FBAS Search Results

pn junction diode application

Abstract: power Schottky bridge FBAS70DW-04 marking K74
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

TDA2577

Abstract: 068AF tda 83
Contextual Info: 80 N . K , J C g O M Tor odchylania H i stopieñ sterowarda V U„=26V Ustawienie szerokosci obrazu 33k U„= 180k wypr.14 Ukiadowo odchylanie H i V Im puls powrotu H Id en tyfikacja 100n /1 6 V J Im puls s a n d c a s tle S ygnal FBAS >4m A ^ 220Q 1k R eg ulacja czçst. H

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

FBAS70DW-05

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

TDA3521

Abstract: dwa 108 ip108 dwa 108 a UP-3
Contextual Info: unia opöiniaj§ca 64fis W ejS cie sygnahj FBAS DL 701 Wejäcie sygnalu chrominancji 680Q ^ lOOn /16V - R-Y 330k 680Q -j- — Detektor SECAM U io o p 3,3 L2 2 .2M 100p i5 p : 6800 2,8piH 470p TDA 3521 X T T 47n Jh h J J 3,9k 22k ( a h 12k S J 150p 2% lO u •

transistor k43

Abstract: FBAS40TW marking k43 diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

FBAS70DW-06

Abstract: pn junction diode application
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

K73 Package

Abstract: FBAS70TW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

marking k47

Abstract: SCHOTTKY BARRIER BRIDGE RECTIFIERS FBAS40BRW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Marking k45

Abstract: FBAS40DW-05 k45 diode diode k45
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

Contextual Info: AA 1.010 O l C |ACI3|BO A A A EH INDEX AREA .1 20 MAX A .080 MAX .0 0 8 /.0 1 2 —— REF * 1 / 0 0 7 / .0 1 0 WITH PLATING .0 0 7 / .0 0 9 V ! .0 0 8 /.0 1 1 \ SECTION A - A A fBASE METAL SEATING PWNE REVISIONS DCN R EV DESCRIPTION DATE A PP R O VED 25338

k44 transistor

Abstract: transistor k44 FBAS40DW-04
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES

BAS70BRW

Abstract: FBAS70BRW
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES

inverter omron 3G3EV

Abstract: sysdrive 3G3EV inverter omron 3G3EV 3g3EV omron inverter Sysdrive 3G3EV 3G3EV inverter 3G3EV A2004 omron inverter 11 kW 3g3ev 3G3EV-A2007 inverter omron 3G3EV -AB004 MA
Contextual Info: USER’S MANUAL SYSDRIVE 3G3EV SERIES Standard Models Compact Low-noise Inverter Thank you for choosing this SYSDRIVE 3G3EV-series product. Proper use and handling of the product will ensure proper product performance, will length product life, and may prevent possible accidents.

TEF6903A

Abstract: TEF6903AH sfp450 sfp450h QFP80 nxp car fm tuner VU-METER ultrasonic frequency division nxp fm demodulator
Contextual Info: TEF6903A Integrated car radio Rev. 03 — 3 April 2008 Product data sheet 1. General description The TEF6903A is a single-chip car radio integrated circuit with FM/AM tuner, stereo decoder, weak signal processing and audio processing. Radio Data System RDS /Radio

TEF6904A

Abstract: TEF6904AH FAF 37 DIODE analog VU-METER 36121E sfp450h QFP80 ultrasonic sound generator ic SFP450
Contextual Info: TEF6904A Integrated car radio Rev. 03 — 20 March 2008 Product data sheet 1. General description The TEF6904A is a single-chip car radio integrated circuit with FM/AM tuner, stereo decoder, weak signal processing and audio processing. FM tuner with double conversion to IF1 = 10.7 MHz and IF2 = 450 kHz with integrated

Contextual Info: Freescale Semiconductor Advance Information Document Number: MM912_634D1 Rev. 8.0, 11/2012 Integrated S12 Based Relay Driver with LIN MM912_634 48-PIN LQFP, 7.0 mm x 7.0 mm AE SUFFIX: Exposed Pad Option AP SUFFIX: Non Exposed Pad Option The MM912G634 48 kB and MM912H634 (64 kB) are