cy3341
Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194
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7C147
7C123
7C148
7C149
7C150
7C189
7C190
7C122
7C167A
7C168A
cy3341
64K X 4 CACHE SRAM
CY7C190
pasic380
cy7c189
palce22v10 programming guide
palce16v8 programming algorithm
STATIC RAM 6264
vhdl code for 8-bit parity checker
64x18 synchronous sram
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81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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CY7C171A
Abstract: CY7C172A
Text: CY7C171A 7C172A Features D D D The CY7C171A and 7C172A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits with separate I/O. Easy memory expansion is provided by an active LOW chip enable CE and threeĆ state drivers. They have an automatic powĆ
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CY7C171A
CY7C172A
CY7C171A
CY7C172A
7C171A)
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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CY7C171A
Abstract: CY7C172A
Text: CY7C171A 7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power
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CY7C171A
CY7C172A
7C171A)
CY7C171A
CY7C172A
7C171A
24-Lead
300-Mil)
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7c17
Abstract: CY7C171A CY7C172A C171A
Text: 1CY 7C17 2A CY7C171A 7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW
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CY7C171A
CY7C172A
7C171A)
CY7C171A
CY7C172A
7c17
C171A
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CY7C171-45VC
Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
Text: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak ing chip enable CE LOW, while write en able (W E) remains H IG H . U nder these con
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7C171)
CY7C171
CY7C172
4096x4
stayY7C172-45PC
CY7C172-45DC
CY7C172-45LC
CY7C172-45VC
CY7C172-45DMB
CY7C172-45LMB
CY7C171-45VC
7C172-35
CY7C171-35PC
CY7C171-45DMB
A10C
CY7C171
CY7C172
7C171-25
CY7C172-35PC
2272 aq
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A r^ y p p p cc Features F unctional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power
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CY7C171A
CY7C172A
7C171A)
7C171A
7C172A
tADvI13)
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CY7C171A
Abstract: CY7C172A
Text: CYPRESS SEMICONDUCTOR bSE J> SSÖ'ibbB GOD'iöflL» TQM CYP CY7C171A 7C172A 4K x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected The CY7C171A and 7C172A are highperformance CMOS static RAMs orga
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CY7C171A
CY7C172A
7C171A)
tADvt13)
7C171A
38-00104-C
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CY7C171A
Abstract: CY7C172A CY7C171A-25PC
Text: CY7C171A 7C172A CYPRESS 4K x 4 Static RAM with Separate I/O Features w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power* down when deselected • CMOS for optimum speed/power • High speed
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CY7C171A
CY7C172A
CY7C171A)
enabl45DMB
24-Lead
300-Mil)
CY7C171A-25PC
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7C172
Abstract: No abstract text available
Text: CY7C171 7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • A u tom atic pow er-dow n w hen d esele cted T h e C Y 7C 171 and C Y 7C 1 7 2 are high-per form an ce C M O S static R A M s organ ized as 4096 by 4 bits w ith sep arate I/O . E asy
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CY7C171
CY7C172
38-00036-E
7C172
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SOJ 24
Abstract: No abstract text available
Text: CY7C171A 7C172A r^y p p rc c SEMICONDUCTOR Features 4Kx 4 Static RAV RAM Separate I/O Reading the device is accomplished by taking chip enable CE LOW, while write enable The CY7C171A and 7C172A are high- (WE) remains HIGH. Under these condi performance CMOS static RAMs orga tions the contents of the memory location
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CY7C171A
CY7C172A
7C171A)
CY7C172A
tADvl13'
SOJ 24
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he CY7C171A and 7C172A are highperformance CMOS static RAMs orga
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PDF
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CY7C171A
CY7C172A
7C172A
7C171A
38-00104-B
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Untitled
Abstract: No abstract text available
Text: CY7C171 7C172 CYPRESS ,.= ^ = SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed T he CY7C171 and 7C172 are highperform ance CM OS static RAM s orga nized as 4096 by 4 bits with separate I/O.
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CY7C171
CY7C172
CY7C171
CY7C172
7C171)
7C171
38-00036-E
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TAA 981
Abstract: CY7C171A CY7C172A
Text: CY7C171A 7C172A CYPRESS Features 4K x 4 Static RAM with Separate I/O w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power* down when deselected • CMOS for optimum speed/power • High speed
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CY7C171A
CY7C172A
CY7C171A)
CY7C172A
7C171A
38-00104-D
TAA 981
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e CY7C171A and 7C172A are highperform ance C M O S static R A M s orga nized as 4096 by 4 bits with separate I/O .
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CY7C171A
CY7C172A
7C17IA)
7C172A
7C171A
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CY7C171-45VC
Abstract: CY7C171-35PC 7c172
Text: CY7C171 7C172 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e CY7C171 and 7C172 are highperform ance CM OS static RAM s orga nized as 4096 by 4 hits with separate I/O. Easy memory expansion is provided by an
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CY7C171
CY7C172
7C171)
7C171
38-00036-E
CY7C171-45VC
CY7C171-35PC
7c172
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P13AB
Abstract: 7C171A
Text: Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power — 93 mW • TTL-eompatible inputs and outputs • Capable of withstanding greater than
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7C171A)
CY7C171Aand
CY7C172A
CY7C171A
P13AB
7C171A
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A 0CYPRESS Features 4K x 4 Static RAM with Separate I/O w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power-down when deselected T he CY7C171A and 7C172A are highperform ance CM OS static RAM s orga
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CY7C171A
CY7C172A
7C172A
CY7C172A
7C171A
0014fl2fl
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power
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CY7C171A
CY7C172A
7C171A)
7C172A
7C171A
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CY7C171A
Abstract: CY7C172A K73 Package
Text: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G CY7C171A 7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns
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CY7C171A
CY7C172A
7C171A)
CY7C172A
redK73
T-46-23-08
awe1131
K73 Package
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Untitled
Abstract: No abstract text available
Text: CY7C171A 7C172A CYPRESS F e a tu re s 4K x 4 Static RAM with Separate I/O written into the m emory location specified on the address pins A<> through A n . F u n c tio n a l D escrip tio n • Automatic power-down when deselected • CMOS for optimum speed/power
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CY7CI71A)
CY7C171A
CY7C172A
CY7C172A
7C171A
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CY7C171-45DMB
Abstract: CY7C171-45LC
Text: CY7C171 7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power The CY7C171 and 7C172 are high-performance CMOS static RAMs organized as
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CY7C171
CY7C172
7C171)
7C171
38-00036-E
CY7C171-45DMB
CY7C171-45LC
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