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    ISL8280MEVAL1Z Renesas Electronics Corporation Single Channel Step-Down, Synchronous DC/DC Power Supply Module Evaluation Board Visit Renesas Electronics Corporation
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    80MEV Price and Stock

    Texas Instruments TAS5780MEVM

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    Renesas Electronics Corporation ISL8280MEVAL1Z

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    Texas Instruments LMP8480MEVM-S-NOPB

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    Murata Manufacturing Co Ltd MEV1S2409SC

    Isolated DC/DC Converters - Through Hole 1W 24-9V SIP SINGLE DC/DC
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    Mouser Electronics MEV1S2409SC 709
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    TTI MEV1S2409SC Tube 25 1
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    Murata Manufacturing Co Ltd MEV1S0505SC

    Isolated DC/DC Converters - Through Hole 1W 5-5V SIP SINGLE DC/DC
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    Mouser Electronics MEV1S0505SC 657
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    80MEV Datasheets Context Search

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    25A45

    Abstract: UC1843x
    Text: Standard Products ACT5031 RadHard High Speed PWM Controller www.aeroflex.com/RadHard March 21, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ a n i y r Radiation Hardness: - Total Dose 100 KRad Si - Single Event Upset 80MeV-cm2 /mg


    Original     		ACT5031 80MeV-cm2 24-lead, SCD5031 25A45 UC1843x PDF

    306RP

    Abstract: no11 "Analog Multiplexer" multiplexer 28 pin
    Text: 306RP RADIATION HARDENED 16-CHANNEL CMOS ANALOG MULTIPLEXER V+ 1 28 COM N.C. V- N.C. NO8 NO16 NO7 NO15 NO6 NO14 NO5 SEi 306RP NO13 NO12 NO4 NO3 NO11 NO2 NO10 NO1 NO9 EN GND A0 N.C. A3 A1 14 15 A2 FEATURES:  • RAD-PAK technology radiation-hardened against


    Original     		306RP 16-CHANNEL 80Mev/mg/cm 28-pin F28-02 98Rev5 306RP no11 "Analog Multiplexer" multiplexer 28 pin PDF

    MSI Logic

    Abstract: Structure of D flip-flop UNITED TECHNOLOGIES MICROELECTRONICS CENTER "radhard" overview Upset
    Text: Single Event Upset Design Techniques for UTMC’s RadHard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,


    Original     		PDF

    AT68166FT

    Abstract: 5962-06229 AT60142FT MQFP68 7531E o3752
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns preliminary information


    Original     		415mW MIL-STD-883 7531G AT68166FT 5962-06229 AT60142FT MQFP68 7531E o3752 PDF

    Untitled

    Abstract: No abstract text available
    Text: Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller The ISL7884xASRH is a high performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion


    Original     		ISL7884xASRH 28C4x 18C4x FN6991 PDF

    5962R0622908VXC

    Abstract: AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E 7842C AT68166H-YS18-E 5962-0622906VYC
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)


    Original     		MIL-STD-883 MQFPT68 7842C 5962R0622908VXC AT68166H 5962-0622908QXC 5962R0622906VYC 5962-0622906QYC AT68166H-YM20-E AT68166H-YS18-E 5962-0622906VYC PDF

    IR2110 equivalent

    Abstract: ac control using ir2110 and mosfet IR2110 application note IS-2100ARH IS2100ARH ac control using ir2110 IR2110 HIP2500 AN IR2110 IS-2100
    Text: Single Event Testing of the IS-2100ARH Half Bridge Driver Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event upset (SEU) and single-event burnout (SEB). These effects can lead to


    Original     		IS-2100ARH IS-2100ASRH 90MeV/mg/cm2, 4x106 42x10-4 3x10-4 IR2110 equivalent ac control using ir2110 and mosfet IR2110 application note IS2100ARH ac control using ir2110 IR2110 HIP2500 AN IR2110 IS-2100 PDF

    AT68166F-YS18SR

    Abstract: AT68166f 5962-0622902VXC atmel 025 MQFP68 5962-06229 5962-0622902QXC 7747A AT60142FT AT68166F-YS18MQ
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F – <18 ns for AT68166G in development prototypes in Q4 2007


    Original     		AT68166F AT68166G MIL-STD-883 AT68166F-YS18SR AT68166f 5962-0622902VXC atmel 025 MQFP68 5962-06229 5962-0622902QXC 7747A AT60142FT AT68166F-YS18MQ PDF

    ISL78840ASEH

    Abstract: 40MeV 5962R0724907VXC 5962R0724908VXC 5962R0724908V9A ISL78845
    Text: Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller ISL78840ASEH, ISL78841ASEH, ISL78843ASEH, ISL78845ASEH The ISL7884xASEH is a high performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM


    Original     		ISL78840ASEH, ISL78841ASEH, ISL78843ASEH, ISL78845ASEH ISL7884xASEH 28C4x 18C4x ISL78840ASy FN7952 ISL78840ASEH 40MeV 5962R0724907VXC 5962R0724908VXC 5962R0724908V9A ISL78845 PDF

    5962-0622905QYC

    Abstract: 5962R0622905VYC 7843B AT68166HT MQFPT68 at68
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns – 20 ns – 18 ns preliminary information


    Original     		415mW MIL-STD-883 MQFPT68 AT68166HT-2he 7843B 5962-0622905QYC 5962R0622905VYC AT68166HT at68 PDF

    5962-0622906

    Abstract: 5962R0622906VYC 5962-0622906QYC 7842B 5962-0622906VYC AT68166H-18
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)


