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    8 BITS Search Results

    8 BITS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    DAC5311IDCKRQ1 Texas Instruments Automotive 8bit, Single Channel, 80uA, 1.8V-5.5V DAC 6-SC70 -40 to 85 Visit Texas Instruments Buy
    DAC5311IDCKT Texas Instruments 8bit, Single Channel, 80uA, 1.8V-5.5V DAC in SC70 Package 6-SC70 -40 to 125 Visit Texas Instruments Buy
    DAC5311IDCKR Texas Instruments 8bit, Single Channel, 80uA, 1.8V-5.5V DAC in SC70 Package 6-SC70 -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    8 BITS Price and Stock

    Lattice Semiconductor Corporation CORR-8BIT-SC-UT2

    SITE LICENSE CORRELATOR SC/SCM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CORR-8BIT-SC-UT2 No Container 1
    • 1 $12954
    • 10 $12954
    • 100 $12954
    • 1000 $12954
    • 10000 $12954
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    Newark CORR-8BIT-SC-UT2 Bulk 1
    • 1 $15436.85
    • 10 $15005.05
    • 100 $14141.45
    • 1000 $14141.45
    • 10000 $14141.45
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    Farnell / Duratool D0488- BIT SET -5032

    Screw Driver Bit Set, 32Pc, Steel Kit Contents 30Pcs Of 1/4 Inch 25Mm Length Hex Power Bits & 1Pc 66Mm Quick Change Bit Holder Rohs Compliant: Yes |Duratool D0488- BIT SET -5032
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark D0488- BIT SET -5032 Kit 1 1
    • 1 $23.32
    • 10 $23.32
    • 100 $23.32
    • 1000 $21.2
    • 10000 $20.5
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    Lattice Semiconductor Corporation CORR-8BIT-SC-U2

    8-Bit Correlator For Latticesc/M - Single Design License Rohs Compliant: Yes |Lattice Semiconductor CORR-8BIT-SC-U2
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    Newark CORR-8BIT-SC-U2 Bulk 1
    • 1 $5140.85
    • 10 $4997.05
    • 100 $4709.45
    • 1000 $4709.45
    • 10000 $4709.45
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    Phoenix Contact SF-BIT-TX 8-50

    Screw bit - Torx<sup>®</sup> - E6.3-1/4" drive - size: TX 8 x 50 mm - hardened - suitable for holder according to DIN 3126-F6.3/ISO 1173
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SF-BIT-TX 8-50
    • 1 -
    • 10 $5.26
    • 100 $5
    • 1000 $5
    • 10000 $5
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    Phoenix Contact SF-BIT-HEX 8-50

    Screw bit - hexagon - E6.3-1/4" drive - size: Hex 8 x 50 mm - hardened - suitable for holder according to DIN 3126-F6.3/ISO 1173
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SF-BIT-HEX 8-50
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    • 100 $5.17
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    8 BITS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH1M08TNA-85L,-10L,-12L,-15L/ MH1M08TNA-85H,-10H,-12H,-15H 8 3 8 8 6 0 8 -B IT 1 0 4 8 5 7 6 -W 0 R D B Y 8-BIT CM OS STATIC RAM DESCRIPTION The M H 1 M 0 8 T N A is a 8 3 8 8 6 0 8 bits C M O S static RA M PIN C O N FIG U R ATIO N (TOP V IEW )


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    MH1M08TNA-85L -15L/ MH1M08TNA-85H 150ns PDF

    UG38C3288HSG

    Abstract: No abstract text available
    Text: UG38C324 8 8HSG 32M Bytes (8M x 32) DRAM 72Pin SODIMM based on 8M X 8 General Description Features The UG38C324(8)8HSG is a 8,388,8 bits by 32 SODIMM module. The UG38C324(8)8HSG is assembled using 4 pcs of 8M x 8 4K/8K refresh DRAMs in 32-pin TSOP package mounted on


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    UG38C324 72Pin 32-pin 72pin) 1000mil) Re-Tek-775 UG38C3288HSG PDF

    TC518128B

    Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
    Text: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes


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    TC518128B TC5181 TC518128BPL SPL/BFL/BFWL/BFTL-70/80/10 TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1 TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG58W664 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58W664(8)8HK(S)G is a 8,388,8 bits by 64 EDO DRAM module. The UG58W664(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in a 32 pin 400


