780-5 TRANSISTOR Search Results

transistor NF j1 marking code

Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

13786

Abstract: L1320
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

NV SMD TRANSISTOR

Abstract: AN1294 UHF rfid reader ma706
Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■

81A7031-50-5F

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

transistor BC148

Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r

IEC134

Abstract: LAE4002S
Contextual Info: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

Contextual Info: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •

BD775

Abstract: BD779 transistor BD780 BD776 BD780 BD777 BD778
Contextual Info: MOTOROLA Order this document by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain

Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz

tf5r21zz

Contextual Info: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2

SH3201

Abstract: DIAGRAM VOLTAGE REGULATOR 28 volts HXK32011XX J-10 SH3200 ScansUX984
Contextual Info: SH3201 ADJUSTABLE NEGATIVE DC VOLTAGE REGULATOR FAIRCHILD HYBRID CIRCUIT • SHORT CIRCUIT PROTECTED PHYSICAL DIM ENSIONS • BROAD RANGE OF OUTPUT VOLTAGES . . . -8 . 5 V TO - 3 0 V in accordance with JE D E C TO-99 outline • LOAD CURRENTS 0 TO 50 mA AND 5.0 AMPS USING AN EXTERNAL PASS TRANSISTOR

transistor b2u

Contextual Info: Section 12: SEMISTACK Power Semiconductor Assemblies with Diodes, Thyristors, SEMIPACK Modules or SEMIPONT Bridge Rectifiers as well as SEMITRANSIGBT, MOSFET and Darlington Transistor Modules from 10 to 1000’s of Amps; 12 Voc to over 1000 Vrms mains using

BD775

Abstract: BD780 BD779 bd777 BD776 BD778 Case 77-08
Contextual Info: NPN Plastic Darlington Complementary Silicon Power Transistors BD777 PNP BD776 BD778 . . . designed for general purpose amplifier and high–speed switching applications. BD780 * • High DC Current Gain • • • hFE = 1400 Typ @ IC = 2.0 Adc Collector–Emitter Sustaining Voltage — @ 10 mAdc

2SD780

Abstract: 1DW transistor TRANSISTOR 1dw
Contextual Info: 2 S D 7 8 0 ,2 S D 7 8 0 R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2SB736,2SB736R PACKAGE DIMENSIONS • High DC Current Gain: h FE = 200 TYP. <VCE = 1.0V, l c =50mA in m illim e te rs inches) 2 5 81 (0 098J

74ACxxx

Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
Contextual Info: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect

NEC D780

Abstract: 2SD78 d780 nec 2sd780 D780A 780a
Contextual Info: SILICON TRANSISTORS 2 S D 7 8 0 ,2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTIO N P A C K A G E D IM EN SIO N S The 2SD780, 2S D 780 A are designed fo r use in small ty p e equipm ents espe- in m illim eters

d3008

Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz
Contextual Info: A d v a n ced P o w er Te c h n o l o g y * ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. Pi F OPERATION 1-15MHz POWER MOS IV N -C H A N N EL ENHANCEMENT MODE RF POWER MOSFET P f& Q M M The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

BD779

Abstract: TRANSISTOR B 834 bd777 BD776
Contextual Info: MOTOROLA Order this document by BD777/D SEMICONDUCTOR TECHNICAL DATA NPN BD777 Plastic Darlington Com plem entary Silicon Power Transistors PNP BD776 BD778 . . . designed for general purpose amplifier and high-speed switching applications. • • • •

Contextual Info: ADVANCED POW ER Te c h n o l o g y • ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

pnp 8 transistor array

Abstract: ALA200 PNP UHF transistor npn 8 transistor array 1100 RESISTOR ARRAY 003FI
Contextual Info: Preliminary Data Sheet fg p AT&T 9?^¿93 ALA200 UHF Linear Array C om plem entary NPN and PNP Transistors Description The ALA200 UHF Linear Array is a semi-custom integrated circuit consisting of very high-frequency uncommitted vertical NPN and PNP transistors, capacitors, and ion-implanted resistors. Designed on a

GL RESISTOR ARRAY

Abstract: ALA200 1100 RESISTOR ARRAY
Contextual Info: PraMMnary Data Sheet fjp A T & T A L A 200 U H F L in e a r A rray C o m p le m e n ta ry N P N and P N P T ran sistors Description The ALA200 UHF Linear Array is a semi-custom integrated circuit consisting of very high-frequency uncommitted vertical NPN and PNP transistors, capacitors, and ion-implanted resistors. Designed on a

F624-19Q1

Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz class e and 13.56MHz F624-19 power amplifier 13.56MHz 13.56MHZ mosfet
Contextual Info: ADVANCED W /Æ P o w e r M Te c h n o lo g y • R ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz POWER MOS IV® N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T he A R F 444 and AR F445 co m prise a sym m etric pair o f RF pow er transistors designed fo r push-pull scientific,

Contextual Info: A dvanced P ow er Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV« N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ T he A R F 440 and ARF441 com prise a sym m etric pair of RF pow er transistors designed fo r n a rro w -b an d push-pull