74lsxx
Abstract: A 2731 6N139 2731 6N138 HCPL-2730 HCPL-2731 74lxx 74hxx
Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL: 6N138 DUAL-CHANNEL: HCPL-2730 6N139 HCPL-2731 PACKAGE SCHEMATIC 8 VCC N/C 1 8 + 1 8 VCC VF1 + 2 1 7 VB _ 2 6 VO _ 7 V01 VF _ 3 3 6 V02 VF2 5 GND N/C 4 8 + 4 5 GND 8 1 6N138 / 6N139 1
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6N138
HCPL-2730
6N139
HCPL-2731
6N138
HCPL-2730
6N138/9
HCPL-2730/HCPL-2731
74lsxx
A 2731
6N139
2731
HCPL-2731
74lxx
74hxx
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Untitled
Abstract: No abstract text available
Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL: 6N138 DUAL-CHANNEL: HCPL-2730 6N139 HCPL-2731 PACKAGE SCHEMATIC 8 VCC N/C 1 8 + 1 8 VCC VF1 + 2 1 7 VB _ 2 6 VO _ 7 V01 VF _ 3 3 6 V02 VF2 5 GND N/C 4 8 + 4 5 GND 8 1 6N138 / 6N139 1
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6N138
HCPL-2730
6N139
HCPL-2731
6N138
HCPL-2730
6N138/9
HCPL-2730/HCPL-2731
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6n139
Abstract: No abstract text available
Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL: 6N138 DUAL-CHANNEL: HCPL-2730 6N139 HCPL-2731 PACKAGE SCHEMATIC 8 VCC N/C 1 8 + 1 8 VCC VF1 + 2 1 7 VB _ 2 6 VO _ 7 V01 VF _ 3 3 6 V02 VF2 5 GND N/C 4 8 + 4 5 GND 8 1 6N138 / 6N139 1
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6N138
HCPL-2730
6N139
HCPL-2731
6N138
HCPL-2730
6N138/9
HCPL-2730/HCPL-2731
6n139
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FAIRCHILD SMD MARKING
Abstract: FAIRCHILD 2731 6N139 6N138 application 74SXX hcpl 2730 datasheet 2731 optocoupler equivalent to 2730 smd marking f2 TTL 74LSxx
Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL: 6N138 DUAL-CHANNEL: HCPL-2730 6N139 HCPL-2731 PACKAGE SCHEMATIC 8 VCC N/C 1 8 + 1 8 VCC VF1 + 2 1 7 VB _ 2 6 VO _ 7 V01 VF _ 3 3 6 V02 VF2 5 GND N/C 4 8 + 4 5 GND 8 1 6N138 / 6N139 1
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6N138
HCPL-2730
6N139
HCPL-2731
6N138
HCPL-2730
6N138/9
HCPL-2730/HCPL-2731
FAIRCHILD SMD MARKING
FAIRCHILD 2731
6N139
6N138 application
74SXX
hcpl 2730 datasheet
2731
optocoupler equivalent to 2730
smd marking f2
TTL 74LSxx
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T6705
Abstract: NPN/PNP transistor sot223 zdt705 complementary npn-pnp power transistors ZDT605 ZDT6705 DSA0037253 DSA003725 transistor ic1A
Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 C1 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T6705 ABSOLUTE MAXIMUM RATINGS.
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ZDT6705
OT223)
T6705
-10mA*
-100mA,
20MHz
-10mA,
ZDT705
T6705
NPN/PNP transistor sot223
complementary npn-pnp power transistors
ZDT605
ZDT6705
DSA0037253
DSA003725
transistor ic1A
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T6702
Abstract: complementary npn-pnp ZDT6702 IC1010 IC-175 DSA003725 ZETEX medium power complementary transistors
Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 80
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ZDT6702
OT223)
T6702
T6702
complementary npn-pnp
ZDT6702
IC1010
IC-175
DSA003725
ZETEX medium power complementary transistors
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t605
Abstract: dual npn 500ma ic 324 ZDT605 DSA003724
Text: SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ZDT605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T605 PARAMETER SYMBOL Collector-Base Breakdown
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ZDT605
OT223)
t605
dual npn 500ma
ic 324
ZDT605
DSA003724
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zdt705
Abstract: T705 DSA003726
Text: SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ZDT705 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL T705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage
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ZDT705
OT223)
-120V
-120V,
zdt705
T705
DSA003726
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Untitled
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 February 1997 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP Collector-Base Voltage VCBO 80 -80 V
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ZDT6702
OT223)
T6702
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BDX548
Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8
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O-126
KSD985
KSD986
KSD1692
BD675A
BD677A
KSE800
KSE801
MJE800
TIP146
BDX548
KSB1023
power BJT
MJD117 Darlington
bdx33c
KSD5018 PNP
dpak npn
BD675A
BD677A
KSD1692
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20P2N-A
Abstract: M63834FP M63834KP 8-channel darlington array M63834GP pnp 8 darlington array BJE 80 diode
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63834FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DESCRIPTION The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP
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M63834FP/KP
500mA
M63834FP/KP
500mA)
