 7 BLL MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

845n-2c-c

Abstract: 845hn-2c-c 845H-2A-C 845H-1C-C 845H-1A-C 845H-2C-C 845-2C-V 845N-2C-S 845HN-1A-C 845HN
Contextual Info: SONG CHUAN 845 Features ϭ Low cost and low profile miniature PCB Relays. ϭ UL/CUL, TUV approved. ϭ High rating 12A SPDT, 8A DPDT. ϭ 3.5mm & 5mm pinning are both available. ϭ Standard coil 700mW and high sensitivity coil 530mW. ϭ SPNC, SPNO, SPDT, DPNO, DPNC, DPDT contact