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    UG58W664 168Pin 128ms 1100mil) 450Max 43Max) 150Max PDF

    Untitled

    Abstract: No abstract text available
    Text: UG58W644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58W644(8)8HK(S)G is a 8,388,8 bits by 64 EDO DRAM module . The UG58W644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ


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    UG58W644 168Pin 400mil ABT16244 240mil 168-pin 1000mi 190Max PDF

    26c18

    Abstract: ST2100 ST2101 1103h MUX41 TABLE10-1 1185H PCC5
    Text: ST Sitronix ST2100 8 BIT Microcontroller with 2M bytes ROM PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES „ „ „ „ „ „ „ „ „ „ 8-bit static pipeline CPU ROM: 2M x 8 bits RAM: 4K x 8 bits External memory control up to 8M x 8 bits


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    ST2100 timer/16-bit 128-level ST2101 A22/CSB0, Page18 2002-Jul-25 26c18 ST2100 1103h MUX41 TABLE10-1 1185H PCC5 PDF

    518128

    Abstract: 518128apl TC518128
    Text: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V


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    TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV 518128APLyAFL/AFW L/AFTL-80LV/1 OLV/12LV 518128APL/AFL/AFW L/AFTL-80LV/1O LV/12LV 2SA1015 518128 518128apl TC518128 PDF

    SN74LS498

    Abstract: 74LS498 SN54/74LS498
    Text: 8-B it Shift Register S N 5 4 /7 4 L S 4 9 8 Features/ Benefits Ordering Information • 8-bit shift register or serial-to-parallel and parallel-toseriai applications • 8 bits match byte boundaries • Bus-structured pinout PART NUMBER PACKAGE SN54LS498


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    SN54LS498 SN74LS498 24-pin SN54/74LS498 16-Bit SN74LS498 74LS498 SN54/74LS498 PDF

    P413

    Abstract: p113 p114 100-PIN P310 P311 P312 QFP100-P-1420 SM6004 SM6006
    Text: PRODUCT INFORMATION SM6004/SM6006 16-Bit Single-Chip Microcomputers FEATURES • ROM capacity: – 61,440 x 8-bits SM6004 – 126,976 × 8-bits (SM6006) • RAM capacity: – 2,048 × 8-bits (SM6004) – 3,584 × 8-bits (SM6006) • External memory expansion function


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    SM6004/SM6006 16-Bit SM6004) SM6006) 16-bit 16-bits 16-bits, P413 p113 p114 100-PIN P310 P311 P312 QFP100-P-1420 SM6004 SM6006 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C 5 l8 5 1 2 F L / n , / F T I , / T R L 7 0 L V / 8 0 L V / l0 L V SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 5 1 2 P L is a 4M bit high speed C M O S p se udo sta tic RAM organized as 5 2 4 ,2 8 8 w o rd s b y 8 bits. T h e T C 5 1 8 5 1 2P L


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    D-194 005bb41 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV V0H1/01-1/08 D-195 PDF

    Untitled

    Abstract: No abstract text available
    Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data


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    L6116 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH51208TNA-85L,- 10L,- 12L,- 15L/ MH51208TNA-85H,-10H,-12H,-15H 4 194304-BIT 5 2 4 2 8 8 -WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M H 5 1 2 0 8 T N A is a 4 1 9 4 3 0 4 bits C M OS static R A M PIN CONFIGURATION (TOP VIEW) module organized as 524288-w ords by 8-bits. It consists


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    MH51208TNA-85L MH51208TNA-85H 194304-BIT 524288-w PDF

    LH5116H

    Abstract: No abstract text available
    Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode


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    LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H PDF

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


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    E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M PDF

    siemens modules GR 60 48 V 120 A

    Abstract: 7ba0 CDC2510A
    Text: SIEMENS 3.3V 168 pin Registered SDRAM Modules 64MB, 128MB, 256MB & 512MB Density HYS72V8200G R-8 HYS72V8201GR-8 HYS72V16200GR-8 HYS72 V32200G R-8 HYS72V32201 GR-8 HYS72 V64200G R-8 HYS72 V64220G R-8 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module


