Untitled
Abstract: No abstract text available
Text: b7E D SAMSUNG ELECTRONICS INC • 7Sb414E 001774E 156 KM79C86 CMOS SRAM 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 bit Synchronous Static Ran
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7Sb414E
001774E
KM79C86
KM79C86
Q0177SQ
KM79C86_
GD177S1
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Untitled
Abstract: No abstract text available
Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41V4000DJ
b414E
7Tb414E
003410b
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns
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KM44C1OOOBSL
KM44C1000BSL-6
110ns
KM44C1000BSL-7
130ns
KM44C1000BSL-8
150ns
cycles/256ms
20-LEAD
0Q157G5
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Untitled
Abstract: No abstract text available
Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
KM416V256DJ
0G322tM
QG322bS
7Tb4142
00322bfci
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