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TDK Electronics B41888C5158M000 CAP ALUM 1500UF 20% 25V RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B41888C5158M000	Bulk	10,081		1	1 $1.6 10 $1.018 100 $1.6 1000 $0.54652 10000 $0.49325	Buy Now
Newark	B41888C5158M000	Bulk	1,933		1	1 $0.461 10 $0.461 100 $0.461 1000 $0.461 10000 $0.461	Buy Now
TME	B41888C5158M000				3,000	1 - 10 - 100 - 1000 - 10000 $0.587	Get Quote
TDK Electronics B43888C5106M000 CAP ALUM 10UF 20% 450V RADIAL TH
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DigiKey	B43888C5106M000	Bulk	4,128		1	1 $2.37 10 $1.54 100 $2.37 1000 $0.89496 10000 $0.82388	Buy Now
TDK Electronics B41888C5188M000 CAP ALUM 1800UF 20% 25V RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B41888C5188M000	Bulk	2,184		1	1 $2.1 10 $1.358 100 $2.1 1000 $0.75403 10000 $0.7055	Buy Now
Newark	B41888C5188M000	Bulk	2,902		1	1 $1.41 10 $1.09 100 $0.867 1000 $0.753 10000 $0.753	Buy Now
TDK Electronics B41888C5338M000 CAP ALUM 3300UF 20% 25V RADIAL
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DigiKey	B41888C5338M000	Bulk	2,154		1	1 $2.68 10 $1.766 100 $2.68 1000 $1.10987 10000 $1.10987	Buy Now
Newark	B41888C5338M000	Bulk	2,377		1	1 $2.23 10 $1.72 100 $1.31 1000 $1.3 10000 $1.3	Buy Now
TDK Electronics B41888C5477M000 CAP ALUM 470UF 20% 25V RADIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B41888C5477M000	Bulk	1,686		1	1 $0.87 10 $0.539 100 $0.3621 1000 $0.26837 10000 $0.23027	Buy Now
Newark	B41888C5477M000	Bulk	21,009		10	1 - 10 $0.464 100 $0.379 1000 $0.315 10000 $0.315	Buy Now
TME	B41888C5477M000				12,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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88C5 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
88C50-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C51-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C52-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C53-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C54-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C5500	Marvell	PRML Read Channel Physical Layer Device	Original	PDF
88C55-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C56-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C57-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C58-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF
88C59-AF5-R	Unisonic Technologies	BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR	Original	PDF

88C5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
88C5200 Abstract: 88C5520 marvell read channel "read channel" Marvell marvell viterbi 88C4200 marvell HARD DISK marvell "read channel" hard disk read channel Text: HighPHY Family 88C5500 and 88C5520 PRML Read Channel Physical Layer Devices Data Rates Up to 1.2 Gb/s, Combined with Target-Morphing™ Digital Signal Processing Technology, Enable Next-Generation Storage Solutions PRML Read Channel Physical Layer Devices	Original	88C5500 88C5520 88C5520 88C5200 marvell read channel "read channel" Marvell marvell viterbi 88C4200 marvell HARD DISK marvell "read channel" hard disk read channel	PDF
Intel Stacked CSP Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160 Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology	Original	28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160	PDF
8E89 Abstract: No abstract text available Text: お使いになる前に取扱説明書基本操作電話をかける／受ける文字入力電話帳メール音・表示・照明の設定カレンダーセキュリティ便利な機能ウィルコムの各種サービスデータフォルダ	Original		PDF
CR10 Abstract: M58LR128HB M58LR128HT VFBGA56 Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56	PDF
M36L0T7050T2 Abstract: M58LT128HB M58LT128HT M36L0t7050 Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM	Original	M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050	PDF
28F008C3 Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces	Original	32-MBIT 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 64-KB 28F008C3 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode	PDF
ISL9504 Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5 Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS	Original		PDF
SOT23-5 AE31 Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450 Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS	Original		PDF
Untitled Abstract: No abstract text available Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB	PDF
rc28F640C3TC90 Abstract: intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3 Text: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming	Original	28F800C3, 28F160C3, 28F320C3, 28F640C3 32Kword rc28F640C3TC90 intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3	PDF
Intel flash memory 292215 Abstract: 8891 AP-658 88C0 88C1 88C2 88C3 88C4 88C5 AP-657 Text: E AP-658 APPLICATION NOTE Designing for Upgrade to the 3 Volt Advanced+ Boot Block Flash Memory December 1998 NOTE: This document formerly known as Designing for Upgrade to the Advanced+ Boot Block Flash Memory. Order Number: 292216-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or	Original	AP-658 28F800C3, 28F160C3, 28F320C3 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3 AP-657 Intel flash memory 292215 8891 AP-658 88C0 88C1 88C2 88C3 88C4 88C5	PDF
117h68 Abstract: CR10 J-STD-020B Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers	Original	M30L0R7000T1 M30L0R7000B1 54MHz 117h68 CR10 J-STD-020B	PDF
M36L0T7060B Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7 Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory	Original	M36L0T7060T2 M36L0T7060B2 M36L0T7060T2: 88C4h M36L0T7060B2: 88C5h M36L0T7060B M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7	PDF
88C0 Abstract: 88C1 88C2 88C3 88C4 88C5 AP-658 29221* intel Text: E AP-658 APPLICATION NOTE Designing for Upgrade to the Advanced+ Boot Block Flash Memory May 1998 Order Number: 292216-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of	Original	AP-658 16-Mbit 32-Mbit 88C0 88C1 88C2 88C3 88C4 88C5 AP-658 29221* intel	PDF

