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    80N5 Search Results

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    80N5 Price and Stock

    Littelfuse Inc IXFN80N50P

    MOSFET N-CH 500V 66A SOT227B
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    DigiKey IXFN80N50P Tube 2,956 1
    • 1 $30.99
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    Newark IXFN80N50P Bulk 103 1
    • 1 $30.37
    • 10 $23.72
    • 100 $22.09
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    Chip1Stop IXFN80N50P Tube 296
    • 1 $24.7
    • 10 $21.5
    • 100 $19.4
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    STMicroelectronics STB180N55F3

    MOSFET N-CH 55V 120A D2PAK
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    DigiKey STB180N55F3 Digi-Reel 2,169 1
    • 1 $7.15
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    STB180N55F3 Cut Tape 2,169 1
    • 1 $7.15
    • 10 $4.833
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    STB180N55F3 Reel 2,000 1,000
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    Bristol Electronics STB180N55F3 1,035
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    Littelfuse Inc IXFK80N50P

    MOSFET N-CH 500V 80A TO264AA
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    DigiKey IXFK80N50P Tube 450 1
    • 1 $20.66
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    ROHM Semiconductor ZDX080N50

    MOSFET N-CH 500V 8A TO220FM
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    DigiKey ZDX080N50 Bulk 374 1
    • 1 $2.18
    • 10 $1.393
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    Littelfuse Inc IXFR80N50P

    MOSFET N-CH 500V 45A ISOPLUS247
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    DigiKey IXFR80N50P Tube 368 1
    • 1 $22.53
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    • 100 $15.24267
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    Newark IXFR80N50P Bulk 300
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    RS IXFR80N50P Bulk 8 Weeks 30
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    80N5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P O-264 80N50P IXFK 80N50P PLUS247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500


    Original     		PDF 80N50 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P 80N50P O-264 PLUS247

    80N50D

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 OT-227 E153432 80N50D

    80n50

    Abstract: 80N50P ISOPLUS247 4525 GE alize
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize

    80n50

    Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 75N50 OT-227 E153432 125OC 728B1 80n50 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 100kHz 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 227TM 728B1

    80N50 MOSFET

    Abstract: 80N50 75N50 SNC80
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 80N50 75N50 OT-227 E153432 728B1 80N50 MOSFET 80N50 75N50 SNC80

    80n50

    Abstract: 80N50 MOSFET
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 227TM 728B1 80n50 80N50 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 80N50Q 264TM 728B1

    80N50P

    Abstract: IXFN 80N50P E153432
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P 80N50P IXFN 80N50P E153432

    80N50Q2

    Abstract: 0169E 123B16
    Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		PDF 80N50Q2 OT-227 E153432 728B1 123B1 728B1 065B1 80N50Q2 0169E 123B16

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		PDF 80N50P

    80N50P

    Abstract: IXFK 80N50P 80N50 PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		PDF 80N50P 80N50P IXFK 80N50P 80N50 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 80N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 80N50P

    80N50P

    Abstract: ISOPLUS247 PLUS247
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247

    80N50Q2

    Abstract: 80n5 IXFB 80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N50Q2 264TM 065B1 728B1 123B1 728B1 80N50Q2 80n5 IXFB 80N50Q2

    80n50

    Abstract: 80N50 MOSFET 125OC IXFN80N50
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50 100kHz 125OC 80n50 80N50 MOSFET 125OC IXFN80N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 80N50Q2 264TM 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P OT-227 E153432 405B2

    80N50Q2

    Abstract: IXFL80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N50Q2 405B2 80N50Q2 IXFL80N50Q2

    80N50

    Abstract: No abstract text available
    Text: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2


    OCR Scan     		PDF IXFN80N50 to150 OT-227 E153432 80N50