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Contextual Info: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories. QUICK REFERENCE DATA |
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002b2 BAV10 DO-35 BAV10 bb53T31 7Z10681 100XL 400mA |