20P2N-A
M63834FP
M63834KP
8-channel darlington array
M63834GP
pnp 8 darlington array
BJE 80 diode
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bdx340
Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Text: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8
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2N6284
bdx340
bdw 34 a
mj 1001
6282
TIP-142
BDV65
BDW93
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Bow94c
Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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BUZ11
SGSP492
MTP3055A
IRFP153
IRFP151
BUZ11S2
Bow94c
Bow93c
box 53c IC
SGS transistors
b0334
SGS6388
BO 336
b0333
BOW93B
SGSP222
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Bow94c
Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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BDX53
Bow94c
MJE 131
BD 147
tip 220
sgs mosfet
SGSD93G
b0333
B0680
bow93b
bdw 34 a
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bdx340
Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60
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2N6284
bdx340
Bow94c
b0334
Bow93c
b0333
BUZ10
d 6283 ic
2N6286
BUZ11
BUZ11S2
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bow94c
Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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IRF530FI
SGSP361
SGSP461
BUZ21
BUZ25
IRF142
IRF542
IRF542FI
IRF152
IRFP152
bow94c
BOW93C
SGSP591
MTP3055A
SGSD93G
SGSP381
SMD SJ 87
b0334
BUZ10
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X85C
Abstract: BDX 71 bdx85 3ALF bdx85b BDX86B X85B
Text: fZ T ^ 7 # S C S -T H O M S O N * ^ ( a & lO T ( g M S B D X 8 5 /8 5 A /8 5 B /8 5 C B D X 8 6 / 8 6 A /8 6 B /8 6 C POWER DARLINGTONS DESCRIPTION The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun
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M54586P
Abstract: m54586
Text: • bSMTflS? DD1S131 MITSUBISHI bn ■ MIT3 MITSUBISHI BIPOLAR DIGITAL ICs M54586P DGTL LOGIC 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The 54586P, 8-channel source driver, consists of 8 NPN and 8 PNP source type darlington transistors connected to
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DD1S131
M54586P
500mA
54586P,
500mA
M54586P
m54586
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Untitled
Abstract: No abstract text available
Text: v is s a s ? QoeaM si S G S - T U O M S O N î[L[lCT ^ [M D©S b B D 6 7 5 /7 5 A /7 7 /7 7 A /7 9 /7 9 A /8 1 B D 6 7 6 /7 6 A /7 8 /7 8 A /8 0 /8 0 A /8 2 S G S-THOMSON 3DE » MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679,
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BD675,
BD675A,
BD677,
BD677A,
BD679,
BD679A
BD681
O-126
BD676,
BD676A,
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m54586p
Abstract: 54586P 41N5 8-channel PNP darlington array
Text: M IT S U B IS H I BIPOLAR DIGITAL ICs M5 4 586P 8 -U N IT 500m A SOURCE T Y P E DARLINGTON TR A N S ISTO R ARRAY DESCRIPTION The 54586P, 8-channel source driver, consists of 8 NPN PIN CONFIGURATION TOP VIEW ¡nd 8 PNP source type darlington transistors con necte d to
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54586P,
500mA
41N5IN
m54586p
54586P
41N5
8-channel PNP darlington array
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M54581P
Abstract: No abstract text available
Text: M IT S U B IS H I BIPOLAR DIGITAL ICs ! M54581P 8 -U N IT SOOmA SOURCE T Y P E DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW rh e M 5 4 5 8 1 P , 8 -c h a n n e l source driver, consists of 8 NPN and 8 P N P source ty p e darlington transistors co n n ec te d to
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M54581P
M54581P
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702 TRANSISTOR
Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS
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MJE700/701
MJE800/801/802/803
MJE702/703
702 TRANSISTOR
702 P TRANSISTOR
MJE700
702 Z TRANSISTOR
transistor 702
transistor k 702
BVCEO 2000
TRansistor 701
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D2580
Abstract: ULN2074 Interface Circuit - Relay and Lamp - Driver uln2075
Text: ULN2074, ULN2075 QUADRUPLE HIGH-CURRENT DARLINGTON SWITCHES D 2 5 8 0 , M A Y 1 9 8 0 - REVISED SEPTEMBER 1 9 8 6 NE PACKAG E • Output Collector Current . . . 1.5 A Max • 2-W Dissipation Rating • High Output-Voltage Capability • Output Sink- or Source-Current Capabilities
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ULN2074,
ULN2075
D2580,
1980-REVISED
ULN2074
ULN2075
D2580
Interface Circuit - Relay and Lamp - Driver
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DIODE 3LU
Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Text: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors
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023SbOS
-50V-
Tmm1S25Â
DQG4420
DIODE 3LU
D959
Q62702-D961
Q62702-D959
3lu diode
BD 862
Diode 864
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