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    800UM Search Results

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    800UM Price and Stock

    Littelfuse Inc 30R800UMR

    POLYFUSE RADIAL
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    DigiKey 30R800UMR Reel
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    Rochester Electronics LLC FSA800UMX

    SINGLE-ENDED MUX, 3 CHANNEL
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    onsemi FSA800UMX

    IC USB SWITCH 3X1 16UMLP
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    Sensata Technologies IELBXK111-1-62-80.0-U-M3-V

    Circuit Breakers Cir Brkr Hyd Mag
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    Mouser Electronics IELBXK111-1-62-80.0-U-M3-V
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    Sensata Circuit Breakers IELBXK111-1-62-80.0-U-M3-V

    Circuit Breaker, Hydraulic, Magnetic, 3 Pole, IEL Series | Sensata - Airpax IELBXK111-1-62-80.0-U-M3-V
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    Master Electronics IELBXK111-1-62-80.0-U-M3-V
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    Sager IELBXK111-1-62-80.0-U-M3-V 1
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    Find more 800UM price and stock on Findchips.com

    800UM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2080 800um Discrete GaAs pHEMT Applications •     Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features        Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dBm Typical Output Power - P1dB


    Original     		PDF TGF2080 800um TGF2080 800-Micron

    Untitled

    Abstract: No abstract text available
    Text: TGF2080 800um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dBm Typical Output Power - P1dB


    Original     		PDF TGF2080 800um TGF2080 800-Micron

    GaAs pHEMT MMIC medium power amplifier

    Abstract: TGA1073A TGA1073A-SCC
    Text: Product Datasheet August 15, 2000 26- 34 GHz Medium Power Amplifier TGA1073A-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL Bias 5 - 7V @ 220 mA


    Original     		PDF TGA1073A-SCC TGA1073A 25dBm 26-34GHz. 480um 800um TGA1073A-SCC 0007-inch GaAs pHEMT MMIC medium power amplifier

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    AN-1484

    Abstract: lm3478 schematic LM3478 AN1484 Si4442DY sepic converter sepic 2L mosfet AN201948-05-JP AN201948
    Text: ご注意：日本語のアプリケーション・ノートは参考資料として提供しており内容が 最新でない場合があります。製品のご使用に際しては、必ず最新の英文アプ リケーション・ノートをご確認ください。


    Original     		PDF AN-1484 AN201948-05-JP 00A/V( 800mho AN-1484 lm3478 schematic LM3478 AN1484 Si4442DY sepic converter sepic 2L mosfet AN201948-05-JP AN201948

    LM3478

    Abstract: LM34781 AN-1286 AN1286
    Text: 美国国家半导体公司 应用注释1286 Chance Dunlap 2008年4月8日 LM3478是用于开关型稳压的低侧N沟道控制器。像许多 LM3478数据手册中所讨论的开关器的基本原理。检查图1 中 开关型控制器一样，当用户确定补偿方案时，器件选择中所


    Original     		PDF LM3478N LM34781 LM3478 AN-1286 LM3478 LM34781 AN-1286 AN1286

    PCB design for very fine pitch csp package

    Abstract: gold embrittlement joint IRF6100 IRF6150 with or without underfill process of mosfet
    Text: FlipFETTM MOSFET Design for High Volume SMT Assembly Hazel Schofield, Tim Sammon, Aram Arzumanyan, Dan Kinzer. International Rectifier Introduction & Summary International Rectifier has used a proprietary technique to position all the terminals of a HEXFET device on the same face of the die. This has enabled the development of wafer scale


    Original     		PDF ISBN0-442-00260-2 ISPSD-99, PCB design for very fine pitch csp package gold embrittlement joint IRF6100 IRF6150 with or without underfill process of mosfet

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Super Beam type LED FL750-03-80 PRELIMINARY FL750-03-80 High Power type LED FL750-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 750nm.


    Original     		PDF FL750-03-80 FL750-03-80 750nm. 800um 800um 750nm 100mA

    Untitled

    Abstract: No abstract text available
    Text: epitex LED CHIP ＬＥＤ CN850-802 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN850-802 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy


    Original     		PDF CN850-802 120um 800um 800um 150um 100mA 100Hz 10kHz

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Super Beam type LED FL740-03-80 PRELIMINARY FL740-03-80 High Power type LED FL740-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 740nm.


