pioneer mosfet
Abstract: AVNET Cross Reference MOSFET 818 ln avnet pioneer ic
Text: - " r r p c i A DISTRIBUTOR AND WORLDWIDE SALES OFFICES AUTHORIZED NORTH AMERICAN DISTRIBUTORS UNITED STATES: ALABAMA Huntsville Future E lectro n ics. 205 830-2322 Hall-Mark Electronics .(205)837-8700
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IRL2203N equivalent
Abstract: ap 437 5V voltage regulator namics UCC1837
Text: UCCI 837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex
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UCC2837
UCC3837
UCC3837
100ns
200mA
IRL2203N equivalent
ap 437
5V voltage regulator
namics
UCC1837
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*f6p02
Abstract: NTMS4700NR2
Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 12 6.5 2 NTMD6N02 Max Rating Config. Page No. D 758
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NTMD2P01
NTMS10P02
NTMS5P02
NTMD6P02
MMSF3P028*
NTMD6N02
NTMS4N01
MMDF3N02HD
NTMS4503N
NTMS4700NR2
*f6p02
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UCC1837
Abstract: No abstract text available
Text: y U IM IT R O D E UCC1837 UCC2837 UCC3837 PRELIMINARY FEATURES DESCRIPTION • On Board Charge Pump to Drive External N-MOSFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout Voltage The UCC3837 Linear Regulator Controller includes all the features required for an ex
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UCC1837
UCC2837
UCC3837
UCC3837
100ns
200mA
001b24a
UCC1837
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Untitled
Abstract: No abstract text available
Text: IRLS640A Advanced Power MOSFET FEATURES BVdss = 200 V • Logic Level Gate Drive ■ Avalanche Rugged Technology RDS on = 0.18 ■ Rugged Gate Oxide Technology In = 9.8 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area
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IRLS640A
O-220F
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250M
Abstract: JS-50
Text: IRLR120/121 IRLU120/121 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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IRLR120/121
IRLU120/121
IRLR120/U120
IRLR121/U121
IRLR120/12
7Tb4142
DEcI37fi
250M
JS-50
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IRFIP450
Abstract: CD 834 AN972
Text: PD-9.645A International ü * l Rectifier IRFIP450 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package !solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating
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IRFIP450
O-247
UL1012.
AN972
150KQ
CD 834
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for
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MRF281SR1
MRF281ZR1
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MRF281Z
Abstract: motorola j117
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for
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MRF281SR1
MRF281ZR1
MRF281Z
motorola j117
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837 mosfet
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE FS30KM-06 OUTLINE DRAWING Dimensions in mm • 10V D R IV E • V dss . • TDS ON (M AX ) .
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FS30KM-06
O-220FN
837 mosfet
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Ni200
Abstract: MRF281Z
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for
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Characteri11
MRF281SR1
MRF281ZR1
Ni200
MRF281Z
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motorola j117
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation
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MRF281SR1
MRF281ZR1
motorola j117
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Untitled
Abstract: No abstract text available
Text: Analog Power AMA423P P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • 2mm x 2mm footprint DFN package • RDS rated at 1.8V Gate-drive VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 42 @ VGS = -4.5V 57 @ VGS = -2.5V
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AMA423P
DS-AMA423P-2010-rev4
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Untitled
Abstract: No abstract text available
Text: DRV8837 www.ti.com SLVSBA4 – JUNE 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control
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DRV8837
DRV8837
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Untitled
Abstract: No abstract text available
Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN2A03E6
OT23-6
OT23-6
ZXMN2A03E6TA
ZXMN2A03E6TC
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Untitled
Abstract: No abstract text available
Text: DRV8837 www.ti.com SLVSBA4A – JUNE 2012 – REVISED AUGUST 2012 LOW-VOLTAGE H-BRIDGE IC Check for Samples: DRV8837 FEATURES DESCRIPTION • The DRV8837 provides an integrated motor-driver solution for cameras, consumer products, toys, and other low-voltage or battery-powered motion-control
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DRV8837
120-nA
DRV8837
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ZXMN2A03E6
Abstract: ZXMN2A03E6TA ZXMN2A03E6TC
Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN2A03E6
OT23-6
OT23-6
ZXMN2A03E6TA
ZXMN2A03E6TC
ZXMN2A03E6
ZXMN2A03E6TA
ZXMN2A03E6TC
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Untitled
Abstract: No abstract text available
Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN2A03E6
OT23-6
OT23-6
ZXMN2A03E6TA
ZXMN2A03E6TC
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Untitled
Abstract: No abstract text available
Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN2A03E6
OT23-6
OT23-6
ZXMN2A03E6TA
ZXMN2A03E6TC
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS UC1706 UC2706 UC3706 U N IT R G D E Dual Output Driver DESCRIPTION FEATURES The UC1706 family of output drivers are made with a high-speed Schottky process to interlace between low-level control functions and highpower switching devices - particularly power MOSFET’s. These devices
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UC1706
UC2706
UC3706
UC1706
40nsec
1000pF
UC3611
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j117 motorola
Abstract: motorola j117
Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station
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MRF281/D
MRF281SR1
MRF281ZR1
MRF281/D
j117 motorola
motorola j117
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75NF30
Abstract: stw75nf30 JESD97
Text: STW75NF30 N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID pW STW75NF30 300 V < 0.045 Ω 60 A 320 W • Exceptional dv/dt capability ■ Low gate charge ■ 100% Avalanche tested 2 1 Application
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STW75NF30
O-247
75NF30
stw75nf30
JESD97
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mosfet 4496
Abstract: MRF281ZR1 741 datasheet motorola MRF281SR1 motorola 947 rf power 4496 mosfet motorola j117 MRF281Z
Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station
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MRF281/D
MRF281SR1
MRF281ZR1
MRF281SR1
mosfet 4496
MRF281ZR1
741 datasheet motorola
motorola 947 rf power
4496 mosfet
motorola j117
MRF281Z
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200S
Abstract: MRF281SR1 MRF281ZR1 mosfet 4496 741 motorola
Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station
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MRF281/D
MRF281SR1
MRF281ZR1
MRF281SR1
200S
MRF281ZR1
mosfet 4496
741 motorola
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