SSM05
Abstract: No abstract text available
Text: R S M ELECTRON/SENSITRON 1ÔE D • 7S03bSD D O G G S ? 11] 5 i T - O '3 - 1 7 SENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 FAX 516 242 9798 TECHNICAL SPECIFICATIONS 1000 VOLT 60 NANOSECOND SURFACE MOUNT
|
OCR Scan
|
7S03bSD
MIL-S-19500
SSM05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ±T SENSITRON S M ELECTRON/SENSITRO 5ME D • 7S03bSD 0000134 Sbb ■ SEN SHD3001P SHD3002P _ SEMICONDUCTOR T -0 3 -1 9 TECHNICAL DATA SHEET DATASHEET 101 REVISION B TO-254 STYLE 30 AMP 200/300 VOLT 35 NANOSECOND
|
OCR Scan
|
7S03bSD
SHD3001P
SHD3002P
O-254
SHD3001P/SHD3002P
|
PDF
|
2222l
Abstract: SL1515 SL1515HEL JANTX 2222 SL15100L SL1560FRL SL1560S7L single phase full controlled rectifier
Text: 'T ^ 3 < > r7 R S M ELECTRON/SENS IT RON 1SE D | 7S03bSD 00007=15 T | SENS/TRON SEMICONDUCTOR 221 l/Vesf Industry C ourt • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 TECHNICAL SPECIFICATIONS AVAILABLE WITH JAN, JANTX OR
|
OCR Scan
|
7S03bSD
75Q3tS0
2222l
SL1515
SL1515HEL
JANTX 2222
SL15100L
SL1560FRL
SL1560S7L
single phase full controlled rectifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5- Half Bridge MOSFET Module With Gate Driver: Description: Features: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices
|
OCR Scan
|
7S03bSD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENS,TR0N DATASHEET 134 REVISION— SHD SERIES SURFACE MOUNT SCHOTTKY RECTIFIERS SINGLE RECTIFIERS TYPE NUMBER PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT Tc = 100°C MAXIMUM FORWARD VOLTAGE SHD1151 25°C 125°C MAXIMUM MAXIMUM REVERSE MAXIMUM JUNCTION
|
OCR Scan
|
SHD1151
SHD1151B
SHD1151C
SHD1144
|
PDF
|
48v 150A mosfet switch
Abstract: No abstract text available
Text: 8- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the
|
OCR Scan
|
7S03bS0
48v 150A mosfet switch
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4- Half Bridge MOSFET Module With Gate Driver: Features: Description: • These power modules are suited for high reliability switching applications such as motion control, U PS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices
|
OCR Scan
|
|
PDF
|
SHDG1029
Abstract: SHDG1028 SHDG1030 SHDG1031 SHDG1032 SHDG1033 SHDG1034 SHDG1035 SHDG1037 SHDG1036
Text: 12.6- Hyper Fast IGBT Devices with a Fast Reverse Recovery Diode: IGBT Characteristics: Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 500 600 24 24 48 48 96
|
OCR Scan
|
SHDG1028
SHDG1029
O-254
O-254
rO-258
75G3bSG
SHDG1030
SHDG1031
SHDG1032
SHDG1033
SHDG1034
SHDG1035
SHDG1037
SHDG1036
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6- H-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices
|
OCR Scan
|
D001102
|
PDF
|