    Original     		PDF FL740-03-80 FL740-03-80 740nm. 800um 800um 740nm 100mA

    TGA1073A

    Abstract: 75TH
    Text: Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance • • • • • • 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL


    Original     		PDF TGA1073A TGA1073A 25dBm 26-34GHz. 480um 800um 0007-inch 75TH

    TGA1073G

    Abstract: No abstract text available
    Text: Advance Product Information 19 - 27 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm


    Original     		PDF TGA1073G TGA1073G-EPU TGA1073G 25dBm 19-27GHz. TGA91073G 0007-inch

    ST7783

    Abstract: Sitronix Technology ST7783 ST7781 929 rev oh s26 G86 703 A2 s534 diode 929 rev oh S29 G82 770 A2 HEF 4543 IC Sitronix Technology
    Text: ST ST7781 262K Color Single –Chip TFT Controller/Driver 1. Introduction The ST7781 is a single-chip controller/driver for 262K-color, graphic type TFT-LCD. It consists of 720 source line and 320 gate line driving circuits. This chip is capable of connecting directly to an external microprocessor, and accepts,


    Original     		PDF ST7781 ST7781 262K-color, 8-bits/9-bits/16-bits/18-bits 240x320x18 Page80) Page79) Page39) ST7783 Sitronix Technology ST7783 929 rev oh s26 G86 703 A2 s534 diode 929 rev oh S29 G82 770 A2 HEF 4543 IC Sitronix Technology

    LM3478

    Abstract: AN-1286
    Text: ご注意：日本語のアプリケーション・ノートは参考資料として提供しており内容が 最新でない場合があります。製品のご使用に際しては、必ず最新の英文アプ リケーション・ノートをご確認ください。


    Original     		PDF LM3478 LM3478 AN200728-02-JP AN-1286 AN-1286

    82386

    Abstract: 134235 RF transmitter 433.92 3 pin 5v ablebond 84-1 LMI storage
    Text: AMMC-6222 7 to 21 GHz GaAs High Linearity Low Noise Amplifier Data Sheet Chip Size: 800 m x 2000μm 31.5 x 78.74 mils Chip Size Tolerance: ±10 μm (±0.4 mils) Chip Thickness: 100 ± 10 μm (4 ±0.4 mils) Pad Dimensions: 100 x 100 μm (4 x 4 mils) Description


    Original     		PDF AMMC-6222 2000m AMMC-6222 21GHz. 120mA AMMC-6222-W10 AMMC-6222-W50 AV01-0439EN AV02-1299EN 82386 134235 RF transmitter 433.92 3 pin 5v ablebond 84-1 LMI storage

    Untitled

    Abstract: No abstract text available
    Text: DA6281.001 26 March 2007 MAS6281 IC FOR 13.00 – 52.00 MHz XO This is advance information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice. • • • • Low Cost Divider Options up to fo/512


    Original     		PDF DA6281 MAS6281 fo/512 MAS6281

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Super Beam type LED FL710-03-80 Lead Pb Free Product – RoHS Compliant FL710-03-80 High Power type LED FL710-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. On forward bias, it emits a band of visible light which peaks 710nm.


    Original     		PDF FL710-03-80 FL710-03-80 710nm. 800um 800um 710nm 200mA

    Untitled

    Abstract: No abstract text available
    Text: epitex LED CHIP ＬＥＤ CN870-80 Opto-Device & Custom LED SPECIFICATION OF LED CHIP CN870-80 [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy


    Original     		PDF CN870-80 120um 800um 800um 150um 100mA 100Hz 10kHz

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Super Beam type LED FL850-03-80 Lead Pb Free Product – RoHS Compliant FL850-03-80 High Power type LED FL850-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens. These devices are intended to be operated at pulsed current of 4A under maximum 4.5V


    Original     		PDF FL850-03-80 FL850-03-80 800um 800um 850nm 200mA

    TGA1073G

    Abstract: GaAs pHEMT MMIC medium power amplifier TGA1073G-SCC
    Text: Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications


    Original     		PDF TGA1073G-SCC TGA1073G-SCC TGA1073G TGA1073G 25dBm 19-27GHz. TGA91073G 0007-inch GaAs pHEMT MMIC medium power amplifier

    Untitled

    Abstract: No abstract text available
    Text: LT1941 Triple Monolithic Switching Regulator FEATURES n n n n n n n n n DESCRIPTION The LT 1941 is a triple current mode DC/DC converter with internal power switches. Two of the regulators are step-down converters with 3A and 2A power switches. The third regulator can be configured as a boost, inverter


    Original     		PDF LT1941 LT3463 250mA DFN10 LT3464 1941fb

    Untitled

    Abstract: No abstract text available
    Text: TriQuint <+ Advance Product Information SEMICONDUCTOR* 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL


    OCR Scan     		PDF TGA1073A TGA1073A-EPU A1073A 480um 0007-inch

    TGA1073G

    Abstract: D549 TGA91073G
    Text: TriQuint <% SEMICONDUCTOR, Advance Product Information 1 9 - 2 7 GHz Medium Power Amplifier TGA1073G Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA


    OCR Scan     		PDF TGA1073G TGA1073G-EPU TGA1073G 480um 800um 25dBm 19-27GHz. TGA91073G 0007-inch D549

    Untitled

    Abstract: No abstract text available
    Text: TriQuint SEMICONDUCTOR. Advance Product Information 26- 34 GHz Medium Power Amplifier TGA1073A Prototype Part #, Production Part # TBD Key Features and Performance 0.25 um pHEMT Technology 19 dB Nominal Gain 25 dBm Nominal Pout @ P1dB -34.5 dBc IMR3 @ 15.5 dBm SCL


    OCR Scan     		PDF TGA1073A TGA1073A-EPU TGA1073A 480um 0007-inch