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    76143P Price and Stock

    Rochester Electronics LLC HUF76143P3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76143P3 Bulk 430
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    • 1000 $0.7
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    Fairchild Semiconductor Corporation HUF76143P3

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    Bristol Electronics HUF76143P3 3,200
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    HUF76143P3 19 3
    • 1 -
    • 10 $1.875
    • 100 $1.2188
    • 1000 $1.2188
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    Rochester Electronics HUF76143P3 108,627 1
    • 1 $0.6717
    • 10 $0.6717
    • 100 $0.6314
    • 1000 $0.5709
    • 10000 $0.5709
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    Intersil Corporation HUF76143P3

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    Bristol Electronics HUF76143P3 25
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    76143P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76143S

    Abstract: 76143P HUF76143P3 HUF76143S3S HUF76143S3ST TB334 6143P3
    Text: 76143P3, HUF76143S3S Semiconductor Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF7 are manufactured using the innovative UltraFET process. 6143P3 This advanced process technology


    Original     		PDF HUF76143P3, HUF76143S3S 6143P3 HUF76 143S3S HUF76143 76143S 76143P HUF76143P3 HUF76143S3S HUF76143S3ST TB334 6143P3

    76143S

    Abstract: 76143P TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334 diode 98e
    Text: 76143P3, HUF76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76143P3, HUF76143S3S 2001opment. 76143S 76143P TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334 diode 98e

    76143P

    Abstract: 76143S TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334
    Text: 76143P3, HUF76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76143P3, HUF76143S3S 199ts 76143P 76143S TA7614 AN9321 AN9322 HUF76143P3 HUF76143S3S HUF76143S3ST TB334

    TA7614

    Abstract: Stealth
    Text: 76143P3, HUF76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 43P UF76 3S3 bt A, V, 055 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		PDF HUF76143P3, HUF76143S3S TA7614 Stealth

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76143P

    Abstract: 76143s TA7614 HUF76143S3S HUF76143S3ST AN9321 AN9322 HUF76143P3 TB334
    Text: 76143P3, HUF76143S3S Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76143P3, HUF76143S3S 76143P 76143s TA7614 HUF76143S3S HUF76143S3ST AN9321 AN9322 HUF76143P3 TB334

    76143S

    Abstract: 76143P Harris 76143p
    Text: 76143P3, HUF76143S3, HUF76143S3S Semiconductor November 1998 Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF76143P3, HUF76143S3, HUF76143S3S O-263AB HUF76143S3S O-263AB 76143S 76143P Harris 76143p

    TA7614

    Abstract: TA76143 50E3 IR 28E2 75E2 76143S
    Text: 76143P3, HUF76143S3S Semiconductor Data Sheet 75A, 30 V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76143P3, HUF76143S3S HUF76143 TA7614 TA76143 50E3 IR 28E2 75E2 76143S

    76143S

    Abstract: 76143P
    Text: interdi 76143P3, HUF76143S3S D ata S h e e t 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76143P3, HUF76143S3S HUF76143S3S 76143S 76143P

    76143P

    Abstract: 76143S Li ION spice model charge TA76143
    Text: 76143P3, HUF76143S3, HUF76143S3S Semiconductor November 1998 Data Sheet 75A, 30 V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF76143P3, HUF76143S3, HUF76143S3S O-263AB 330mm 100mm EIA-481 76143P 76143S Li ION spice model charge TA76143