7C SMD TRANSISTOR Search Results

smd diode T42

Contextual Info: SPD 30N03L Infineon technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode V ^DS Drain-Source on-state resistance WDS on 0.012 f i 30 A b Continuous drain current • Avalanche rated 30 Drain source voltage • Logic Level

7C SMD TRANSISTOR

Contextual Info: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A

SPB80N03L

Abstract: spp60n
Contextual Info: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q

Contextual Info: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

Contextual Info: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated

BUZ100

Abstract: to 220 smd BUZ100 SIEMENS
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package

m574

Contextual Info: BUZ 103 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ103 50 V Id 40 A ^DS on Package Ordering Code

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

transistor marking smd 7c

Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
Contextual Info: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3

Contextual Info: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide bestfibs on in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5

SPUX3N60S5

Abstract: on semiconductor marking code dpack VPT09050
Contextual Info: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature

Contextual Info: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package

A4t 29 smd

Abstract: smd a4t
Contextual Info: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current

smd transistor A7 sot 23

Contextual Info: BSP 89 Inf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ^DS k> WDS(on) Package Marking BSP 89 240 V 0.36 A 6Q SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Tape and Reel Information

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

siemens 12V small relays

Abstract: transistor z15 smd IN67 BTS650PE3230 BTS650P rlu 210 cd 4534 FET RV power transistor X 52 siemens profet
Contextual Info: fi2 3 S b D S SIEM ENS □ D ‘ì 2 tl S 4 AM D PROFET Target Data Sheet BTS 650 P Smart Highside High Current Power Switch Features Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump

Contextual Info: SIEMENS PROFET Target Data Sheet BTS660P Smart Highside High Current Power Switch Vbb AZ 70 Output clamp Operating voltage VÒN(CL) 60 Vbb(on) On-state resistance RON Load current (ISO) /L(ISO) 44 A Short circuit current limitation Current sense ratio /L(SCp)