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    SHDG1052

    Abstract: SHDG1053 SHDG1054 SI591
    Text: 12.10- Low VcE{sat j Improved SCSOAIGBT Devices: IGBT Characteristics: Continuous Collector Current lc @Tc=90°C Continuous Collector Current lc @ T c=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 600 600 1000 20 30 25 40 50 50 80 100


    OCR Scan     		PDF SHDG1052 SHDG1053 SHDG1054 O-254 O-258 l50/3ft1\RSr. SI591

    SHDG1029

    Abstract: SHDG1028 SHDG1030 SHDG1031 SHDG1032 SHDG1033 SHDG1034 SHDG1035 SHDG1037 SHDG1036
    Text: 12.6- Hyper Fast IGBT Devices with a Fast Reverse Recovery Diode: IGBT Characteristics: Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 500 600 24 24 48 48 96


    OCR Scan     		PDF SHDG1028 SHDG1029 O-254 O-254 rO-258 75G3bSG SHDG1030 SHDG1031 SHDG1032 SHDG1033 SHDG1034 SHDG1035 SHDG1037 SHDG1036