    Original     		MIL-STD-883 MQFPT68 AT68166H-18. 450mW AT68166H-20. 7842B 5962-0622906 5962R0622906VYC 5962-0622906QYC 5962-0622906VYC AT68166H-18 PDF

    5962-0622906VYC

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns – 18 ns Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)


    Original     		MIL-STD-883 7842Dâ 5962-0622906VYC PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


    Original     		4115Lâ PDF

    AT69170

    Abstract: AT69170E 0x000000001 ATF280E FP18 7752a 0x55555
    Text: Features • 4Mbits x1 Non Volatile Memory Designed to Store Field Programmable Gate • • • • • • • • • • • • • • • Arrays FPGAs Configurations In-System Programming (ISP) via Two-Wire Bus Simple Interface to SRAM FPGAs Compatible with Atmel AT40KEL040 and ATF280E FPGAs


    Original     		AT40KEL040 ATF280E 80MeV/mg/cm2 AT69170 AT69170E 0x000000001 FP18 7752a 0x55555 PDF

    RadHard-By-Design integrated circuit suppliers: A success story

    Abstract: dsp radiation Radiation Tolerant DSP processor ORBIT SEMICONDUCTOR 90-nm CMOS standard cell library process technology Upset
    Text: Space applications Military EMBEDDED SYSTEMS RadHard-By-Design integrated circuit suppliers: A success story By Anthony Jordan The telecommunications and defense industries demand ever increasing functionality in space-based equipment such as satellites, probes, and spacecraft.


    Original     		1990s, RadHard-By-Design integrated circuit suppliers: A success story dsp radiation Radiation Tolerant DSP processor ORBIT SEMICONDUCTOR 90-nm CMOS standard cell library process technology Upset PDF

    5962-06229

    Abstract: AT60142FT AT68166FT MQFP68
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns, 20 ns – 18 ns preliminary information


    Original     		415mW MIL-STD-883 7531H 5962-06229 AT60142FT AT68166FT MQFP68 PDF

    DC MOTOR DRIVE USING BUCK BOOST CONVERTER

    Abstract: PWM5031 motors used in satellite communication
    Text: FOR IMMEDIATE RELEASE: July 28, 2005 CONTACT: Teresa Farris MARCOM Manager Aeroflex Plainview 35 South Service Rd. Plainview, NY 11803 719-594-8035 voice 719-594-8468 (fax) Email: teresa.farris@aeroflex.com www.aeroflex.com/power AEROFLEX EXPANDS THEIR POWER PRODUCT FAMILY


    Original     		PWM5031 DC MOTOR DRIVE USING BUCK BOOST CONVERTER motors used in satellite communication PDF

    atmel 0726

    Abstract: atmel 0936 Atmel 0347 MG2044P MG2142P MG2270P 4116L AT/atmel 0936
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices up to 270K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


    Original     		4116L atmel 0726 atmel 0936 Atmel 0347 MG2044P MG2142P MG2270P AT/atmel 0936 PDF

    AT68166

    Abstract: 5962R0622905VYC
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time: – 25 ns – 20 ns – 18 ns preliminary information


    Original     		415mW MIL-STD-883 7843C AT68166 5962R0622905VYC PDF

    AT68166F-20

    Abstract: AT697E AT68166F-YS18-E MQFPT68 5962-06229 AT60142F AT60142FT AT68166F smd a10 5962R0622904VYC
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)


    Original     		AT68166F MIL-STD-883 MQFPT68 7747C AT68166F-20 AT697E AT68166F-YS18-E 5962-06229 AT60142F AT60142FT AT68166F smd a10 5962R0622904VYC PDF

    1000 microfarad 25v capacitor

    Abstract: capacitor, 1000 microfarad IS-1009RH IS1009RH IS-1009 1 microfarad capacitor 100uF (M) capacitor filter capacitor cross reference k500 npn pnp Rf transistor bipolar cross reference
    Text: Single Event Testing of the IS-1009RH Voltage Reference October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuitry, including singleevent latchup SEL , single -event transient (SET) and single -event burnout


    Original     		IS-1009RH 10Kohm, 500mV, 100uF 500mV 1000 microfarad 25v capacitor capacitor, 1000 microfarad IS1009RH IS-1009 1 microfarad capacitor 100uF (M) capacitor filter capacitor cross reference k500 npn pnp Rf transistor bipolar cross reference PDF

    IS-139ASRH

    Abstract: LM139 SN13 80MeV PF0300 is139a
    Text: Single Event Testing of the IS-139ASRH Quad Comparator October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL ,


    Original     		IS-139ASRH IS139ASRH 84MeV/mg/cm2. LM139 SN13 80MeV PF0300 is139a PDF

    at68166f

    Abstract: MQFP68 5962-06229 AT60142F AT60142FT
    Text: Features • • • • • • • • • • • • • • • 16 Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time – 20 ns, 18 ns for AT68166F Power Consumption – Active: 620 mW per byte Max @ 18ns - 415 mW per byte (Max) @ 50ns (1)


    Original     		AT68166F MIL-STD-883 7747B at68166f MQFP68 5962-06229 AT60142F AT60142FT PDF

    ATMEL 634

    Abstract: atmel 946 atmel 044 AtMEL 624 MG2044E MG2091E MG2194E MG2265E MG2360E MG2480E
    Text: Features • • • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG


    Original     		4115L ATMEL 634 atmel 946 atmel 044 AtMEL 624 MG2044E MG2091E MG2194E MG2265E MG2360E MG2480E PDF