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    128MB, 256MB 512MB HYS72V8200G HYS72V8201GR-8 HYS72V16200GR-8 HYS72 V32200G HYS72V32201 siemens modules GR 60 48 V 120 A 7ba0 CDC2510A PDF

    D1138 transistor data sheet

    Abstract: D1138 transistor D1138 micronas frc APC UPS CIRCUIT DIAGRAM Transistor BC 227 fbas H12F DC Micronas visual i2c icl 7231
    Text: PRELIMINARY DATA SHEET MICRONAS Edition Nov. 9, 1998 6251-432-2PD VPX 3225D, VPX 3224D Video Pixel Decoders MICRONAS VPX 3225D, VPX 3224D PRELIMINARY DATA SHEET Contents Page Section Title 6 7 1. 1.1. Introduction System Architecture 8 8 8 8 8 8 8 8 10 10


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    6251-432-2PD 3225D, 3224D D1138 transistor data sheet D1138 transistor D1138 micronas frc APC UPS CIRCUIT DIAGRAM Transistor BC 227 fbas H12F DC Micronas visual i2c icl 7231 PDF

    TC518512FTL

    Abstract: TC518512 TC518512PL
    Text: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes


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    TC518512PL TC518512PL/FL/FTL/TRL-70/80/10 D-166 TC518512FTL TC518512 PDF

    TRANSISTOR D206

    Abstract: 8512A transistor D209 LA 8512 TC51V8512
    Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F


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    TC51V8512AF/AFT/ATR-12/15 D-212 D-213 TRANSISTOR D206 8512A transistor D209 LA 8512 TC51V8512 PDF

    nec 424800

    Abstract: RAS 0501
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    uPD42S4800 uPD424800 juPD42S4800 28-pin PD42S4800-60, /JPD42S4800-70, iPD42S4800-80, /1PD42S4800-10, VP15-207-2 nec 424800 RAS 0501 PDF

    00S73

    Abstract: 6805L IC-3433 KM 3502 P
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT u P D 4 2 S 16 8 0 5 L , 4 2 1 6 8 0 5 L / 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs with optional hyper page


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    uPD42S16805L uPD4216805L iiPD42S16805L, 4216805L 28-pin /iPD42S16805L-A60, 4216805L-A60 IPD42S16805L-A70, 4216805L-A70 00S73 6805L IC-3433 KM 3502 P PDF

    tms jl 27C256-15

    Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
    Text: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS


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    TMS27C256 TMS27PC256 SMLS25BH- 27C/PC256-10 27C/PC256-12 27C/PC256-15 27C/PC256-17 27C/PC256-20 27C/PC256-25 400-mV tms jl 27C256-15 tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15 PDF

    27C020-12

    Abstract: 27C020-15 TMS27FC020 PC020-10 27pcq
    Text: TMS27C020 262144 BY 8-BIT UV ERASABLE TMS27PC020 262144 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES mS020C-N O V EM BER 1990 - REVISED SEPTEMBER 1997 Organization . . . 262144 by 8 Bits Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs


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    TMS27C020 TMS27PC020 mS020C-N 32-Pin 32-Lead 27C/PC020-10 27C/PC020-12 27C/PC020-15 27C/PC020-20 27C/PC020-25 27C020-12 27C020-15 TMS27FC020 PC020-10 27pcq PDF

    IN914

    Abstract: W27E520 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90
    Text: Advance Information W27E520 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex


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    W27E520 W27E520 IN914 W27E520S-70 W27E520S-90 W27E520W-70 W27E520W-90 PDF

    isl24007

    Abstract: ISL24005 ISL24016 ISL24813 ISL24822 isl248 ISL24821 ISL29010 ISL78010 APPLICATION NOTES ISL24008
    Text: Display ICs 8 2008 P RODUCT S ELECTION GUIDE Display ICs pg. 8-1 VCOM and Gamma Buffers (pg. 8-2) Integrated DC/DC Regulators (pg. 8-4) Programmable VCOM Amplifiers (pg. 8-2) Ambient Light Sensors (pg. 8-5) OLED Power ICs (pg. 8-6) Level Shifters (pg. 8-7)


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    1-888-INTERSIL isl24007 ISL24005 ISL24016 ISL24813 ISL24822 isl248 ISL24821 ISL29010 ISL78010 APPLICATION NOTES ISL24008 PDF