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    8901E Search Results

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    8408901EA Texas Instruments Quadruple D-type Flip-Flops With Clear 16-CDIP -55 to 125 Visit Texas Instruments Buy
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    Texas Instruments TPS7A8901EVM-853

    EVAL BOARD FOR TPS7A89
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    DigiKey TPS7A8901EVM-853 Bulk 4 1
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    Analog Devices Inc 5962-8778901EA

    IC DAC 8BIT V-OUT 16CERDIP
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    DigiKey 5962-8778901EA Tube 3 1
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    Richardson RFPD 5962-8778901EA 1
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    Texas Instruments 8408901EA

    QUADRUPLE D-TYPE FLIP-FLOPS WITH
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    Bristol Electronics 8408901EA 56 1
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    Tripp Lite SB58901EFB

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    Tripp Lite SB58901EAL

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    8901E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI8901EDB

    Abstract: No abstract text available
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		PDF Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04

    Untitled

    Abstract: No abstract text available
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11

    SI8901

    Abstract: J-STD-020A Si8901EDB
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		PDF Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A

    Bi-Directional P-Channel mosfet

    Abstract: SI8901 Si8901EDB
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 18-Jul-08 Bi-Directional P-Channel mosfet SI8901

    SI8901

    Abstract: No abstract text available
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E Si8901EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8901

    SI8901

    Abstract: J-STD-020A Si8901EDB MARKING G2
    Text: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		PDF Si8901EDB 8901E 08-Apr-05 SI8901 J-STD-020A MARKING G2