CR10 Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56 Text: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers	Original	M58LR128GT M58LR128GB 54MHz CR10 J-STD-020B M58LR128GB M58LR128GT VFBGA56	PDF
28F3202C3 Abstract: 29066 Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 16-Mbit Flash + 4-Mbit SRAM - 28F1604C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 32-Mbit Flash + 2-Mbit SRAM - 28F3202C3 ! Flash Memory Plus SRAM	Original	16-Mbit 28F1602C3 32-Mbit 28F3204C3 28F1604C3 28F3202C3 16-Mb 32-Mb 28F3202C3 29066	PDF
29064 Abstract: No abstract text available Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  12 V for Fast Production Programming High Performance  2.7 V–3.6 V: 90 ns Max Access Time	Original	28F800C3, 28F160C3, 28F320C3 32-Kword 29064	PDF
29066 Abstract: No abstract text available Text: 3 Volt Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology	Original	28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 16-Mbit 32-Mbit 32-Mbit/8-Mbit 32-Mbit/4-Mbit, 29066	PDF
Hardlock Abstract: No abstract text available Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout	Original	3372E Hardlock	PDF
bsc 60h Abstract: AT49BV320C AT49BV320CT SA70 3372A Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout	Original		PDF
Micron MT2 cmos Abstract: 51240 jeida dram 88 pin DU35 Micron MT2 Text: M T24D 88C51240 512K x 40. 1 MEG x 20 IC DRAM CARD \|V llC = R O N IC DRAM CARD 2 MEGABYTES 512K x 40, 1 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card • Polarized receptacle connector • Industry standard DRAM functions and timing	OCR Scan	88C51240 88-pin Micron MT2 cmos 51240 jeida dram 88 pin DU35 Micron MT2	PDF
29064 Abstract: No abstract text available Text: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier	OCR Scan	28F800C3, 28F160C3, 28F320C3 64-KB Consump001 28F160C3 29064	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 2.7 V or 1.65 V I/O Option Reduces Overall System Power	OCR Scan	32-MBIT 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 64-KB	PDF
te28f160 Abstract: t28f160 Text: intei PRELIMINARY 2.4 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C2, 28F160C2, 28F320C2 x16 Flexible SmartVoltage Technology — 2.4 V-3.0 V Read/Program/Erase — 2.4 V or 1.65 V I/O Option Reduces Overall System Power — 12 V for Fast Production Programming	OCR Scan	28F800C2, 28F160C2, 28F320C2 64-KB Consumptio001 28F160C2 te28f160 t28f160	PDF

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88C5 Price and Stock

TDK Electronics B41888C5158M000

TDK Electronics B43888C5106M000

TDK Electronics B41888C5188M000

TDK Electronics B41888C5338M000

TDK Electronics B41888C5477M000

88C5 Datasheets (11)

88C5 Datasheets Context Search

88C5200

Intel Stacked CSP

8E89

CR10

M36L0T7050T2

28F008C3

ISL9504

SOT23-5 AE31

Untitled

rc28F640C3TC90

Intel flash memory 292215

117h68

M36L0T7060B

88C0

CR10

28F3202C3

29064

29066

Hardlock

bsc 60h

Micron MT2 cmos

29064

Untitled

te28f160