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    MRF281SR1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF281SR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF281SR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF281SR1 Freescale Semiconductor RF PWR FET Original PDF
    MRF281SR1 Motorola RF Power Field Effect Transistor Original PDF

    MRF281SR1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    741 datasheet motorola

    Abstract: MRF281ZR1 motorola j117 200S MRF281SR1 J117 MOSFET mosfet 4496 Ni200 NI-200Z
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 741 datasheet motorola MRF281ZR1 motorola j117 200S J117 MOSFET mosfet 4496 Ni200 NI-200Z

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281 MRF281SR1 MRF281ZR1 MRF281SR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF281 Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281 MRF281SR1 MRF281ZR1

    mosfet 4496

    Abstract: MRF281ZR1 741 datasheet motorola MRF281SR1 motorola 947 rf power 4496 mosfet motorola j117 MRF281Z
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 mosfet 4496 MRF281ZR1 741 datasheet motorola motorola 947 rf power 4496 mosfet motorola j117 MRF281Z

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF281 Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281 MRF281SR1 MRF281ZR1

    j117 motorola

    Abstract: motorola j117
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281/D j117 motorola motorola j117

    200S

    Abstract: MRF281 MRF281SR1 MRF281ZR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 5, 5/2006 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281 MRF281SR1 MRF281ZR1 MRF281SR1 200S MRF281 MRF281ZR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281SR1 MRF281ZR1

    MRF281Z

    Abstract: motorola j117
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281SR1 MRF281ZR1 MRF281Z motorola j117

    200S

    Abstract: EB212 MRF281 MRF281SR1 MRF281ZR1 PCN13420 MRF281Z PCN13232
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281SR1 MRF281ZR1 MRF281SR1 MRF281 200S EB212 MRF281 MRF281ZR1 PCN13420 MRF281Z PCN13232

    motorola j117

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation


    Original     		PDF MRF281SR1 MRF281ZR1 motorola j117

    3734 Japan

    Abstract: PCN13232
    Text: Freescale Semiconductor Technical Data Document Number: MRF281 Rev. 6, 10/2008 RF Power Field Effect Transistors MRF281SR1 MRF281ZR1 Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF MRF281 MRF281SR1 MRF281ZR1 3734 Japan PCN13232

    200S

    Abstract: MRF281SR1 MRF281ZR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 200S MRF281ZR1

    MRF5s9070nr1

    Abstract: Mrf377 MRF9135LSR3 MRF5P21180HR6 MRF9030L MRF9060L MRF9030N
    Text: Chapter Five RF Transistors - Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-3 MRF9045LSR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 - 202 MRF281SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF MRF6S27085HR3 MRF6S27085HSR3 MRF6P27160HR6 MRFG35003M6T1 MRFG35003MT1 MRFG35005MT1 MRFG35010 MRFG35010MT1 MRFG35030R5 MRF5s9070nr1 Mrf377 MRF9135LSR3 MRF5P21180HR6 MRF9030L MRF9060L MRF9030N

    Ni200

    Abstract: MRF281Z
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for


    Original     		PDF Characteri11 MRF281SR1 MRF281ZR1 Ni200 MRF281Z

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF