8192X8 Search Results

MATRA

Contextual Info: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.

AM27C49T

Contextual Info: a Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs — JEDEC-approved pinout 5-Volt ±10% power supplies for both Commer­

MA3864

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA3864 AUGUST 1993 ADVANCE DATA DS3832-2.1 MA3864 RADIATION HARD 8192 x 8 BIT MASK-PROGRAMMABLE ROM The MA3864 64k Mask Programmable ROM is configured as 8192x8 bits and manufactured using CMOS-SOS high

X2864A

Abstract: x2864 X2864A-25 X2864A-35 X2864A-45 x2864ai RR-520
Contextual Info: tear Commercial X2864A fli 0, vflR i Industrial_ X2864AI_ 8192x8Blt 64K _ Electrically Erasable PROM FEATURES • 250 ns Access Time • Fast W rite Cycle Times — 16-Byte Page W rite Operation — Byte or Page W rite Cycle: 5 ms Typical

eprom 2764

Abstract: ROM 2764 2732 eprom S2364B S2364C S2364I S2364M
Contextual Info: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S2364 Features □ □ □ □ □ □ □ □ □ Fast Access Time: S2364B-250ns (0°C to +70°C ) Maximum S2364C-200ns (0°C to +70°C ) Maiximum S2364!-250ns ( -4 0 ° C to +85°C ) Maximum S2364M -300ns (-5 5 ° C to + 125°C) Maximum

Gould

Abstract: S68B364 S68C364 S68B3 68A76 S688364 S68I364 S68M364 S68364 68A764
Contextual Info: 65,536 Bit 8192x8 Static NMOS ROM •> GOULD Electronics S68364 Features General Description Fast Access Time: S68B364-250ns (0°C to 70°C) M aximum S68C364-200ns (0°C to +70°C ) Maximum S68l364-250ns ( -4 0 ° C to 85°C) Maximum S68M 364-300ns (~55°C to 125°C) Maximum

ROM 2764

Abstract: eprom 2764 2764 rom 2764 eprom S6364 eprom circuit diagram 2764 block diagram
Contextual Info: 65,536 Bit 8192x8 Static CMOS ROM •> GOULD Electronics S6364 Features □ F a s t A c c e s s Time: 250ns M axim u m □ L o w S ta n d b y P o w e r 0.055m W M a x im u m □ F u lly S ta tic O p e ration □ S in g le + 5 V ± 10 % P o w e r S u p p ly

Contextual Info: 64K X24645 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA —Standby Current Less Than 1|±A

x2464s

Contextual Info: t o 64K X24645 u r 8192x8 Bit Advanced 2-Wire Serial E2PROM with BlockLock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS — Active Read Current Less Than 1mA — Active W rite Current Less Than 3mA — Standby Current Less Than 1|iA

x2864h

Abstract: X2864HD X2864HP-90
Contextual Info: JÜ fiAir 64K Ö T Commercial X2864H a io o v fto i* Industrial_ X2864HI_ 8192x8B lt _ Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

Contextual Info: 31E D XI CO R INC m 0 Q Q 2 flbb 2 H ^ 1 7 4 3 S i i G W Commercial Industrial 64K X2864H X2864HI S o r V ,8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 70 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times

EPROM 2764-25

Abstract: 2764-25 t4bu 2764c 2764-30 eprom
Contextual Info: FUJITSU M I C R O E L EC TR ON IC S S3E D 374*17 b E Q O M E b O T 000101020191000100010001020100010202 F U JIT S U ONÜgMEMOR 010001018002020102010201000102010201 MBM 2764-20 MBM 2764-25 MBM 2764-30 January 1984 Edition 4.0 M OS 8192x8BIT U V E R A S A B L E A N D E L E C T R IC A L L Y

Amd 27C49

Contextual Info: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­

Contextual Info: 64K Military X2864HM 8192x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical —Complete Memory Rewrite: 750 ms

QQ054

Contextual Info: UK X24645 64K 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA — Standby Current Less Than 1^A

Contextual Info: A p p l ic a t io n N o t e s and D evelo pm en t S ystem A V A I L A B L E A N 62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE

w2464

Contextual Info: AUG 1 5 1992 W2464 Winbond 8K X 8 CMOS STATIC RAM DESCRIPTION FEATURES • Low Power C o n su m p tio n : A c t iv e The W2464 i s a H ig h Speed, Low Power CMOS S t a t i c RAM O rg a n iz e d a s 8192x8 : 250mW T y p . B it s and O p e ra te s on a S in g le 5 - V o lt S u p p ly . I t i s

Contextual Info: JÜEQÜ A p p l ic a t io n N o t e s a n d D e v e l o p m e n t S y s t e m A V A I L A B L E AN62-64 • AN66 • AN68 • XK88 80C51 Microcontroller Family Compatible X88C64 SLIC E2 64K 8192x8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION SLIC SELF LOADING INTEGRATED CODE

AM27C49

Abstract: AM27C49T-55
Contextual Info: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs — JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­

Contextual Info: G E C P L E S S E Y ma93m s I M I < \ [> I, ( I () K Radiation Hard 8192x8 Bit Static RAM s> (Advance Data) S10302ADS Issue 1.3 October 1990 Features Block Diagram • 1.5pm CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 10s rad (Si)

Contextual Info: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with

2764 eprom pin diagram

Abstract: 8192X8BIT
Contextual Info: ìntéT 2186A FAMILY 8192x8 BIT INTEGRATED RAM • Low-cost, high volume HMOS III technology Simple asynchronous refresh operation/ static RAM compatible ■ High density one transistor cell 2764 EPROM compatible pin-out ■ Single + 5V ± 10% supply Two-line bus control

HY27C64-20

Abstract: HY27C64-15 HY27C64-30 IN3064
Contextual Info: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

HY27C64-15

Abstract: HY27C64-20 HY27C64-30 IN3064
Contextual Info: HY27C64 8192x8-Bit CMOS UV EPROM A HYUNDAI SEM ICONDUCTOR DESCRIPTION FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where