32107
Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
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SST27SF256
SST27SF256
32107
oasis
TTL 7452
A115
32-PIN
A103
A114
Tekelec TA
27721
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PDF
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TA 7644 BF
Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
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SST31LH041
D16116
TA 7644 BF
cmos power TCP 8108
NEXUS FLASH ERASE
oasis
TCP 8108
32-PIN
F01A
SST31LH041
830049
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PDF
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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PDF
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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OCR Scan
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SST32LH802
128Kx16
SST32LH802
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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OCR Scan
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC fjPD42601 1,048,576 x 1-BIT SILICON FILE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The ¿/PD42601 silicon file is an economical mass storage device specifically designed to replace mag netic disk drives in silicon disk, solid-state recording,
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fjPD42601
/PD42601
//PD42601
CEL-001069
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PDF
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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PDF
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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OCR Scan
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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PDF
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oasis
Abstract: SST39VF400 SST39VF400 read code
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:
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OCR Scan
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16-Bit)
SST39VF400
oasis
SST39VF400
SST39VF400 read code
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PDF
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uPD42101
Abstract: PD42101 B7S2 uPD41101 analog signal delay UPD42102 UPD411 TSC 913 AS1135 mPD41
Text: E C ELECTRONICS INC NEC 3flE D NEC Electronics Ine. B t,MS7S2S 003 1427 5 M N E C E APPLICATION NOTE 55 yt/PD41101/yuPD41102 H IGH-SPEED LIN E B U F F E R S 5 Introduction Figure 1. The //PD411Q1 and ¿ PD41102 are high-speed serial access line buffers organized as 910 words x 8 bits and
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uPD411Q1
PD41102
ThejuPD41101
iPD41101
The/iPD42101
/UPD42102
/JPD41101
and/uPD41102.
QD31441
juPD41101///PD41102
uPD42101
PD42101
B7S2
uPD41101
analog signal delay
UPD42102
UPD411
TSC 913
AS1135
mPD41
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PDF
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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PDF
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CHN 602
Abstract: CHN 847
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020
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SST29EE020
SST29LE020
SST29VE020
CHN 602
CHN 847
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PDF
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Untitled
Abstract: No abstract text available
Text: North American Sales Offices C A N A DA Ciber Electronica, S.A. de C.V. Arquitectos No. 102 64700 Monterrey, Nuevo Leon MEXICO Phone/Fax: 528 359-8933 ALBERTA r.n. Longman Sales, Inc. 6815 - 8th St. NE, Suite 178 Calgary, Alberta T2E 7H7 Phone: (403) 295-6324
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SST39VF200-70-4C-EK
Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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16-Bit)
SST39VF200
SST39VF200-70-4C-EK
oasis
SST39VF200
XX98
ST39VF200-90-4C-U1
SST39VF200-90-4C-EK
SST39VF200-90-4I-EK
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PDF
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CHN 847
Abstract: chn 734
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption
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SST29EE010
SST29LE010
SST29VE010
and-1102
CHN 847
chn 734
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PDF
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Hyde Park Electronics
Abstract: 4001 PA PIONEER
Text: /AN Ü ^ Sales Offices, Distributors & Representatives September 1991 Altera U.S. Sales Offices N O R TH ER N C A LIFORNIA C O R PO R A TE H EAD Q U A R TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408) 984-2800 FAX: (408) 248-7097
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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PDF
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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PDF
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chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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OCR Scan
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SST37VF010
32-Pin
SST37VF010
chn 347
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:
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SST39LH512
SST39LH010
SST39LH020
SST39LH040
SST39LH010
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PDF
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Design Considerations for the SST FlashFlex51 Family Microcontroller
Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when
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FlashFlex51
SST89F54/58
Design Considerations for the SST FlashFlex51 Family Microcontroller
Actron
endrich
Oasis
actron international
6812 microcontroller
NORTH AMERICA SALES AND DISTRIBUTION
Northern Design Electronics
Thorson Pacific
522-1150
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PDF
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D27C1001a
Abstract: PD27C1001A 27C1001A
Text: SEC //PD27C1001A 131,072 X 8-BIT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration T h e ¿/PD27C1001A is a 1,048,576-bit ultraviolet eras able and e lectrically program m able read-only memory fabricated with double-polysilicon C M O S technology
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uPD27C1001A
576-bit
The//F5D27C1001A
32-pin
//PD27C1001A
32-Pln
PD27C1001A
//PD27C1001A
27C1001A
D27C1001a
PD27C1001A
27C1001A
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PDF
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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OCR Scan
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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PDF
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