8192WORDS Search Results

10ST10

Abstract: lq55
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

NE as7

Abstract: G1712
Contextual Info: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type

ST7035

Abstract: sanyo tas 2110 LC3564S LC3564SM LC3564SS LC3564ST ST-70 dip28 600mil package
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM O verview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

MB81C79

Contextual Info: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a

Contextual Info: Ordering num ber: EN4794B SANYO CMOS LSI N0.4794B LC3564S. SS, SM , ST-70/85/10 i 64K 8192words X 8 bits SRAM Overview T he LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs w ith a n 8192-word X 8-bit organization. These SRAMs are full CMOS type

Contextual Info: CMOS HIGH-SPEED STATIC RAM 72K 8K x 9-BIT PRELIMINARY INFORMATION IDT71569 With Address Latches DESCRIPTION: FEATURES: • 8192-words x 9-bits organization • Address Latch • Fast access time: — Commercial: 20/25ns — Military: 25/35ns • Battery backup operation - 2V data retention voltage

ME16

Abstract: 1772-LP1 LG plc plc lg 1772MEB 1772-LG plc Rockwell allen-bradley 1772-meb 1772-MEB 1772-LP3
Contextual Info: Installation Data PLCĆ2/20, PLCĆ2/30 Memory Modules AllenĆBradley PLCĆ2/20 and PLCĆ2/30 CMOS RAM Memory Modules Installation Data To the Installer CMOS RAM memory modules for the PLC-2/20 and the PLC-2/30 programmable controllers are available in two forms:

Contextual Info: Integrated Device Technology, Inc. BiCMOS HIGH-SPEED STATIC RAM 64K 8K x 8-BIT ADVANCE INFORMATION IDT71B64 FEATURES: DESCRIPTION: • 8192-words x 8-bits organization • JEDEC standard 28-pin DIP, SOJ, and 32-pin LCC « Fast access time: — Commercial: 10/12/15ns (max.)

tlu 011

Abstract: CP12 CP14 CP15 CRC-32 4000 SERIES MOTOROLA land dpu 230 RX10B
Contextual Info: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 Copyright 2004 Motorola, Inc. All rights reserved. No part of this documentation may

engine control module seg np2

Abstract: tlu 115 tlu 011 CP15 CRC-32 CP12 CP14 l 83s 472 722 C3E 351 IBM powerpc 405 GPr 266MHz PROCESSOR
Contextual Info: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Freescale Semiconductor, Inc., 2004. All rights reserved. Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 How to Reach Us:

static ram 8K

Contextual Info: ADVANCE INFORMATION IDT 7169S IDT 7169L C M O S HIGH-SPEED STATIC RAM 8K x 9-BIT FEATURES: DESCRIPTION: • 8192-words x 9-bits organization The IDT7169 is a 73728-blt high-speed static RAM organized as 8K x 9. It Is fabricated using IDT’s high-performance, high reliability

74L47

Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS

Contextual Info: Ami 0P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with increasing tempera­ ture • Internally voltage compensated providing flat AC perfor­

SN76670

Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS

S8550 equivalent

Abstract: 93cc46 66a hall sensor 8254ab d2 SMD TRANSISTORs pnp npn SOT-23-6 8254aa s2914 s-8254a S-80141ALMC MOTOROLA LITHIUM-ION msds
Contextual Info: Product Catalogue For customers want to select product from various lineups Various lineups of highly reliable products for your application Long operation and energy saving Liquid crystal/Plasma TVs ●Power supply circuit ・Voltage regulator ICs Mobile phones

Contextual Info: ADV NICRO {MEHORY} Tb D eT| 0 2 S 7 52 Ô 002SÖ71 Q J " T - % - l5 : 2 5 Am10P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with Increasing tempera­

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

Contextual Info: gstx \}dt Integrated Device Technology, Inc. CM O S HIGH-SPEED STATIC RAM 72K 8K x 9-BIT) PRELIMINARY INFORMATION IDT71569 With Address Latches FEATURES: DESCRIPTION: • 8192-words x 9-bits organization • Address Latch • Fast access time: — Commercial: 20/25ns

TMS4400JC

Abstract: tms 980 tms4400 tms 470 980
Contextual Info: MOS LSI TMS 4400 JC. TM S 4400 NC 4096-B IT STATIC READ ONLY MEMORY features • 4096-bit capacity • Static operation • Access time less than 1 microsecond typical • Two organizations available • Open-drain output buffers or double-ended buffers

Contextual Info: Integrated Device Technology, Inc. CMOS HIGH-SPEED STATIC RAM 72K 8K X 9-BIT ADVANCE INFORMATION IDT7169S IDT7169L FEATURES: DESCRIPTION: • 8192-words x 9-bits organization • JEDEC standard 28-pin DIP, SOJ, and 32-Pin LCC • Fast access time: — Commercial: 20/25/35ns (max.)

tms 2300

Abstract: HIC037 transistor bf 175
Contextual Info: TMS4020NC • Mechanical data and pin alignments Add the following data: The TM S 40 20 NC is also available in a 22 pin dual-in line package w ith 400-m il spacing between leads. The pin assignments are as shown. FUNCTION PIN NO. FUNCTIC 1 2 3 4 5 6 Ag Ag

signetics 27c64

Abstract: 27C64A 27C64A-25 27C64A SIGNETICS 2764 64k uv erasable prom 27C84 signetics 27c64a 27C64A/BXA-20 eprom 27c64 PROGRAMMER CIRCUIT intelligent 2764
Contextual Info: NAPC/ SIGN ETIC S/MILITAR Y Signetics abE D • tbSa^at Ü O C m l S 1 ■ 27C64A 64K CMOS UV Erasable PROM 8K x 8 Product Specification Military Application Specific Products CERDIP PIN CONFIGURATION DESCRIPTION The Signetics 27C64A CMOS EPROM Is 64K-BK 5V only memory organized as