82S1 Search Results

82S185

Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
Contextual Info: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: 82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: 82S184/185: -100MA max 82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector

82S153

Abstract: ic 91215 82S153-5 S9S8 82S153-2 77153 82S153/B2C
Contextual Info: HARRIS HPL-77153/82S153 HPlJMHarris P ro g ram m a b le Logic Features • LOGIC PATHS TE STED TO ENSURE FU N C T IO N A L IT Y • FAST ACCESS IN P U T TO O U TP U T • PROG RAMM ABLE LOGIC C IRC UITS • R E D U C TIO N O F 1C IN V E N TO R IE S 40nsec M A X

77153

Abstract: 60SC4 82S153
Contextual Info: 33 HARRIS HPL-77153/82S153 H P C m H arris P r o g ra m m a b le L o g ic Features • L O G IC P A T H S T E S T E D T O E N S U R E F U N C T IO N A L IT Y • F A S T A C C ES S IN P U T T O O U T P U T • L O W IC C . 1 55 m A M A X

82S16

Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
Contextual Info: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w ord e xp a n sio n in bused

signetics 82s100

Abstract: 82S100 82S101 82S100/BXA Fuse-Programmable controllers Programmable Logic Array PBPT 40DIP6
Contextual Info: Signetics 8 2 S 1 0 0 /8 2 S 1 0 1 Field Programmable Logic Array 16x48x8 Military Customer Specific Products DESCRIPTION The 82S100 (3-State) and 82S101 (OpenCollector) are bipolar, Fuse Program­ mable Logic Arrays (FPLAs). Each device utilizes the standard AND/OR invert archi­

N82S147

Abstract: S82S147F 82S147 S82S147 4096-BIT
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 4096-BIT BIPOLAR PROM 5 12x 8 82S147 (T.S.) DESCRIPTION FEATURES The 82S147 is fie ld -p ro g ra m m a b le , w h ich m eans th a t cu sto m p a tte rn s are im m e d i­ a te ly a va ila b le by fo llo w in g th e S ig n e tic s

M 82S181

Abstract: 82S180 82S181 N82S181 S82S181
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

N82S123F

Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Contextual Info: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which

82s185

Contextual Info: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: 82S184/185: 100ns max 82S184/185: 150ns max • Input loading: 82S184/185: -1 0 0 MA max 82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector

Contextual Info: 82S126A Signelics 82S 129A IK-Bit TTL B ip o la r P R O M Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­

82S16

Abstract: 82516 N82S16 82S17 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"
Contextual Info: JANUARY 1983 BIPOLAR M EM O R Y DIVISION 256-BIT BIPOLAR RAM 256 X 1 DESCRIPTION T he 82S16 a n d 82S17 are R e a d /W rite m e m o ry a rra y s w h ic h fe a tu re e ith e r ope n c o lle c to r o r 3 -s ta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w o rd e x p a n s io n in b u s e d

82S159

Abstract: 82S158
Contextual Info: JAN UARY 1983 B!POLAR M EM OR Y DIVISION FIELD PROGRAMMABLE LOGIC SEQUENCER 16 x 45 x 12 82S158 (O.C.)/82S 159 (T.S.) INTEGRATED FUSE LOGIC SERIES 20 PROGRAM CYCLE ROW /COLUM N FUSE ADDRESSING VARIABLE SELECT TABLE1 ROW HEX A D D RESS F0F1F2F3 1 B1 2®3

TAA 141

Abstract: 82S140 141 PROM 82S141
Contextual Info: BIPOLAR M E M O R Y DIVISION JAN UARY 1983 4096-BIT BIPOLAR PROM 5 1 2 x 8 82S140 (O .C.)/82S14i (T.S.) DESCRIPTION FEATURES T h e 82S 140 a n d 82S141 are fie ld p ro g ra m ­ m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s are im m e d ia te ly a v a ila b le by f o llo w in g th e

CQCC2-N28

Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I

82S102

Abstract: 82S103 FUSE f7 470H P601 F-7112 82S1 signetics 82s102 82S103-I signetics 82s103
Contextual Info: 82S102-I.N • 82S103-I,N DESCRIPTION FEATURES The 82S102 and 82S103 are Bipolar pro­ grammable AND/NAND gate arrays, con­ taining 9 gates sharing 16 common inputs. On-chip input buffers enable the user to individually program for each_gate either the True lm , Complement (lm), or Don’t

AS-016

Abstract: 82S147 82S147A f0035 AS016 33-OS
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 512 x 8 82SH7A FEATURES DESCRIPTION • Address access time: 75ns max The 82S147 and 82S147A are field-programmable, which means that custom patterns are immediately available by following the

82S191

Abstract: saa 1097 PHILIPS 82S191A 62S191
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 16K-bit TTL bipolar PROM 2048 x 8 82S191, 82S191A FEATURES DESCRIPTION • Address access time: The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the

82S137

Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins

82S147B

Abstract: F0180 mux 8 to 1 timing
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding

SIGNETICS* fusing procedure

Abstract: 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126
Contextual Info: N 8 2 S126A 8 2 S129A i 1 K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­

prom 256x4 bit

Abstract: prom 82S126 82S126 82S129 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126 82S129 1K-bit TTL bipolar PROM 256x4 • Random logic • Code conversion FEATURES • Address access time: 60ns max • Input loading: -150µA max • On-chip address decoding

82S135

Abstract: SIGNETICS* 82S135 N82S135N 1CE2 n82s135 I206
Contextual Info: Philips Components-Signetics 82S135 Document No. 853-0032 ECN No. 96054 Date of Issue March 14,1989 Status Product Specification 2K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S135 is field programmable, which means that custom patterns are

82s185

Contextual Info: Philips Components-Signetics Document No. 853-0131 ECN No. 86487 Date of Issue N ovem ber 11,1986 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products DESCRIPTION FEATURES The 82S185 is field programmable, which means that custom patterns are

IC 82S123

Abstract: N82S23N n82s123n
Contextual Info: Philips C o m p o n e n ts -S ig n e tic s D o c u m e n t N o . 8 5 3 -0 1 54 ECN N o. 86487 Date o f Is s u e N ove m b e r 11, 1986 S ta tu s P roduct S pecification 82S23 82S123 256-bit TTL bipolar PROM M em ory P ro du cts PIN CONFIGURATIONS DESCRIPTION