875* INTEL Search Results
875* INTEL Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
EN80C188XL-20 |
![]() |
80C188XL - MPU Intel 186 CISC 16-Bit |
![]() |
![]() |
|
TPS62134CRGTT |
![]() |
17-V Input, Step-down Converter with Low Power Mode Input for Intel SkyLake Platform 16-VQFN -40 to 85 |
![]() |
![]() |
|
TPS51624RSMR |
![]() |
4.5V to 28V, 1/2-Phase Step-Down Driverless Controller for Intel VR12.6 CPUs 32-VQFN -40 to 105 |
![]() |
![]() |
|
TPS51624RSMT |
![]() |
4.5V to 28V, 1/2-Phase Step-Down Driverless Controller for Intel VR12.6 CPUs 32-VQFN -40 to 105 |
![]() |
![]() |
|
TPS62134DRGTR |
![]() |
17-V Input, Step-down Converter with Low Power Mode Input for Intel SkyLake Platform 16-VQFN -40 to 85 |
![]() |
![]() |
875* INTEL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
multipoint abb temperature controller
Abstract: cnet abb 2PAA101137 800xa modular plug RJ45 rj45 to 9pin serial abb 64 PIN plug abb s800 S800 S900
|
Original |
800xA 800xA multipoint abb temperature controller cnet abb 2PAA101137 modular plug RJ45 rj45 to 9pin serial abb 64 PIN plug abb s800 S800 S900 | |
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability |
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2011/65/EU 2002/95/EC. | |
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability |
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 11-Mar-11 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
|
Original |
TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6501 TSHA6503 TSHA6500 | |
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability |
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 18-Jul-08 | |
TSHA5202Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
Original |
TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 11-Mar-11 TSHA5202 | |
Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
Original |
TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 2011/65/EU 2002/95/EC. | |
Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability |
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2002/95/EC. 2011/65/EU. | |
TSHA6203
Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
|
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 11-Mar-11 TSHA6203 TSHA620 TSHA6200 TSHA6201 TSHA6202 | |
Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability |
Original |
TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSHA5203Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
Original |
TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 18-Jul-08 TSHA5203 | |
TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
|
Original |
TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6503 TSHA650 TSHA6500 TSHA6501 TSHA6502 | |
TSHA6202
Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode
|
Original |
TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 18-Jul-08 TSHA6202 TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode | |
Contextual Info: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
Original |
TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 2002/95/EC. 2011/65/EU. | |
|
|||
TSTA7100Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7100 2002/95/EC 2002/96/EC TSTA7100 11-Mar-11 | |
INFRARED EMITTING DIODE TO18Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 INFRARED EMITTING DIODE TO18 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
Original |
TSHA6500 2002/96/EC 200/95/EC TSHA6500 11-Mar-11 | |
Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
Original |
TSHA6500 2002/96/EC 200/95/EC TSHA6500 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSHA5202
Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5203
|
Original |
TSHA5200, TSHA5201, TSHA5202, TSHA5203 2002/95/EC 2002/96/EC TSHA520. 11-Mar-11 TSHA5202 TSHA520 TSHA5200 TSHA5201 TSHA5203 | |
Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 11-Mar-11 | |
TSTA7100Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7100 2002/95/EC 2002/96/EC TSTA7100 18-Jul-08 | |
Contextual Info: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity |
Original |
TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A |