8075bn
Abstract: apt8075bn 8090BN APT8090BN
Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω 8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage
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Abstract: No abstract text available
Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω Ω 8090BN 800V 12.0A 0.90Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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Text: A dvanced po w er Te c h n o l o g y * APT8075BNR 800V 13.0A 0.75Í2 8090BNR 800V 12.0A 0.90ÍÍ O D O S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter APT8075BNR 8090BNR UNIT
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Abstract: 090Q SML8075BN sml7575bn
Text: SEM ELAB bOE ]> PLC 0133107 QDOOtibM fl5S lili ISMLB MOS POWER iFFi à -ie> SML8075BN SML7575BN 8090BN SML7590BN SEME LAB 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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Abstract: Kennedy
Text: A dvanced P ow er Tec h n o lo g y 8 O D APT8075BNR 8090BNR O s H?'w e r m o s n a 800V 13.0A 0.75fi 800V 12.0 A 0.90Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol All Ratings: Tc = 25°C unless otherwise specified.
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Abstract: t8075 t80-75 8075bn APT6076
Text: O A D d v a n c e d P o w er T e c h n o lo g y 9 APT8075BN APT7575BN 8090BN APT7590BN Ô S POWER MOS IV 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATING S All Ratings: T c = 25°C unless otherwise specified
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Abstract: 8075BN
Text: O A dvanced R ow er Te c h n o lo g y D APT8075BN APT7575BN 8090BN APT7590BN ô s 5 5 w e r m o s rm 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Í2 0.75Í1 0.90n 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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Text: A dvanced P o w er Te c h n o l o g y OD OS POWER MOS IV® APT8075BN 800V 13.0A 0.75Í1 8090BN 800V 12.0A 0.90Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.
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Text: A dvanced P ow er Te c h n o lo g y O D APT8075BN APT7575BN 8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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Na06SÂ
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APT8075BNR
Abstract: APT8090BNR
Text: O D O S A d va n ced R o w er Te c h n o l o g y APT8075BNR 8090BNR POWER MOS IV' 800V 800V 13.0A 0.75ÍÍ 12.0A 0.90ÍÍ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol VDSS All Ratings: T c = 25°C unless otherwise specified.
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Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR 8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C
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